time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the
product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 10/20/2017
3
IS31LT3170/71
ABSOLUTE MAXIMUM RATINGS (Note 1)
Maximum enable voltage, V
EN(MAX)
only for IS31LT3170-STLS4-TR
V
EN(MAX)
only for IS31LT3171-STLS4-TR
Maximum output current, I
OUT(MAX)
Maximum output voltage, V
OUT(MAX)
Reverse voltage between all terminals, V
R
Package thermal resistance, junction to ambient (4 layer standard test
PCB based on JEDEC standard),
θ
JA
Power dissipation, P
D(MAX)
(Note 2)
Maximum junction temperature, T
JMAX
Storage temperature range, T
STG
Operating temperature range, T
A
=T
J
ESD (HBM)
ESD (CDM)
45V
6V
200mA
45V
0.5V
130°C/W
0.77W
+150°C
-65°C ~ +150°C
-40°C ~ +125°C
±2kV
±500V
Note 1:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 2:
Detail information please refer to package thermal de-rating curve on Page 14.
ELECTRICAL CHARACTERISTICS
“●” This symbol in the table means these parameters are for IS31LT3170-STLS4-TR.
“○” This symbol in the table means these parameters are for IS31LT3171-STLS4-TR.
Test condition is T
A
= T
J
= 25°C, unless otherwise specified. (Note 3)
Symbol
V
BD_OUT
I
EN
R
INT
Parameter
OUT pin breakdown voltage
Enable current
Internal resistor
V
EN
= 0V
V
EN
= 24V
V
EN
= 3.3V
I
RINT
= 10mA
V
OUT
= 1.4V, V
EN
= 24V,
R
EXT
OPEN
Output current
I
OUT
V
OUT
= 1.4V, V
EN
= 3.3V,
R
EXT
OPEN
V
OUT
> 2.0V, V
EN
= 24V,
R
EXT
= 10Ω
V
OUT
> 2.0V, V
EN
= 3.3V,
R
EXT
= 10Ω
Output current Range
(Note 4, 5)
V
OUT
> 2.0V, V
EN
= 24V
V
OUT
> 2.0V, V
EN
= 3.3V
●
○
●
○
●
○
9
9
100
100
10
10
●
○
Condition
Min.
42
0.35
0.35
106
10
10
113
113
11
mA
11
120
mA
120
150
mA
150
Typ.
Max.
Unit
V
mA
Ω
Integrated Silicon Solution, Inc. – www.issi.com
Rev. C, 10/20/2017
4
IS31LT3170/71
DC CHARACTERISTICS WITH STABILIZED LED LOAD
“●” This symbol in the table means these parameters are for IS31LT3170-STLS4-TR.
“○” This symbol in the table means these parameters are for IS31LT3171-STLS4-TR.
Test condition is T
A
= T
J
= 25°C, unless otherwise specified. (Note 3)
Symbol
V
S
V
HR
Parameter
Sufficient supply voltage on EN
pin
Lowest sufficient headroom
voltage on OUT pin
Output current change versus
ambient temp change
∆I
OUT
/I
OUT
(Note 4)
Output current change versus
Vout
I
OUT
= 100mA
V
OUT
> 2.0V, V
EN
= 24V,
R
EXT
= 10Ω
V
OUT
> 2.0V, V
EN
= 3.3V,
R
EXT
= 10Ω
V
OUT
> 2.0V, V
EN
= 24V,
R
EXT
= 10Ω
V
OUT
> 2.0V, V
EN
= 3.3V,
R
EXT
= 10Ω
●
○
●
○
Condition
●
○
Min.
5
2.5
1
-0.26
%/K
-0.26
1.9
%/V
1.9
Typ.
Max.
42
5.5
1.2
Unit
V
V
Note 3:
Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over -40°C to
+125°C temperature range, are guaranteed by design and characterization.
Note 4:
Guaranteed by design.
Note 5:
The maximum output current is dependent on the PCB board design, air flow, ambient temperature and power dissipation in the
device. Please refer to the package thermal de-rating curve on Page 14 for more detail information.
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