• Load Switch with Level Shift for Portable Devices
- N-Channel for Level Shift Drive
- P-Channel for Main Switch
S
2
D
2
Q
2
P-Channel
- 12
5 nC
PowerPAK
®
SC-70-6 Dual
1
S
1
2
G
1
D
1/G
2
D
1
/G
2
D
1
/G
2
D
2
NC
3
D
2
Marking Code
EFX
Part # code
G
1
R
Q
1
6
5
2.05 mm
4
S
2
2.05 mm
XXX
Lot Traceability
and Date code
S
1
Ordering Information:
SiA777EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
N-Channel
20
±6
1.5
a
1.5
a
1.5
a, b, c
1.5
a, b, c
4
1.5
a
1.6
b, c
5
3.2
1.9
b, c
1.2
b, c
- 55 to 150
260
P-Channel
- 12
±8
- 4.5
a
- 4.5
a
- 4.5
a, b, c
- 3.9
b, c
- 15
- 4.5
a
- 1.6
b, c
7.8
5
1.9
b, c
1.2
b, c
A
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Source Drain Current Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t
≤
5s
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W.
Document Number: 65371
S09-2032-Rev. A, 05-Oct-09
www.vishay.com
1
Symbol
R
thJA
R
thJC
N-Channel
Typ.
Max.
52
65
20
25
P-Channel
Typ.
Max.
52
65
12.5
16
Unit
New Product
SiA777EDJ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 3 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 6 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 1.6 A
V
GS
= - 4.5 V, I
D
= - 3.8 A
V
GS
= 2.5 V, I
D
= 1.5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 3.3 A
V
GS
= 1.8 V, I
D
= 1.3 A
V
GS
= - 1.8 V, I
D
= 2.6 A
V
GS
= 1.5 V, I
D
= 0.3 A
V
GS
= - 1.5 V, I
D
= 1 A
Forward Transconductance
b
Dynamic
a
V
DS
= 10 V, V
GS
= 5 V, I
D
= 1.7 A
Total Gate Charge
Q
g
V
DS
= - 6 V, V
GS
= - 8 V, I
D
= - 4.9 A
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.7 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 4.9 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
f = 1 MHz
N-Ch
P-Ch
40
2
1.3
7.5
1.1
5
0.2
0.6
0.1
1.8
200
10
400
20
Ω
2.2
12
1.7
8
nC
g
fs
V
DS
= 10 V, I
D
= 1.6 A
V
DS
= - 10 V, I
D
= - 3.8 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4
- 10
0.183
0.047
0.220
0.063
0.275
0.095
0.320
0.125
3.5
11
0.225
0.057
0.270
0.077
0.345
0.115
0.960
0.200
S
Ω
0.4
- 0.4
20
- 12
21
-3
- 2.3
2.3
1.0
-1
±1
± 0.5
±1
±3
1
-1
10
- 10
A
µA
V
µA
mA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 65371
S09-2032-Rev. A, 05-Oct-09
New Product
SiA777EDJ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 7.7
Ω
I
D
≅
1.3 A, V
GEN
= 4.5 V, R
g
= 1
Ω
P-Channel
V
DD
= - 6 V, R
L
= 1.5
Ω
I
D
≅
- 3.9 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
S
= 1.3 A, V
GS
= 0 V
I
S
= - 3.9 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
I
F
= 1.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 3.9 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.
20
20
12
20
70
32
20
16
Max.
30
30
20
30
105
50
30
25
1.5
- 4.5
4
- 15
Unit
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.9
- 0.8
50
45
30
25
15
15
35
30
1.2
- 1.2
75
70
45
40
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
