HL6340MG/41MG
Circular Beam Low Operating Current
ODE-208-1437D (Z)
Rev.4
Mar. 2005
Description
The HL6340MG/41MG are 0.63
µm
band AlGaInP laser diodes can be operated with low operating current.
These products were designed by self aligned refractive index (SRI) active layer structure. These are
suitable as a light source for laser levelers, laser scanners and optical equipment for measurement.
Application
•
Laser leveler
•
Laser scanner
•
Measurement
Features
•
•
•
•
•
•
•
Optical output power : 5 mW CW
Single longitudinal mode
Visible light power
: 635 nm Typ
Low operating current : 25 mA Typ
Low aspect ratio
: 1.2 Typ
Operating temperature : +50°C
TM mode oscillation
Package Type
•
HL6340MG/41MG: MG
Internal Circuit
•
HL6340MG
1
3
Internal Circuit
•
HL6341MG
1
3
PD
LD
PD
LD
2
2
HL6340MG/41MG
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O(Pulse)
V
R(LD)
V
R(PD)
Topr
Tstg
Value
5
6*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Note: Pulse condition : Pulse width
≤
1
µs,
duty = 50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Optical output power
Threshold current
Slope efficiency
Operating current
Operating voltage
Lasing wavelength
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Aspect ratio
Monitor current
Symbol
P
O
Ith
ηs
I
OP
V
OP
λp
θ//
θ⊥
θ⊥/θ//
I
S
Min
5
—
0.5
—
—
630
13
16
—
0.01
Typ
—
20
0.8
25
2.4
635
17
20
1.2
0.03
Max
—
30
1.1
40
2.7
640
25
25
1.5
0.06
Unit
mW
mA
mW/mA
mA
V
nm
deg.
deg.
—
mA
Test Condition
—
—
3 (mW) / (I
(4mW)
– I
(1mW)
)
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW, V
R(PD)
= 5 V
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward
surges as well as by ESD.
2. The wavefront performance is not guaranteed.
3. The beam has 12 deg offset against the package reference plane. Please take account it
mounted on a board.
Rev.4, Mar. 2005, page 2 of 9
HL6340MG/41MG
Typical Characteristic Curves
Optical Output Power vs. Forward Current
5
T
C
= 10˚C
4
25˚C
3
40˚C
Monitor current, I
S
(mA)
Optical output power, P
O
(mW)
Monitor Current vs. Optical Output Power
0.10
V
R(PD)
= 5V
T
C
= 25˚C
0.08
50˚C
0.06
2
0.04
1
0.02
0
0
50
10
20
30
40
Forward current, I
F
(mA)
60
0
0
1
2
3
4
Optical output power, P
O
(mW)
5
Slope Efficiency vs. The Case Temperature
1.4
Slope efficiency,
ηs
(mW/mA)
Threshold current, Ith (mA)
Threshold Current vs. The Case Temperature
100
1.2
1.0
0.8
0.6
0.4
0.2
0
–10
0
10
20
30
40
Case temperature, T
C
(˚C)
50
50
20
10
–10
0
10
20
30
40
Case temperature, T
C
(˚C)
50
Rev.4, Mar. 2005, page 3 of 9
HL6340MG/41MG
Monitor Corrent Vs. The Case Temperature
0.05
P
O
= 5mW
V
R
= 5V
0.04
Lasing Wavelength vs. The Case Temperature
645
P
O
= 5mW
Lasing wavelength,
λp
(nm)
Monitor current, I
S
(mA)
640
0.03
635
0.02
0.01
0
–10
630
0
10
20
30
40
Case temperature, T
C
(˚C)
50
625
–10
0
10
20
30
40
Case temperature, T
C
(˚C)
50
Astigmatism vs. Optical Output Power
5
Far Field Pattern
T
C
= 25˚C
NA = 0.55
Relative intensity
P
O
= 5mW
0.8 T
C
= 25˚C
0.6
0.4
Parallel
0.2
0
–40 –30 –20 –10 0 10 20
Angle,
θ
(deg.)
30
40
Perpendicular
Astigmatism, A
S
(µm)
1.0
4
3
2
1
0
0
1
2
3
4
Optical output power, P
O
(mW)
5
Rev.4, Mar. 2005, page 4 of 9
HL6340MG/41MG
Electrostatic Destruction
100
80
Survival rate (%)
Survival rate (%)
Electrostatic Destruction
100
80
60
40
20
0
60
40
20
0
Forward
(C : 100pF, R : 1.5kΩ)
N=10pcs
∆I
O
≤
10%
judgment
0
100
200
Applied voltage (V)
300
Revarse
(C : 100pF, R : 1.5kΩ)
N=10pcs
∆I
O
≤
10%
judgment
0
0.5
1.0
Applied voltage (kV)
1.5
Rev.4, Mar. 2005, page 5 of 9
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