from 30 MHz to 3 GHz. It features low insertion loss
and excellent linearity. This device is capable of
handling 100 Watts CW incident power at a base
plate temperature of 85ºC.
This high power switch is ideal for use on land
mobile radio and MIL-COM applications that require
higher CW and pulsed power operation.
The MASW-011055 is manufactured using
MACOM’s hybrid manufacturing process featuring
high voltage PIN diodes and passive devices
integrated in a 5 mm HQFN 12-lead plastic package.
N/C
2
8
N/C
RF1
3
7
RF2
4
5
6
B1
N/C
B2
Pin Configuration
Pin
1
2
3
4
Function
No Connection
No Connection
RF1 / V1 Bias
B1 Bias
No Connection
B2 Bias
Pin
7
8
9
10
11
12
Paddle
2
Function
RF2 / V2 Bias
No Connection
No Connection
No Connection
RFC / V3 Bias
No Connection
Ground
Ordering Information
Part Number
MASW-011055-TR0500
MASW-011055-SMB
1
5
6
Package
500 piece reel
Sample Board
2. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
1. Reference Application Note M513 for reel size information.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-011055
Switch, SP2T 100 Watt Reflective
0.03 - 3.0 GHz
Electrical Specifications: T
A
= 25°C, Bias
3
= +5 / -5 V, 50 mA / 100 mA
Parameter
Insertion Loss
P
IN
= 0 dBm
Isolation
P
IN
= 0 dBm
Input Return Loss
CW Input Power
CW Input Power
P0.1dB
Input IP3
Test Conditions
0.5 GHz
1 GHz
2 GHz
0.5 GHz
1 GHz
2 GHz
P
IN
= 0 dBm
25°C base plate, 2 GHz
85°C base plate, 2 GHz
25°C base plate, 2 GHz
F1 = 2000 MHz, F2 = 2010 MHz
P
IN
= 40 dBm/Tone, 28 V
(10-90% RF Voltage)
1 MHz Rep Rate in Modulating Mode
Units
dB
Min.
—
—
48
—
—
—
—
—
—
Typ.
0.10
0.20
0.35
52
54
51
>15
52
158
50
100
>52
66
Max.
—
0.50
—
—
—
—
—
—
—
Rev. V2
dB
dB
dBm
W
dBm
W
dBm
dBm
RF Switching Speed
3. See Bias table.
ns
—
500
—
Bias (+5 V / -5 V)
RF State
RFC – RF1 Low Loss
RFC – RF2 Isolation
RFC – RF2 Low Loss
RFC – RF1 Isolation
V1 Bias
(V)
-5 V @ 100 mA
V2 Bias
(V)
+5 V @ 50 mA
V3 Bias
(V)
0V
B1 Bias
(V)
0V
B2 Bias
(V)
0V
+5 V @ 50 mA
-5 V @ 100 mA
0V
0V
0V
4. DC reverse bias of a PIN Diode operating at a high power is dependent on RF frequency, incident power, and VSWR. See Minimum
Reverse DC Voltage table for high power operation.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-011055
Switch, SP2T 100 Watt Reflective
0.03 - 3.0 GHz
Minimum Reverse DC Voltage
5
Frequency
(MHz)
30
100
200
300
500
1000
1500
2000
Minimum Reverse
DC Voltage
| -120 V |
| -119 V |
| -114 V |
V1
V2
C6
L1
RF1
C2
L4
C5
Rev. V2
Application Schematic
RFC
C8
L5
C7
R3
V3
| -106 V |
| -90 V |
| -59 V |
| -43 V |
| -33 V |
C1
RF3
R1
B1
C3
L2
L3
C4
R2
B2
5. Required to maintain low loss under 100 W of incident power
with 1.5:1 VSWR.
Absolute Maximum Ratings
6,7
Parameter
Forward Current
Reverse DC Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Absolute Maximum
200 mA
-150 V
-40°C to +85°C
-55°C to +150°C
+175°C
Off-Chip Component Values
Operating Frequency
Component
0.03 - 1.0 GHz 0.5 - 3.0 GHz
C1, C3, C4,
C6, C7, C8
C2, C5, C8
L1 - L5
R1 - R2
8
R3
8
0.1 µF
0.1 µF
3.3 µH
82 Ω
39 Ω
270 pF
27 pF
82 nH
82 Ω
39 Ω
0603
0603
0603
1210
1210
Size
6. Exceeding any one or combination of these limits may cause
permanent damage to this device.
7. MACOM does not recommend sustained operation near these
survivability limits.
8. Resistance values are used for small signal testing under
+5 V / -5 V bias conditions.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-011055
Switch, SP2T 100 Watt Reflective
0.03 - 3.0 GHz
Lead Free 5
mm 12-Lead HQFN
†
Rev. V2
†
Reference Application Note S2083 for lead-free solder reflow recommendations.
by static electricity. Proper ESD control techniques
should be used when handling these Class 1B
HBM devices.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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