RF Low Noise FET
CE3514M4
12GHz Low Noise FET in Dual Mold Plastic PKG
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DESCRIPTION
PACKAGE
Low Noise and High Gain
Original Dual Mold Plastic package
Flat-lead 4-pin thin-type super minimold
package
FEATURES
Low noise figure and high associated gain
NF=0.42dB TYP., Ga=12.2dB TYP. @VDS=2V,
ID=10mA, f=12GHz
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
CE3514M4
Order Number
CE3514M4-C2
Package
Flat-lead 4-pin
thin-type super
minimold
package
Marking
C0F
Description
•
Embossed tape 8 mm wide
•
Pin 1(Source), Pin 2 (Drain)
Face the perforation side of
the Tape
•
MOQ 15 kpcs/reel
This document is subject to change without notice.
Date Published: July 2016
CDS-0021-02 (Issue A)
1
CE3514M4
PIN CONFIGURATION :
PIN No.
1
2
3
4
PIN Name
Source
Drain
Source
Gate
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25˚C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Operation Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
T
op
Rating
4.0
-3.0
I
DSS
80
125
+150
-55 to +125
-55 to +125
Note
Unit
V
V
mA
µA
mW
°C
°C
°C
Note
Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4
RECOMMENDED OPERATING RANGE
(T
A
= +25˚C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Symbol
V
DS
I
D
MIN.
+1
5
TYP.
+2
10
MAX.
+3
15
Unit
V
mA
This document is subject to change without notice.
2
CE3514M4
ELECTRICAL CHARACTERISTICS
(T
A
= +25˚C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS(off)
Gm
NF
Ga
Condition
V
GS
= -3.0V
V
DS
= 2V, V
GS
= 0V
V
DS
= 2V, I
D
= 120µA
V
DS
= 2V, I
D
= 10mA
V
DS
= 2V, I
D
= 10mA,
f = 12GHz
MIN.
-
27
-1.10
54
-
10.5
TYP.
0.4
47.5
-0.75
69
0.42
12.2
MAX.
10
68
-0.39
-
0.62
-
Unit
µA
mA
V
mS
dB
dB
This document is subject to change without notice.
3
CE3514M4
TYPICAL CHARACTERISTICS :
(TA=+25
℃
, unless otherwise specified)
TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
DRAIN CURRENT VS.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT VS.
GATE TO SOURCE VOLTAGE
MINIMUM NOISE FIGURE &
ASSOCIATED GAIN VS. DRAIN CURRENT
This document is subject to change without notice.
4
CE3514M4
S-PARAMETERS
S-Parameters are available on the CEL web site.
RECOMMENDED SOLDERING CONDITIONS
Recommended Soldering Conditions are provided on the CEL web site.
PACKAGE DIMENSIONS
This document is subject to change without notice.
5
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