PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Rev. 2 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
V
GS
= 4.5 V; I
D
= 10 A; V
DS
= 15 V;
see
Figure 14;
see
Figure 15
V
GS
= 4.5 V; I
D
= 10 A; V
DS
= 15 V;
see
Figure 14;
see
Figure 15
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 32 A;
V
sup
≤
30 V; R
GS
= 50
Ω;
unclamped
-
-
1.94
5.1
-
-
nC
nC
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
-
Typ
-
-
-
-
18.7
13.4
Max
30
32
45
175
23.4
17
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
-
-
13
mJ
[1]
Continuous current is limited by package.
Nexperia
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN017-30PL
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 32 A;
V
sup
≤
30 V; R
GS
= 50
Ω;
unclamped
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
30
30
20
26.9
32
152
45
175
175
32
152
13
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
Continuous current is limited by package.
All information provided in this document is subject to legal disclaimers.
©
PSMN017-30PL
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
2 of 14
Nexperia
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
40
I
D
(A)
30
(1)
003aaj411
120
P
der
(%)
80
03aa16
20
40
10
0
0
50
100
150
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
(1) Capped at 32A due to package
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aaj413
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
µ
s
10
100
µ
s
1 ms
1
DC
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN017-30PL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
3 of 14
Nexperia
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see
Figure 4
vertical in free air
Min
-
-
Typ
3.24
60
Max
3.31
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
0.1
0.05
10
-1
0.02
P
003aaj414
δ
=
t
p
T
single shot
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
T
t
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN017-30PL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
4 of 14
Nexperia
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
Conditions
Min
30
27
1.3
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
D
= 10 A; V
DS
= 15 V; see
Figure 14;
see
Figure 15
V
DS
= 15 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16
-
-
-
-
Typ
-
-
1.7
-
-
0.3
-
10
10
-
18.7
24
-
13.4
2.03
10.7
9.55
5.1
1.52
1
0.5
1.94
2.86
552
127
64
Max
-
-
2.15
-
2.45
1
50
100
100
43.2
23.4
31.5
23.5
17
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
Static characteristics
drain-source breakdown voltage I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 125 °C
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -16 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 175 °C;
see
Figure 12
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
see
Figure 12
V
GS
= 10 V; I
D
= 10 A; T
j
= 100 °C;
see
Figure 12
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 13
R
G
Q
G(tot)
gate resistance
total gate charge
f = 1 MHz
I
D
= 10 A; V
DS
= 15 V; V
GS
= 10 V;
see
Figure 14;
see
Figure 15
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V;
see
Figure 14;
see
Figure 15
I
D
= 10 A; V
DS
= 15 V; V
GS
= 4.5 V;
see
Figure 14;
see
Figure 15
Q
GS
Q
GS(th)
Q
GS(th-pl)
Q
GD
V
GS(pl)
C
iss
C
oss
C
rss
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
I
D
= 10 A; V
DS
= 15 V; V
GS
= 4.5 V;
see
Figure 14;
see
Figure 15
Dynamic characteristics
PSMN017-30PL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
5 of 14
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