EEPROM
Austin Semiconductor, Inc.
128K x 32 EEPROM
Radiation Tolerant
EEPROM Memory Array
AVAILABLE AS MILITARY
SPECIFICATIONS
•
MIL-STD-883
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
AS8ER128K32
PIN ASSIGNMENT
(Top View)
68 Lead CQFP
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Vcc
A11
A12
A13
*A15
*A14
A16
CS1\
OE\
CS2\
NC
WE2\
WE3\
WE4\
NC
NC
RDY
RES\
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
FEATURES
•
•
•
Access time of 150ns
Operation with single 5V + 10% supply
Power Dissipation:
Active: 1.43 W (MAX), Max Speed Operation
Standby: 7.7 mW (MAX), Battery Back-up Mode
On-Chip Latches: Address, Data, CE\, OE\, WE\
Automatic Byte Write: 10 ms (MAX)
Automatic Page Write (128 bytes): 10 ms (MAX)
Data protection circuit on power on/off
Low power CMOS
10
4
Erase/Write cycles (in Page Mode)
Software data protection
TTL Compatible Inputs and Outputs
Data Retention: 10 years
Ready/Busy\ and Data Polling Signals
Write protection by RES\ pin
Radiation Tolerant: Proven total dose 40K to 100K RADS*
Operating Temperature Ranges:
Military: -55
o
C to +125
o
C
Industrial: -40
o
C to +85
o
C
•
•
•
•
•
•
•
•
•
•
•
•
•
*Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct
use of these address lines is required for operation of the SDP mode to work properly.
PIN NAME
A0 to A16
I/O0 to I/O31
OE\
CE\
WE\
V
CC
FUNCTION
Address Input
Data Input/Output
Output Enable
Chip Enable
Write Enable
Power Supply
OPTIONS
•
•
MARKINGS
-15
Q
No. 703
Ground
V
SS
RDY/BUSY\ Ready Busy
RES\
Reset
Timing
150 ns
Package
Ceramic Quad Flat pack
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8ER128K32 is a 4 Megabit
Radiation Tolerant EEPROM Module organized as 128K x 32 bit.
User configurable to 256K x16 or 512Kx 8. The module achieves high
speed access, low power consumption and high reliability by employ-
ing advanced CMOS memory technology.
The military grade product is manufactured in compliance to
MIL-STD 883, making the AS8ER128K32 ideally suited for military
or space applications.
The module is offered as a 68 lead 0.990 inch square ceramic
quad flat pack. It has a max. height of 0.200 inch. This package design
is targeted for those applications which require low profile SMT Pack-
aging.
* contact factory for test reports. ASI does not guarantee or warrant these
performance levels, but references these third party reports.
AS8ER128K32
Rev. 3.0 1/02
FUNCTIONAL BLOCK DIAGRAM
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
EEPROM
Austin Semiconductor, Inc.
AS8ER128K32
TRUTH TABLE
MODE
Read
Standby
Write
Deselect
Wirte Inhibit
Data\ Polling
Program Reset
CE\
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE\
V
IL
X
3
WE\
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
RES\
V
H
X
V
H
V
H
X
X
V
H
V
IL
2
RDY/BUSY\
High-Z
High-Z
1
I/O
Dout
High-Z
Din
High-Z
---
---
Dout (I/O7)
High-Z
V
IH
V
IH
X
V
IL
V
IL
X
High-Z to V
OL
High-Z
---
---
V
OL
High-Z
NOTES:
1. RDY/Busy\ output has only active LOW V
OL
and high impedance state. It can not go to HIGH (V
OH
) state.
2. V
CC
-0.5 < V
H
< V
CC
+1.0
3. X : DON'T CARE
AS8ER128K32
Rev. 3.0 1/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
EEPROM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Vcc ....................................................................-0.6V to +7.0V
Operating Temperature Range
(1)
..................-55°C to +125°C
Storage Temperature Range .........................-65°C to +150°C
Voltage on any Pin Relative to Vss..............-0.5V to +7.0V
(2)
Max Junction Temperature**.......................................+150°C
Thermal Resistance junction to case (θ
JC
):
Package Type Q...........................................11.3° C/W
Package Type P & PN..................................2.8° C/W
NOTES:
1) Including electrical characteristics and data retention.
2) V
IN
MIN = -3.0V for pulse width < 20ns.
AS8ER128K32
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow, and humidity
(plastics).
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C<T
A
<125
o
C or -40
o
C to +85
o
C; Vcc = 5V + 10%)
PARAMETER
Input High Voltage
Input High Voltage (RES\)
Input Low Voltage
INPUT LEAKAGE CURRENT
OUTPUT LEAKAGE CURRENT
Output High Voltage
Output Low Voltage
Supply Voltage
OV < V
IN
< V
CC
Outputs(s) Disabled,
OV < V
OUT
< V
CC
I
OH
= -0.4mA
I
OL
= 2.1mA
CONDITIONS
SYMBOL
V
IH
V
H
V
IL
I
LI
I
LO
V
OH
V
OL
V
CC
MIN
2.2
V
CC
-0.5
1
-0.3
-10
-10
2.4
--
4.5
MAX
V
CC
+0.3
V
CC
+1.0
0.8
10
2
10
--
0.4
5.5
UNITS
V
V
V
µΑ
µΑ
V
V
V
NOTE:
1) V
IL
(MIN): -1.0V for pulse width < 20ns.
2) I
LI
on RES\ : 500µA (MAX)
PARAMETER
CONDITIONS
Iout = 0mA, V
CC
= 5.5V
Cycle = 1µS, Duty = 100%
SYM
MAX
-15
80
UNITS
Power Supply Current:
Operating
I
cc3
Iout = 0mA, V
CC
= 5.5V
Cycle = MIN, Duty = 100%
CE\ = V
CC,
V
CC
= 5.5V
CE\ = V
IH,
V
CC
= 5.5V
I
CC1
I
CC2
260
mA
1.4
12
mA
mA
Power Supply Current:
Standby
AS8ER128K32
Rev. 3.0 1/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
EEPROM
Austin Semiconductor, Inc.
CAPACITANCE TABLE
1
(V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C)
SYMBOL
C
ADD
C
OE
C
WE,
C
CE
C
IO
PARAMETER
A0 - A16 Capacitance
OE\, RES\, RDY Capacitance
WE\ and CE\ Capacitance
I/O 0- I/O 31 Capacitance
MAX
40
40
12
20
UNITS
pF
pF
pF
pF
AS8ER128K32
NOTE:
1. This parameter is guaranteed but not tested.
AC TEST CHARACTERISTICS
TEST SPECIFICATIONS
Input pulse levels...........................................V
SS
to 3V
Input rise and fall times...........................................5ns
Input timing reference levels.................................1.5V
Output reference levels.........................................1.5V
Output load................................................See Figure 1
NOTES:
Vz is programmable from -2V to + 7V.
I
OL
and I
OH
programmable from 0 to 16 mA.
Vz is typically the midpoint of V
OH
and V
OL
.
I
OL
and I
OH
are adjusted to simulate a typical resistive load
circuit.
Current Source
I
OL
Device
Under
Test
-
+
+
Vz = 1.5V
(Bipolar
Supply)
Ceff = 50pf
Current Source
I
OH
Figure 1
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C or -40
o
C to +85
o
C; Vcc = 5V +10%)
DESCRIPTION
Address to Output Delay
CE\ to Output Delay
OE\ to Output Delay
Address to Output Hold
CE\ or OE\ high to Output Float (1)
RES\ low to Output Float (1)
RES\ to Output Delay
TEST CONDITIONS
CE\ = OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
150
SYMBOL
t
ACC
t
CE
t
OE
t
OH
t
DF
t
DFR
t
RR
10
0
0
0
0
50
350
450
MIN
MAX
150
150
75
UNITS
ns
ns
ns
ns
ns
ns
ns
AS8ER128K32
Rev. 3.0 1/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
EEPROM
Austin Semiconductor, Inc.
AS8ER128K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS
(-55
o
C < T
A
< +125
o
C; Vcc = 5V +10%)
SYMBOL
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
Address Hold Time
CE\ to Write Setup Time (WE\ controlled)
CE\ Hold Time (WE\ controlled)
WE\ to Write Setup Time (CE\ controlled)
WE\ to Hold Time (CE\ controlled)
OE\ to Write Setup Time
OE\ to Hold Time
Data Setup Time
Data Hold Time
WE\ Pulse Width (WE\ controlled)
CE\ Pulse Width (CE\ controlled)
Data Latch Time
Byte Load Cycle
Byte Load Window
Write Cycle Time
Time to Device Busy
Write Start Time
Reset Protect Time
Reset High Time
(5)
PARAMETER
Address Setup Time
MIN
(2)
0
150
0
0
0
0
0
0
100
10
250
250
300
0.55
100
MAX
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
30
(3)
µs
µs
10
120
150
1
(4)
ms
ns
ns
µs
µs
100
READ TIMING WAVEFORM
ADDRESS
CE\
t
ACC
t
CE
t
OE
t
DF
t
OH
OE\
WE\
Data Out
V
IH
HIGH-Z
t
RR
DATA OUT VALID
t
DFR
RES\
AS8ER128K32
Rev. 3.0 1/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
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