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MMFT960T1G

产品描述MOSFET 60V 300mA N-Channel
产品类别分立半导体    晶体管   
文件大小56KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MMFT960T1G概述

MOSFET 60V 300mA N-Channel

MMFT960T1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TO-261AA
包装说明CASE 318E-04, 4 PIN
针数4
制造商包装代码0.0318
Reach Compliance Codenot_compliant
ECCN代码EAR99
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压60 V
最大漏极电流 (Abs) (ID)0.3 A
最大漏极电流 (ID)0.3 A
最大漏源导通电阻1.7 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-261AA
JESD-30 代码R-PDSO-G4
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量4
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)0.8 W
认证状态Not Qualified
表面贴装YES
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

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MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N−Channel SOT−223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc−dc converters,
solenoid and relay drivers. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
Features
http://onsemi.com
300 mA, 60 VOLTS
R
DS(on)
= 1.7
W
N−Channel
D
Silicon Gate for Fast Switching Speeds
Low Drive Requirement
The SOT−223 Package can be Soldered Using Wave or Reflow
The Formed Leads Absorb Thermal Stress During Soldering
Eliminating the Possibility of Damage to the Die
Pb−Free Package is Available
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Non−Repetitive
Drain Current
Total Power Dissipation @ T
A
= 25°C
(Note 1)
Derate above 25°C
Operating and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
P
D
Value
60
±
30
300
0.8
6.4
T
J
, T
stg
−65 to 150
Unit
V
V
mAdc
W
mW/°C
°C
1
2
G
S
4
TO−261AA
CASE 318E
STYLE 3
3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
AYW
FT960
G
G
1
Gate
2
Drain
3
Source
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
R
qJA
T
L
156
260
10
°C/W
°C
S
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
FT960 = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMFT960T1
MMFT960T1G
Package
SOT−223
SOT−223
(Pb−Free)
Shipping
1000 Tape & Reel
1000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 5
Publication Order Number:
MMFT960T1/D

 
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