Freescale Semiconductor
Technical Data
Document Number: MRF7S18170H
Rev. 0, 10/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1805 to
1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW
Peak Tuned Output Power
•
P
out
@ 1 dB Compression Point
w
170 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S18170HR3
MRF7S18170HSR3
1805 - 1880 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S18170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S18170HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 84°C, 170 W CW
Case Temperature 79°C, 50 W CW
Symbol
R
θJC
Value
(2,3)
0.27
0.30
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF7S18170HR3 MRF7S18170HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
IA (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 372
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1400 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DS
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.72 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
0.87
703
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4
0.1
2
2.7
5.4
0.15
2.7
—
7.6
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 50 W Avg., f = 1807.5 MHz and f =
1877.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
MRF7S18170HR3
MRF7S18170HSR3
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
5.8
5.7
ACPR
IRL
—
—
6.2
6.2
- 37
- 15
—
—
- 35
-9
dBc
dB
16
29
17.5
31
19
—
dB
%
dB
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S18170HR3 MRF7S18170HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 1805 - 1880 MHz Bandwidth
Video Bandwidth
VBW
(Tone Spacing from 100 kHz to VBW)
—
25
—
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 75 MHz Bandwidth @ P
out
= 170 W CW
Deviation from Linear Phase in 75 MHz Bandwidth @ P
out
= 170 W CW
Group Delay @ P
out
= 170 W CW, f = 1840 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 170 W CW,
f = 1840 MHz
Gain Variation over Temperature
Output Power Variation over Temperature
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.4
2.5
4.2
15
0.015
0.01
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRF7S18170HR3 MRF7S18170HSR3
RF Device Data
Freescale Semiconductor
3
R3
V
BIAS
Z16
V
SUPPLY
+
R2
C4
C3
C2
Z5
C10
Z7
Z8
Z9
Z10
Z11
Z12
C9
Z13
Z14
RF
Z15 OUTPUT
C17
C11
C12
C13
RF
INPUT
R1
Z1
Z2
Z3
C1
C18
C19
C20
Z4
Z6
DUT
C14
Z17
C8
C15
C5
C16
C6
C7
Z1
Z2*
Z3*
Z4
Z5
Z6
Z7
Z8
Z9
0.410″ x 0.083″ Microstrip
0.480″ x 0.083″ Microstrip
0.710″ x 0.083″ Microstrip
0.180″ x 0.147″ Microstrip
0.850″ x 0.091″ Microstrip
0.383″ x 1.109″ Microstrip
1.110″ x 1.360″ Microstrip
0.480″ x 1.360″ Microstrip
0.060″ x 1.098″ Microstrip
Z10*
Z11*
Z12
Z13
Z14*
Z15*
Z16, Z17
PCB
0.900″ x 0.161″ Microstrip
0.140″ x 0.161″ Microstrip
0.094″ x 0.220″ Microstrip
0.070″ x 0.220″ Microstrip
0.140″ x 0.083″ Microstrip
0.160″ x 0.083″ Microstrip
1.120″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 1. MRF7S18170HR3 Test Circuit Schematic — NI - 880
Table 5. MRF7S18170HR3 Test Circuit Component Designations and Values — NI - 880
Part
C1
C2, C8, C9
C3
C4
C5, C10
C6, C7, C11, C12
C13
C14
C15, C20
C16, C17
C18
C19
R1
R2, R3
Description
0.8 pF Chip Capacitor
6.8 pF Chip Capacitors
100 pF Chip Capacitor
100 nF Chip Capacitor
5.6 pF Chip Capacitors
10
μF
Chip Capacitors
470
μF,
63 V Electrolytic Capacitor, Radial
0.5 pF Chip Capacitor
0.2 pF Chip Capacitors
4.7 pF Chip Capacitors
2 pF Chip Capacitor
0.3 pF Chip Capacitor
10
W,
1/4 W Chip Resistor
10 kW, 1/4 W Chip Resistors
Part Number
100B0R8BW
100B6R8BW
100B101JW
100B104JW
100B5R6BW
C5750X5R1H106MT
13661471
600B0R5BW
100B0R2BW
100B4R7BW
600B2R0BW
100B0R3BW
232272461009
232272461003
Manufacturer
ATC
ATC
ATC
ATC
ATC
TDK
Philips
ATC
ATC
ATC
ATC
ATC
Phycomp
Phycomp
MRF7S18170HR3 MRF7S18170HSR3
4
RF Device Data
Freescale Semiconductor
R2
R3
C4
C3
C13
C2
C10
C17
C11
C12
R1
C1
CUT OUT AREA
C9
C8
C14
C15
C18
C19
C20
C5
C16
C6
C7
MRF7S18170H
Rev. 4
Figure 2. MRF7S18170HR3 Test Circuit Component Layout — NI - 880
MRF7S18170HR3 MRF7S18170HSR3
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
