SGA1263Z
DCto4000MH
z Silicon Ger-
manium HBT
Cascadable
Gain Block
SGA1263Z
Package: SOT-363
DCto4000MHz SILICON GERMANIUM HBT
CASCADABLE GAIN BLOCK
Product Description
RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar
Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
response for application to 4GHz. This RFIC is a 2-stage design that pro-
vides high isolation of up to 40dB at 2GHz and is fabricated using the lat-
est SiGe HBT 50GHz F
T
process, featuring one-micron emitters with
V
CEO
>7V. These unconditionally stable amplifiers have less than 1dB gain
drift over 125°C operating range (-40°C to +85°C) and are ideal for use
as buffer amplifiers in oscillator applications covering
Optimum Technology
cellular, ISM, and narrowband PCS bands.
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Features
Isolation vs. Frequency
0
-2 0
ES
3500
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
dB
-4 0
-6 0
-8 0
100
500
900
D
1900
2400
EW
FO
Parameter
Small Signal Gain
R
Min.
Specification
Typ.
17
15
-9.5
1.0
N
Frequency MHz
Max.
19
17
Unit
6000
dB
850MHz
dB
1950MHz
Output Power at 1dB Compression
dBm
1950MHz
Output Third Order Intercept Point
dBm
1950MHz
Determined by Return Loss (<-10dB)
MHz
Input Return Loss
9.5
11.2
dB
1950MHz
Output Return Loss
7
8
dB
1950MHz
Noise Figure
2.5
4.0
dB
1950MHz
Device Voltage
2.5
2.8
3.1
V
Thermal Resistance
255
°C/W
Test Conditions: V
S
=5V, I
D
=8mA Typ., OIP3 Tone Spacing=1MHz, P
OUT
per tone=-20dBm, R
BIAS
=270, T
L
=25°C, Z
S
=Z
L
=50
N
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS20151109
O
T
15
12
-13.0
-1.5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
IG
N
Applications
Buffer Amplifier for Oscillator
Applications
Broadband Gain Blocks
IF Amp
S
DCto4000MHz Operation
Single Supply Voltage
Excellent Isolation, >50dB at
900MHz
50 In/Out, Broadband
Match for Operation from DC-
4GHz
Unconditionally Stable
Condition
1 of 6
SGA1263Z
Absolute Maximum Ratings
Parameter
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
Rating
20
5
-12
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Min.
DC
Max.
4000
Bandwidth
Frequency Range
Device Bias
Operating Voltage
Operating Current
500MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
850MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
1950MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2400MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2.8
8
16.0
2.7
4.0
-6.9
8.5
61.6
15.7
2.7
2.6
-7.8
8.9
48.4
14.7
3.0
2.8
-7.4
8.8
35.6
14.2
2.8
0.2
-7.0
8.4
33.6
EW
D
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
FO
R
N
N
O
T
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
ES
I
MHz
V
mA
T=25°C
T=25°C
T=25°C
T=25°C
T=25°C
G
T=25°C
Parameter
Specification
Typ.
Unit
N
S
Condition
DS20151109
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
SGA1263Z
Pin
1
2
3
4
5
6
Function
GND
GND
RF IN
VCC
GND
RF OUT
Description
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-
ble.
Same as Pin 1.
RF input pin. This pin requires the ise of an external DC blocking capacitor chosen for the frequency of operation.
Supply Connection. This pin should be bypassed with suitable capacitor(s).
Same as Pin 1.
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
Application Schematic for +5V Operation at 900MHz
1uF
G
270 Ω
68pF
68pF
N
270 Ω
V
CC
=+5V
50 Ω
microstrip
Note: A bias resistor is needed for
stability over temperature
50 Ω
microstrip
3
100pF
4
D
1,2,5
Application Schematic for +5V Operation at 1900MHz
N
EW
ES
I
6
100pF
1uF
4
3
6
1,2,5
22pF
S
V
CC
=+5V
50 Ω
microstrip
Recommended Bias Resistor Values
5V
275
7.5V
588
9V
775
12V
1150
Rbias
(Ohms)
100
50 Ω
microstrip
N
Supply
3.6V
Voltage(Vs)
DS20151109
O
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
T
FO
68pF
R
3 of 6
SGA1263Z
S21, Id =8 mA, T=+25C
24
S12, Id =8 mA, T=+25C
0
-2 0
18
dB
12
dB
-4 0
-6 0
-8 0
100
500
900
1900
2400
3500
1900
2400
3500
6000
6
Frequency MHz
Frequency MHz
S11, Id =8 mA, T=+25C
0
-1 0
-1 0
dB
-2 0
-3 0
-4 0
100
500
900
1900
2400
3500
6000
dB
-2 0
-3 0
-4 0
D
100
500
900
1900
ES
I
2400
3500
G
Frequency MHz
S22, Id=8 mA, Ta= +25C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
0
N
S22, Id =8 mA, T=+25C
S
6000
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
N
O
T
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FO
R
N
S11, Id=8 mA, Ta= +25C
EW
Frequency MHz
6000
0
100
500
900
DS20151109
SGA1263Z
Package Dimensions
Pad Layout
FO
R
N
RF
IN
N
DS20151109
O
T
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EW
D
RF
OUT
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
ES
I
Dimensions in inches [millimeters]
G
N
5 of 6
S
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