5
th
Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
IDL02G65C5
ThinPAK 8x8
Bottom view
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
2)
Breakdown voltage tested at 4.5 mA
Optimized for high temperature operation
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Switch mode power supply
Power factor correction
Solar inverter
3,4
5
Benefits
Applications
Table 1
Key Performance Parameters
Parameter
Value
Unit
V
DC
650
V
Q
C
;
V
R
=400V
4
nC
E
C
;
V
R
=400V
0.8
µJ
I
F
@ T
C
< 155°C
2
A
Table 2
Pin 1
n.c.
Pin Definition
Pin 2
Pin 3
n.c.
A
Related Links
http://www.infineon.com/sic
ThinPAK Webpage
ThinPAK Application Note
Pin 4
A
Pin 5
C
Marking
D0265C5
Type / ordering Code
IDL02G65C5
Package
PG-VSON-4
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.0, 2013-12-05
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDL02G65C5
Table of contents
Table of Contents
1
2
3
4
5
6
7
8
Description .......................................................................................................................................... 2
Maximum ratings ................................................................................................................................ 4
Thermal characteristics ..................................................................................................................... 4
Electrical characteristics ................................................................................................................... 5
Electrical characteristics diagrams .................................................................................................. 6
Simplified Forward Characteristics Model ...................................................................................... 8
Package outlines ................................................................................................................................ 9
Revision History ............................................................................................................................... 10
Final Data Sheet
3
Rev. 2.0, 2013-12-05
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDL02G65C5
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Min.
I
F
–
–
–
–
–
–
–
–
–
-55
Values
Typ.
–
–
–
–
–
–
–
–
–
–
Max.
2
21
13
138
2.3
0.9
650
100
46
150
V
V/ns
W
°C
A²s
A
Unit
Note/Test Condition
T
C
< 135°C, D=1
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
T
C
= 25°C,
t
p
=10 µs
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
T
j
= 25°C
V
R
=0..480 V
T
C
= 25°C
Continuous forward current
Surge non-repetitive forward current,
I
F,SM
sine halfwave
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
I
F,max
∫ i²dt
V
RRM
dv/dt
P
tot
T
j
;T
stg
3
Table 4
Parameter
Thermal characteristics
Thermal characteristics
Symbol
Min.
R
thJC
R
thJA
–
–
Values
Typ.
2.1
–
2
Unit
Max.
2.7
45
K/W
Note/Test Condition
Thermal resistance, junction-case
Thermal resistance, junction-
ambient
SMD version, device on
1)
PCB, 6cm² cooling area
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm copper area (thickness 70μm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
4
Rev. 2.0, 2013-12-05
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
