TGF2080
800um Discrete GaAs pHEMT
Applications
Defense & Aerospace
High-Reliability
Test and Measurement
Commercial
Broadband Wireless
Product Features
Frequency Range: DC - 20 GHz
29.5 dBm Typical Output Power - P1dB
11.5 dB Typical Gain @ 12 GHz
56% Typical PAE @ 12 GHz
No Vias
Technology: 0.25 um GaAs pHEMT
Chip Dimensions: 0.41 x 0.54 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2080 is a discrete 800-Micron pHEMT
which operates from DC to 20 GHz. The TGF2080 is
designed using TriQuint’s proven standard 0.25um
power pHEMT production process. This process
features advanced techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2080 typically provides 29.5 dBm of output
power at P1dB with gain of 11.5 dB and 56% power-
added efficiency at 1 dB compression.
This
performance makes the TGF2080 appropriate for high
efficiency applications. The protective overcoat layer
with silicon nitride provides a level of environmental
robustness and scratch protection.
Lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um)
D (71um X 71um)
S (121um X 71um)
S (121um X 96um)
Terminals
Gate
Drain
Source (outermost)
Source (center)
Ordering Information
Part
TGF2080
ECCN
EAR99
Description
800um GaAs pHEMT
Datasheet: Rev B 06-26-13
© 2013 TriQuint
- 1 of 6-
Disclaimer: Subject to change without notice
www.triquint.com
TGF2080
800um Discrete GaAs pHEMT
Absolute Maximum Ratings
Symbol
Vds
Vgs
Id
Ig,f
Tch
Tstg
Pin
Ptot
Parameter
Drain-Source Voltage
Gate- Source Voltage
Drain Current
(2)
Forward Gate Current
Channel Temperature
(3)
Storage Temperature
Input Continuous Wave Power
(2)
Total Power Dissipation
(2)
Absolute
12
-7
Idss
40
175
(4)
-65 to 150
26
4.2
Continuous
8
-3
Idss
7
150
(5)
-65 to 150
@ 3 dB Compression
2.8
Units
V
V
mA
mA
°C
°C
dBm
W
Notes:
1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only,
and functional operation of the device at these conditions is not implied.
2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power
dissipation listed in the table.
3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that
junction temperatures be maintained at the lowest possible levels.
4. When operated at this channel temperature, the median life is 1.0E+5 hours.
5. When operated at this channel temperature, the median life is 1.0E+6 hours.
Electrical Characteristics
Test conditions unless otherwise noted: Temperature = 25 °C.
Symbol Parameter
P1dB
G1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
†
Conditions
Freq = 12 GHz, Vds = 8 V, Ids = 50%
Idss
Freq = 12 GHz, Vds = 8 V, Ids = 50%
Idss
Min
Typ Max Units
29.5
11.5
56
259
(1)
309
-1.0
-15
-15
33
†
358
-0.5
-12
dBm
dB
%
mA
mS
V
V
V
°C/W
Output Power at 1dB Compression
Gain at P1dB
PAE at P1dB
Saturated Drain Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Gate-Source Breakdown Voltage
Thermal Resistance
Based on IR Scan
Freq = 12 GHz, Vds = 8 V, Ids = 50%
Idss
Vds = 2 V, Vgs = 0 V
160
Vds = 2 V, Ids = 50% Idss
Vds = 2 V, Ids = 0.80 mA
-1.5
Ig = 0.80 mA, source open
Ig = 0.80 mA, drain open
AuSn eutectic attach
Notes:
1. Typical Standard Deviation of 6.4mA (1
σ).
Datasheet: Rev B 06-26-13
© 2013 TriQuint
- 2 of 6-
Disclaimer: Subject to change without notice
www.triquint.com
TGF2080
800um Discrete GaAs pHEMT
S-Parameters
Test Conditions: V
DS
=+8 V (typ.), I
DS
=50% I
DSS,
Temp=+25
°
C, 50Ω system
Freq (GHz) S11 (mag)
S11 (ang)
S21 (mag)
S21 (ang)
S12 (mag)
S12 (ang)
S22 (mag)
S22 (ang)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.94
0.90
0.89
0.89
0.90
0.90
0.91
0.92
0.93
0.94
0.94
0.95
0.95
0.96
0.97
0.98
0.99
0.99
‐78.8
‐125.6
‐152.5
‐170.9
175.0
163.5
153.5
144.6
136.4
128.9
122.3
116.3
110.7
105.2
100.5
95.7
91.4
87.0
15.22
10.45
7.59
5.86
4.72
3.91
3.32
2.86
2.49
2.17
1.92
1.70
1.52
1.37
1.23
1.12
1.01
0.91
133.6
106.1
88.3
74.6
62.9
52.4
42.5
33.0
23.9
14.9
6.7
‐1.4
‐9.3
‐17.1
‐24.4
‐31.8
‐39.0
‐46.4
0.033
0.045
0.049
0.050
0.049
0.049
0.048
0.046
0.045
0.041
0.039
0.036
0.034
0.030
0.027
0.026
0.026
0.024
46.8
23.1
8.7
‐1.5
‐9.6
‐16.5
‐23.0
‐29.2
‐36.1
‐42.0
‐45.4
‐49.6
‐53.2
‐56.5
‐54.4
‐54.7
‐55.5
‐58.2
0.35
0.28
0.25
0.24
0.25
0.26
0.28
0.30
0.33
0.36
0.38
0.42
0.45
0.49
0.52
0.56
0.59
0.62
‐59.9
‐98.9
‐124.7
‐142.8
‐156.1
‐167.1
‐176.0
176.3
169.1
162.8
157.7
152.6
147.8
142.4
138.3
133.8
129.7
125.0
Includes 1 bond wire on each Gate, 1 bond wire on each Drain, and 3 bond wires on each Source pad.
Datasheet: Rev B 06-26-13
© 2013 TriQuint
- 3 of 6-
Disclaimer: Subject to change without notice
www.triquint.com
TGF2080
800um Discrete GaAs pHEMT
RF Tuned Data at 12 GHz
Bias conditions: V
DS
= 8 V, I
DQ
= 50% Idss, F = 12 GHz
30
25
20
15
10
Gain / Pout / PAE vs. Pin
60%
50%
40%
30
25
20
Gain / PAE vs. Pout
60%
50%
40%
30%
20%
GAIN
Gain (dB)/ Pout (dBm)
Gain (dB)
30%
20%
GAIN
Pout
PAE
15
10
5
PAE
5
0
-10
-5
0
5
10
10%
0%
10%
0%
5
10
15
20
25
30
0
15
20
Pin (dBm)
Pout (dBm)
Datasheet: Rev B 06-26-13
© 2013 TriQuint
- 4 of 6-
Disclaimer: Subject to change without notice
www.triquint.com
PAE (%)
PAE (%)
TGF2080
800um Discrete GaAs pHEMT
Assembly Notes
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment (i.e. epoxy) can be used in low‐power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
Recommend Eutectic die attach with AuSn (80/20) solder and limit exposure to temperatures above 300C to 30
seconds, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long‐term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
Either Thermo‐compression Wedge Bonding or Thermosonic Ball Bonding can be used to bond onto the die.
Force, time, and ultrasonics are critical bonding parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0008‐inch wire.
Product Compliance Information
ESD Sensitivity
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
Caution – ESD Sensitive Device
Proper
ESD procedures should be followed when
handling this device.
Not HAST Compliant.
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C
15
H
12
Br
4
0
2
) Free
PFOS Free
SVHC Free
Datasheet: Rev B 06-26-13
© 2013 TriQuint
- 5 of 6-
Disclaimer: Subject to change without notice
www.triquint.com
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