Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
R
DS(on)
(Ω)
0.022 at V
GS
= 10 V
0.030 at V
GS
= 4.5 V
0.022 at V
GS
= 10 V
0.028 at V
GS
= 4.5 V
I
D
(A)
10
8
10
8
FEATURES
•
Halogen-free Option Available
•
LITTLE FOOT
®
Plus Schottky
• PWM Optimized
• New Low Thermal Resistance PowerPAK
®
Package with low 1.07 mm Profile
RoHS
COMPLIANT
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.50 V at 1.0 A
I
F
(A)
3.0
APPLICATIONS
• Asymmetrical Buck-Boost DC/DC Converter
PowerPAK
®
SO-8
6.15 mm
S1
1
2
5.15 mm
G1
S2
D
1
G2
D
2
3
4
D1
8
7
D1
D2
G
1
D2
Schottky Diode
G
2
6
5
Bottom View
Ordering Information:
Si7872DP-T1-E3 (Lead (Pb)-free)
Si7872DP-T1-GE3 (Lead (Pb)-free and Halogen-f
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
T
A
= 25 °C
Maximum Power Dissipation
a
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b,c
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 s
Channel-1 Channel-2
30
± 20
10
7
30
2.9
3.5
2.2
- 55 to 150
260
1.1
1.4
0.9
± 12
± 20
6.4
5.1
± 12
Steady State
Channel-1 Channel-2
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
MOSFET
Typical
Maximum
26
35
60
85
4.1
6.0
Schottky
Typical
Maximum
26
35
60
85
4.1
6.0
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
www.vishay.com
1
Si7872DP
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Test Conditions
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
1.0
0.8
Typ.
b
Max.
3.0
2.0
± 100
± 100
1
100
15
2000
Unit
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
µA
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.5 A
20
20
0.017
0.016
0.024
0.020
19
21
0.75
0.47
7
11.5
2.9
3.8
2.5
3.5
1.5
1.8
9
12
10
10
19
40
9
9
35
28
0.022
0.022
0.030
0.028
A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 4.5 V, I
D
= 6.5 A
Ω
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
g
fs
V
SD
V
DS
= 15 V, I
D
= 7.5 A
I
S
= 1 A, V
GS
= 0 V
S
1.2
0.5
11
18
nC
V
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
G
= 6
Ω
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 7.5 A
Ω
15
20
17
17
30
66
15
15
55
45
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
I
rm
C
T
Test Conditions
I
F
= 1.0 A
I
F
= 1.0 A, T
J
= 125 °C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 °C
V
r
= – 30 V, T
J
= 125 °C
V
r
= 10 V
Min.
Typ.
0.47
0.36
0.004
0.7
3.0
50
Max.
0.50
0.42
0.100
10
20
Unit
V
Maximum Reverse Leakage Current
Junction Capacitance
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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