BUK9832-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 1 June 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
150 °C
V
GS
= 5 V; T
sp
= 25 °C;
see
Figure 1;
see
Figure 3
T
sp
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
12
8
V
A
W
Static characteristics
R
DSon
V
GS
= 4.5 V; I
D
= 8 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 8 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 8 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 10 A; V
sup
≤
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 5 V;
avalanche energy T
j(init)
= 25 °C; unclamped
-
-
100
mJ
-
-
-
-
25
27
36
29
32
mΩ
mΩ
mΩ
NXP Semiconductors
BUK9832-55A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
drain
1
2
3
mbb076
Simplified outline
4
Graphic symbol
D
G
S
SOT223 (SC-73)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9832-55A
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
BUK9832-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2010
2 of 13
NXP Semiconductors
BUK9832-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
sp
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3
T
sp
= 100 °C; V
GS
= 5 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
V
GSM
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source
avalanche energy
pulsed; t
p
≤
50 µs
T
sp
= 25 °C; t
p
≤
10 µs; pulsed;
see
Figure 3
T
sp
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
150 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
Typ
-
-
-
-
-
-
-
-
-
-
Max
55
55
10
12
7
47
8
150
150
15
Unit
V
V
V
A
A
A
W
°C
°C
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
I
S
I
SM
E
DS(AL)S
T
sp
= 25 °C
t
p
≤
10 µs; pulsed; T
sp
= 25 °C
I
D
= 10 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
-
-
-
-
-
-
12
47
100
A
A
mJ
Avalanche ruggedness
120
I
der
(%)
80
03aa25
120
P
der
(%)
80
03aa17
40
40
0
0
50
100
150
T
sp
(°C)
200
0
0
50
100
150
T
sp
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of solder point temperature
Fig 2.
Normalized total power dissipation as a
function of solder point temperature
BUK9832-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2010
3 of 13
NXP Semiconductors
BUK9832-55A
N-channel TrenchMOS logic level FET
10
3
I
D
(A)
10
2
R
DSon
= V
DS
/I
D
03nc44
t
p
= 10
μs
100
μs
1 ms
10
1
P
δ
=
t
p
T
D.C.
10 ms
100 ms
10
−1
t
p
t
T
10
−2
10
−1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
see
Figure 4
Conditions
Min
-
Typ
-
Max
15
Unit
K/W
R
th(j-a)
-
70
-
K/W
10
2
Z
th(j-sp)
(K/W)
10
δ
= 0.5
0.2
0.1
1
0.05
0.02
10
−1
Single Shot
10
−2
10
−6
t
p
T
P
03nc45
δ
=
t
p
T
t
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
1
2
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration
BUK9832-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2010
4 of 13
NXP Semiconductors
BUK9832-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 150 °C;
see
Figure 11
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 55 V; V
GS
= 0 V; T
j
= 150 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 8 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 8 A; T
j
= 150 °C;
see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 8 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 8 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
I
S
= 18 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
-
-
-
-
-
-
-
-
-
-
1195
212
144
14
125
64
68
0.85
51
80
1594
254
198
-
-
-
-
1.2
-
-
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
Min
50
55
1
-
0.6
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.05
2
2
-
-
25
27
Max
-
-
2
2.3
-
500
10
100
100
36
59
29
32
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
BUK9832-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2010
5 of 13
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