Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA1659 2SA1659A
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SC4370/4370A
・High
transition frequency f
T
APPLICATIONS
・High
voltage applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
2SA1659
V
CBO
Collector-base voltage
2SA1659A
2SA1659
V
CEO
Collector-emitter voltage
2SA1659A
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-180
-5
-1.5
-0.15
20
150
-55~150
V
A
A
W
℃
℃
Open emitter
-180
-160
V
CONDITIONS
VALUE
-160
V
UNIT
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA1659
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1659A
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
OB
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
I
C
=-0.5A;I
B
=-50mA
I
C
=-0.5A ; V
CE
=-5V
V
CB
=-160V;I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-5V
I
C
=-0.1A ; V
CE
=-10V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=10mA ; I
B
=0
CONDITIONS
2SA1659 2SA1659A
MIN
-160
TYP.
MAX
UNIT
V
-180
-1.5
-1.0
-1
-1
70
100
30
240
MHz
pF
V
V
μA
μA
h
FE
classifications
O
70-140
Y
120-240
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1659 2SA1659A
Fig.2 Outline dimensions
JMnic
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