RO-P-DS-3066 - -
400mW Ku-Band Power Amplifier
15.5-18.0 GHz
Preliminary Information
MAAPGM0046-DIE
Features
♦
♦
♦
♦
15.5-18.0 GHz GaAs MMIC Amplifier
400 mW Saturated Output Power Level
15.5-18.0 GHz Operation
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
®
MESFET Process
Primary Applications
♦
Point-to-Point Communications
♦
Ku Satellite Communications
Description
The
MAAPGM0046-Die
is a 3-stage 400mW power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on both
the input and output. It can be used as a power amplifier stage or as
a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction Self-Aligned
Gate (MSAG
®
) MESFET Process. This process provides polyimide
scratch protection.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 8V, V
GG
= -1.8V, P
in
= 12 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Current
Drain Current
Output Third Order Intercept
Noise Figure
3
rd
Order Intermodulation Distortion,
Single Carrier Level = 18 dBm
5
th
Order Intermodulation Distortion,
Single Carrier Level = 18 dBm
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
VSWR
I
GG
I
DD
OTOI
NF
IM3
IM5
Typical
15.5 -18.0
26
11
25
16
3:1
2:1
<2
< 600
32
8
34
47
mA
mA
dBm
dB
dBc
dBc
Units
GHz
dBm
%
dBm
dB
1. T
B
= MMIC Base Temperature
RO-P-DS-3066 - -
2/6
400mW Ku-Band Power Amplifier
Maximum Operating Conditions
1
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
MAAPGM0046-DIE
Absolute Maximum
17.0
+12.0
-3.0
660
5.1
180
-55 to +150
Units
dBm
V
V
mA
W
°C
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Voltage
Gate Voltage
Input Power
Junction Temperature
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
T
B
Min
4.0
-2.3
Typ
8.0
-2.0
12.0
Max
10.0
-1.5
15.0
150
Note 2
Unit
V
V
dBm
°C
°C
2. Maximum MMIC Base Temperature = 150°C - 15.8°C/W * V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -1.8 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8.0 V.
3. Adjust V
GG
to set I
DQ
, (approximately @ –1.8 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3066 - -
3/6
400mW Ku-Band Power Amplifier
40
MAAPGM0046-DIE
28
POUT
PAE
35
24
30
20
POUT (dBm)
20
12
15
8
10
4
5
15.0
15.5
16.0
16.5
17.0
17.5
0
18.0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 8V
and P
in
= 12dBm.
40
35
30
POUT
PAE
30
25
20
15
10
5
0
-5
4
5
6
7
8
9
10
POUT (dBm)
25
20
15
10
5
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 16.5 GHz.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
PAE (%)
25
16
RO-P-DS-3066 - -
4/6
400mW Ku-Band Power Amplifier
40
35
VDD = 4
VDD = 8
MAAPGM0046-DIE
VDD = 6
VDD = 10
30
P1dB (dBm)
25
20
15
10
5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
GAIN
INPUT VSW R
6
25
OUTPUT VSW R
5
Gain (dB)
20
4
15
3
10
2
5
15.0
15.5
16.0
16.5
17.0
17.5
1
18.0
Frequency (GHz)
Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
VSWR
RO-P-DS-3066 - -
5/6
400mW Ku-Band Power Amplifier
MAAPGM0046-DIE
Mechanical Information
Chip Size: 3.000 x 1.824 x 0.075 mm
1.50mm.
0.14mm.
(
118
x 72 x 3 mils)
2.87mm.
GND:G
3.00mm.
1.82mm.
1.66mm.
GN D :G
GN D:G
GND :G
G ND:G
V
DD
GND:G
GN D :G
GND:G
GND:G
GND:G
GND: G
GN D :G
GN D:G
GND :G
GN D:G
GND:G
GND:G
GND:G
G ND:G
GND :G
0.86mm.
IN
ND
:G
G
GND :G
GND :G
GN D :G
GND:G
GN D:G
GND :G
GN
D:
G
GN
D:
G
GN D :G
GN D:G
GN D:G
G
ND
:G
G
:G
ND
GN
D:
G
G N D :G
GN D:G
GND :G
GND :G
GND :G
GND :G
OUT
0.86mm.
GN D :G
GN D:G
GN D:G
GN D:G
G ND :G
G ND :G
G
ND
:G
GND:G
GN D:G
GND:G
GND :G
GND :G
GND :G
GN
D:
G
GND:G
GND:G
GND:G
0.16mm.
0
V
GG
GN D:G
GN D :G
GND :G
GND:G
GND :G
GN D:G
0
Figure 5. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
1.50mm.
Bond Pad Dimensions
Pad
Size (
µ
m)
100 x 200
200 x 150
150 x 150
Size (mils)
4x8
8x6
6x6
RF: IN, OUT
DC: V
DD
DC: V
GG
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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