TELEFUNKEN Semiconductors
U2891B
2.5 GHz Quadrature Up-Converter
Description
The U2891B is a silicon monolithic IC made with TELE-
FUNKEN’s advanced UHF process. The IC consists of a
500 MHz I/Q quadrature modulator and a 2.5 GHz mixer.
Both parts can be connected via an external filter in order
to suppress harmonics and spurious products. The device
features 3 V operation, a low current consumption and
furthermore two separate power-down functions for mod-
ulator and mixer. The RF ports are single ended and the
device can be operated adjustment free, but for optimiza-
tion also two pins for phase adjustment are provided.
These features and the double conversion concept of
U2891B make this device perfectly suited for all digital
radio applications from 900 MHz up to 2.5 GHz (e.g.,
GSM, DCS 1800, JDC, PHP and WLAN).
Features
D
Low power consumption: 25 mA / 3 V
(typical at –8 dBm output level)
D
2.5 GHz output frequency
D
Excellent sideband suppression by means of duty
cycle regeneration and 90° phase control
D
Separate power-down mode for modulator and mixer
D
Low LO input level: – 10 dBm (typical)
D
LO and RF port 50-W single-ended
Benefits
D
Extended talk time due to increased battery life
D
Few external components results in cost and board
space saving
D
Adjustment free, hence saves time and cost
D
One TX Platform for different systems
D
Reduced costs and space for battery (3-V operation)
Case:
SSO-24 package
Ordering Information:
U2891B-AFS, U2891B-AFSG3 (see page 5)
Block Diagram
Ad
ro
nic
C
om
po
ne
GND
24
GND
1
6
BB
Ai
BB
Ai
2
3
LO 1
4
nt
sG
mb
H
S
IF
PD
IF
PD
RF
V
S
14
13
Voltage
regulator
8, 21, 20
18
LP 2
IF
O
7
11
IF
i
12
IF
i
9
LO2
15
S
RF
50
Lo - Reg.
f/2f
0°
50
LO 1
5
90°
ö
Control
RF
O
16
BB
Bi
BB
Bi
22
23
10,17
19
LP 1
94 8141 e
GND
Rev. A2: 04.10.1995
Advanced Information
1 (6)
U2891B
Pin Description
GND
BB
Ai
BB
Ai
LO 1
LO 1
S
IF
IF
O
V
S
LO 2
GND
IF
i
IF
i
1
2
3
4
5
6
7
8
9
10
11
12
94 8581 e
TELEFUNKEN Semiconductors
24 GND
23 BB
Bi
22 BB
Bi
21 V
S
20 V
S
19 LP 1
18 LP 2
17 GND
16 RF
O
15 S
RF
14 PD
IF
13 PD
RF
Absolute Maximum Ratings
Parameters
Supply voltage
Pins 8, 20 and 21
Input voltage
Pins 2, 3, 4, 5, 9, 11, 12, 22 and 23
Junction temperature
Storage temperature range
Ad
ro
nic
C
om
po
ne
19
20
21
22
23
24
LP 1
V
S
V
S
BB
Bi
BB
Bi
GND
Symbol
V
S
, V
SRF
V
i
T
j
T
stg
Symbol
V
S
, V
SRF
T
amb
Symbol
R
thja
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Operating Range
Parameters
Supply voltage
Pins 8, 20 and 21
Ambient temperature range
Thermal Resistance
Junction ambient
Parameters
SSO-24
2 (6)
Advanced Information
nt
sG
mb
H
Symbol
GND
BB
Ai
BB
Ai
LO 1
LO 1
S
IF
IF
O
V
S
LO 2
GND
IF
i
IF
i
PD
RF
PD
IF
S
RF
RF
O
GND
LP 2
Function
Ground
Baseband input B inverse
Baseband input B
LO 1 input
LO 1 input inverse
Output symmetry IF
IF output
Supply voltage
LO 2 input
Ground
IF input
IF input inverse
Power-down RF
Power-down IF
Output symmetry RF
RF output
Ground
Filter and IF level
adjustment
Filter and IF level
adjustment
Supply voltage
Supply voltage
Baseband input B
Baseband input B inverse
Ground
Value
6
0 to V
S
125
– 40 to + 125
Unit
V
V
°C
°C
Value
2.7 to 5.5
– 40 to + 85
Unit
V
°C
Value
140
Unit
K/W
Rev. A2: 04.10.1995
TELEFUNKEN Semiconductors
U2891B
Symbol
Electrical Characteristics: General Data
Parameters
Power supply
Supply voltage range
Supply current
Test Conditions / Pin
Pin 8, 20 and 21
Pin 8, 20 and 21, V
S
= 3 V
nt
sG
mb
H
Min.
2.7
Typ.
Max.
5.5
25
Min.
Typ.
–8
40
1.4
45
Max.
2
500
150
200
30
– 10
tbd.
0.4
<5
10
500
–2
0.6
900
I
PD
t
S
V
S
– 0.5
V
S
0.15
<1
V
S
+0.5
V
S
+0.5
1
Unit
V
mA
V
S,
V
SRF
I
S
, I
SRF
Electrical Characteristics: I/Q Modulator
Test conditions (unless otherwise specified): V
S
= 3 V, T
amb
= 25°C, referred to test circuit.
System impedance Zo = 50
W,
f
LO1
= 100 MHz, P
LO1
= –10 dBm.
Parameters
Test Conditions / Pin
IF output
Pin 7
Output level
R
LP
=
R
LO1 suppression
Voltage standing wave ratio
Sideband suppression
Baseband inputs Pins 2, 3, 22 and 23
Input voltage range
(differential)
Input impedance
Input frequency
LO1 input
Pins 4 and 5
Frequency range
Input level
1)
Input impedance
Duty cycle range
Power-down mode
Supply current
V
PD
v
0.5 V Pin 14
Settling time
C
SPD
100 pF,
C
LO
= 100 pF, C
RFo
= 1 nF
Power down voltage
Pin 14
“Power on”
V
S
= 3.5 to 5.5 V
V
S
= 2.7 to 3.5 V
“Power down”
Power down current
Power on
Power down
Symbol
Unit
dBm
dB
dB
mVpp
kW
MHz
MHz
dBm
W
Ad
ro
nic
C
om
po
ne
V
BBi
Z
BBi
f
BBi
f
LOi
P
LOi
Z
iLO
DCR
LO1
P
IFo
LO
RFo
VSWR
IFo
SBS
IFo
mA
ms
V
PON
V
PDN
I
PON
I
PDN
V
V
V
mA
mA
Note:
1
)
Required LO level is a function of the LO frequency
Rev. A2: 04.10.1995
Advanced Information
3 (6)
U2891B
Electrical Characteristics: Mixer
TELEFUNKEN Semiconductors
V
S
= 3 V, f
LO2
= 800 MHz, f
IF
= 100 MHz, P
LO2
= – 10dBm, system impedance Zo = 50
W,
T
amb
= 25
°C,
reference
point Pin 10, unless otherwise specified
Parameters
Operating frequencies
RF
O
frequency
LO2 frequency
Isolation
LO2 spurious at RF
o
Test Conditions / Pin
Pin 16
Pin 9
Pin 9–16
P
iLO
= – 10 to 0 dBm
Pin 16–9
Symbol
RF
O
f
LO2
Min.
50
50
Typ.
Max.
2500
2500
Unit
IS
LO2
-
RFo
IS
RFo-LO2
Ad
ro
nic
C
RF
o
to LO2
Output level
Output compression point
Pin 16 R
Po
=
R
Input level
Input compression point
1)
Pins 11 and 12
Input LO2
Pin 9
Third order input
Pins 11 and 12
1)
intercept point
Voltage standing wave ratio (VSWR)
Input IF
Pins 11 and 12
Input LO2
Pin 9
Output RF
Pin 16
Conversion power gain
R
L
= 50
W
Noise Figure (SSB)
2)
P
iLO
= – 6 dBm
Power-down mode
Supply current
V
PD
v
0.5 V Pin 13
Settling time
C
SPD
100 pF,
C
LO
= 100 pF, C
RFo
= 1 nF
Power down voltage
Pin 13
“Power on”
V
S
= 3.5 to 5.5 V
V
S
= 2.7 to 3.5 V
“Power down”
Power down current
Power on
Power down
Note:
1
)
with 50
W
termination resistor at Pin 11
2)
without termination resistor
CP
o
– 1 dB
CP
i
– 1dB
P
LO2
P
iIIP3
om
po
ne
VSWR
IFi
VSWR
LO2
VSWR
RF
PG
C
NF50
I
PD
t
S
V
PON
V
PDN
I
PON
I
PDN
4 (6)
Advanced Information
nt
sG
mb
H
– 30
tbd.
–7
–15
–10
–6
tbd.
tbd.
tbd.
9
13
<5
10
V
S
– 0.5
V
S
0.15
<1
V
S
+0.5
V
S
+0.5
1
MHz
MHz
dBm
dB
dBm
dBm
dBm
dBm
dB
dB
mA
ms
V
V
V
mA
mA
Rev. A2: 04.10.1995
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
