time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the
product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 05/20/2015
3
IS31LT3353
ABSOLUTE MAXIMUM RATINGS (Note 1)
Input voltage, V
IN
ISENSE voltage, V
SENSE
LX output voltage, V
LX
Adjust pin input voltage, V
ADJ
Switch output current, I
LX
Power dissipation, P
D(MAX)
(SOT23-5)(Note 2)
Power dissipation, P
D(MAX)
(SOT89-5)
Operating temperature, T
A
Storage temperature, T
ST
Junction temperature, T
JMAX
Junction to ambient,
θ
JA
(SOT23-5)
Junction to ambient,
θ
JA
(SOT89-5)
ESD (HBM) at LX pin
ESD (HBM) at other pins
ESD (CDM)
-0.3V ~ +43V
V
IN
-5V ~ V
IN
+0.3V (V
IN
≥5V)
-0.3V ~ V
IN
+0.3V (V
IN
<5V)
-0.3V ~ +43V
-0.3V ~ +6V
1.2A
0.46W
0.94W
-40°C ~ +125°C
-55°C ~ +150°C
150°C
271°C/W
132.6°C/W
1kV
3kV
1kV
Note 1:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 2:
Detail information please refer to package thermal de-rating curve on Page 12.
ELECTRICAL CHARACTERISTICS
Test conditions: V
IN
= 12V, T
A
=T
J
= 25°C, unless otherwise stated. (Note 3)
Symbol
V
IN
I
INQ_OFF
I
INQ_ON
V
SENSE
V
SENSEHYS
I
SENSE
V
REF
V
ADJ
V
ADJ_OFF
Input voltage
Quiescent supply current with output off
Quiescent supply current with output
switching
Mean current sense threshold voltage
Sense threshold hysteresis
I
SENSE
pin input current
Internal reference voltage
External control voltage range on ADJ
pin for dc brightness control
DC voltage on ADJ pin to switch chip
from active (on) state to quiescent (off)
state
DC voltage on ADJ pin to switch chip
from quiescent (off) state to active (on)
state
Resistance between ADJ pin and V
REF
Continuous LX switch current
(Note 4)
V
ADJ
falling
V
SENSE
=V
IN
-0.1V
Measured on ADJ pin
with pin floating
0.3
0.15
0.2
ADJ pin grounded
ADJ pin floating
97
Parameter
Conditions
Min.
6
70
120
450
100
±15
8
1.2
1.2
0.25
Typ.
Max.
40
160
600
103
Unit
V
μA
μA
mV
%
μA
V
V
V
V
ADJ_ON
R
ADJ
I
LX_MEAN
V
ADJ
rising
0.2
0.25
500
1
0.3
V
kΩ
A
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 05/20/2015
4
IS31LT3353
ELECTRICAL CHARACTERISTICS (CONTINUED)
Test conditions: V
IN
= 12V, T
A
=T
J
= 25°C, unless otherwise stated. (Note 3)
Symbol
I
LX_LEAK
R
LX
t
ON_MIN
t
OFF_MIN
D
DIM
f
LX_MAX
D
LX
t
PD
T
SD
T
SD_HYS
Parameter
LX switch leakage current
LX switch ‘ON’ resistance
Minimum switch ‘ON’ time
Minimum switch ‘OFF’ time
Typical contrast ratio
Recommended maximum
operating frequency
Recommended duty cycle range
of output switch at f
LX_MAX
Internal comparator propagation
delay
Thermal shutdown temperature
Thermal shutdown hysteresis
LX switch ‘ON’ (Note 4)
LX switch ‘OFF’ (Note 4)
f
PWM
=100Hz, V
IN
=15V,
1LED, L=27µH (Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
30
70
50
150
20
0.5
200
200
1200:1
1
90
Conditions
Min.
Typ.
Max.
1
1
Unit
μA
Ω
ns
ns
1
MHz
%
ns
°C
°C
Note 3:
Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over -40°C to
+125°C temperature range, are guaranteed by design, characterization and process control.
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