VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
FEATURES
•
•
•
•
150 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
Anode
TO-220AB
Anode
2
1 Common 3
cathode
•
•
•
•
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 15 A
45 V
See Electrical table
100 mA at 125 °C
150 °C
Common cathode
10 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FRM
I
FSM
V
F
T
J
T
C
= 123 °C (per leg)
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
VALUES
30
35/45
30
1020
0.6
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBR3045CTPbF
45
VS-MBR3045CT-N3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 123 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 123 °C
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated load
condition and with rated
V
RRM
applied
VALUES
15
30
30
A
1020
200
10
2
mJ
A
UNITS
Peak repetitive forward current per leg
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 26-Aug-11
Document Number: 94292
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
30 A
Maximum forward voltage drop
V
FM (1)
20 A
30 A
Maximum instantaneous reverse current
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
VALUES
0.76
0.6
0.72
1
100
0.29
13.6
800
8.0
10 000
mA
V
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
Approximate weight
minimum
maximum
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
R
thJA
DC operation
Mounting surface, smooth and greased
Only for TO-220
DC operation
For D
2
PAK and TO-262
TEST CONDITIONS
VALUES
- 65 to 150
- 65 to 175
1.5
0.50
50
2
0.07
Non-lubricated threads
Case style TO-220AB
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
MBR3045CT
Revision: 26-Aug-11
Document Number: 94292
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
100
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
0.1
0.01
T
J
= 25 °C
0.001
T
J
= 50 °C
1
0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
100
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 26-Aug-11
Document Number: 94292
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com
Vishay Semiconductors
15
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
6
DC
3
150
Allowable Case Temperature (°C)
Average Power Loss (W)
140
DC
12
130
9
120
Square
wave
(D = 0.50)
Rated
V
R
applied
110
See note (1)
100
0
5
10
15
20
25
0
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 26-Aug-11
Document Number: 94292
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
2
-
-
-
-
-
30
3
45
4
CT
5
PbF
6
1
2
3
4
5
6
Vishay Semiconductors product
Schottky MBR series
Current rating (30 = 30 A)
Voltage ratings (045 = 45 V)
CT = Essential part number
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR3045CTPbF
VS-MBR3045CT-N3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220AB PbF
TO-220AB -N3
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
Revision: 26-Aug-11
Document Number: 94292
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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