VS-63CTQ100PbF, VS-63CTQ100-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
Base
common
cathode
2
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-220AB
Anode
Anode
2
1 Common 3
cathode
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 30 A
100 V
0.69 V
20 mA at 125 °C
175 °C
Common cathode
11.25 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FRM
I
FSM
V
F
T
J
T
C
= 139 °C (per leg)
t
p
= 5 μs sine
30 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
VALUES
60
100
60
1500
0.69
- 65 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-63CTQ100PbF
100
VS-63CTQ100-N3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 139 °C, rectangular waveform
Rated V
R
, square wave, 20 kHz, T
C
= 140 °C
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
60
60
1500
300
11.25
0.75
mJ
A
A
UNITS
Peak repetitive forward current per leg
Maximum peak one cycle non-repetitive
surge current per leg
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 0.75 A, L = 40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 29-Aug-11
Document Number: 94245
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-63CTQ100PbF, VS-63CTQ100-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
30 A
Maximum forward voltage drop
V
FM (1)
60 A
30 A
60 A
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
TYP.
0.78
0.94
0.64
0.78
0.02
11
1100
8.0
10 000
MAX.
0.82
1.0
0.69
0.83
0.3
20
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 65 to 175
1.2
°C/W
0.50
2
0.07
Non-lubricated threads
Case style TO-220AB
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
63CTQ100
Revision: 29-Aug-11
Document Number: 94245
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-63CTQ100PbF, VS-63CTQ100-N3
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (mA)
100
10
1
0.1
0.01
0.001
0.0001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
0.001
0.00001
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 29-Aug-11
Document Number: 94245
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-63CTQ100PbF, VS-63CTQ100-N3
www.vishay.com
Vishay Semiconductors
30
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
180
Allowable Case Temperature (°C)
170
160
150
140
130
120
110
100
90
0
5
10
15
20
25
30
35
40
45
See note (1)
0
0
Square
wave
(D = 0.50)
80
% rated
V
R
applied
DC
Average Power Loss (W)
25
20
15
10
DC
5
5
10
15
20
25
30
35
40
45
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
1000
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 29-Aug-11
Document Number: 94245
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-63CTQ100PbF, VS-63CTQ100-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
63
2
C
3
T
4
Q
5
100 PbF
6
7
Vishay Semiconductors product
Current rating (60 A)
Circuit configuration
C = Common cathode
-
Package
T = TO-220
-
-
Schottky “Q” series
Voltage rating (100 = 100 V)
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-63CTQ100PbF
VS-63CTQ100-N3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220AB PbF
TO-220AB -N3
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
Revision: 29-Aug-11
Document Number: 94245
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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