Variable Capacitance Diodes
MA27V12
Silicon epitaxial planar type
Unit: mm
For VCO
s
Features
•
Good linearity and large capacitance-ratio in C
D
−
V
R
relation
•
High frequency type by this low capacitance
•
Ultraminiature Package 1.0 mm
×
0.6 mm (height: 0.52 mm),
optimum for high-density mounting and high-spped mounting
0.27
+0.05
–0.02
2
0.10
+0.05
–0.02
1.00
±0.05
1.40
±0.05
1
0.60
±0.05
5°
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Junction temperature
Storage temperature
Symbol
V
R
T
j
T
stg
Rating
8
125
−55
to
+125
Unit
V
°C
°C
0.15 min.
5°
0 to 0.01
1: Anode
2: Cathode
SSSMini2-F1 Package
Marking Symbol: E
s
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Diode capacitance
Symbol
I
R
C
D(1V)
C
D(4V)
Capacitance ratio
Series resistance
*
C
D(1V)
/C
D(4V)
r
D
V
R
=
4 V, f
=
470 MHz
V
R
=
5 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
3.60
1.97
1.75
Conditions
Min
Typ
Max
10
3.90
2.14
1.90
0.35
Ω
Unit
nA
pF
Note) 1. Rated input/output frequency: 470 MHz
2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15 max.
0.52
±0.03
0.15 min.
Publication date: April 2002
SKD00060AED
1
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