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RD38F1020C0ZBL0

产品描述3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
产品类别存储    存储   
文件大小726KB,共70页
制造商Intel(英特尔)
官网地址http://www.intel.com/
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RD38F1020C0ZBL0概述

3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye

RD38F1020C0ZBL0规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Intel(英特尔)
零件包装代码BGA
包装说明LFBGA, BGA66,8X12,32
针数66
Reach Compliance Codeunknown
最长访问时间70 ns
其他特性SRAM IS ORGANIZED AS 512K X 16
JESD-30 代码R-PBGA-B66
JESD-609代码e0
长度10 mm
内存密度33554432 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度16
混合内存类型FLASH+SRAM
功能数量1
端子数量66
字数2097152 words
字数代码2000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-25 °C
组织2MX16
封装主体材料PLASTIC/EPOXY
封装代码LFBGA
封装等效代码BGA66,8X12,32
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE, FINE PITCH
电源3 V
认证状态Not Qualified
座面最大高度1.4 mm
最大待机电流0.000006 A
最大压摆率0.05 mA
最大供电电压 (Vsup)3.3 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL EXTENDED
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
宽度8 mm

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3 Volt Intel
®
Advanced+ Boot Block
Flash Memory (C3) Stacked-Chip Scale
Package Family
Datasheet
Product Features
Flash Memory Plus SRAM
— Reduces Memory Board Space
Required, Simplifying PCB Design
Complexity
Stacked-Chip Scale Package (Stacked-
CSP) Technology
— Smallest Memory Subsystem Footprint
— Area : 8 x 10 mm for 16Mbit (0.13 µm)
Flash + 2Mbit or 4Mbit SRAM
— Area : 8 x 12 mm for 32Mbit (0.13 µm)
Flash + 4Mbit or 8Mbit SRAM
— Height : 1.20 mm for 16Mbit (0.13 µm)
Flash + 2Mbit or 4Mbit SRAM and
32Mbit (0.13um) Flash + 8Mbit SRAM
— Height : 1.40 mm for 32Mbit (0.13 µm)
Flash + 4Mbit SRAM
— This Family also includes 0.25 µm and
0.18 µm technologies
Advanced SRAM Technology
— 70 ns Access Time
— Low Power Operation
— Low Voltage Data Retention Mode
Intel
®
Flash Data Integrator (FDI)
Software
— Real-Time Data Storage and Code
Execution in the Same Memory Device
— Full Flash File Manager Capability
Advanced+ Boot Block Flash Memory
— 70 ns Access Time at 2.7 V
— Instant, Individual Block Locking
— 128 bit Protection Register
— 12 V Production Programming
— Ultra Fast Program and Erase Suspend
— Extended Temperature –25 °C to +85 °C
Blocking Architecture
— Block Sizes for Code + Data Storage
— 4-Kword Parameter Blocks (for data)
— 64-Kbyte Main Blocks (for code)
— 100,000 Erase Cycles per Block
Low Power Operation
— Async Read Current: 9 mA (Flash)
— Standby Current: 7 µA (Flash)
— Automatic Power Saving Mode
Flash Technologies
— 0.25 µm ETOX™ VI, 0.18 µm ETOX™
VII and 0.13 µm ETOX™ VIII Flash
Technologies
— 28F160xC3, 28F320xC3
The 3 Volt Intel
®
Advanced+ Boot Block Flash Memory (C3) Stacked-Chip Scale Package
(Stacked-CSP) device delivers a feature-rich solution for low-power applications. The C3
Stacked-CSP memory device incorporates flash memory and static RAM in one package with
low voltage capability to achieve the smallest system memory solution form-factor together with
high-speed, low-power operations. The C3 Stacked-CSP memory device offers a protection
register and flexible block locking to enable next generation security capability. Combined with
the Intel
®
Flash Data Integrator (Intel
®
FDI) software, the C3 Stacked-CSP memory device
provides a cost-effective, flexible, code plus data storage solution.
Notice:
This document contains information on new products in production. The specifications
are subject to change without notice. Verify with your local Intel sales office that you have the lat-
est datasheet before finalizing a design.
252636-001
February, 2003

 
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