AUTOMOTIVE GRADE
AUIRFR4105Z
AUIRFU4105Z
HEXFET
®
Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
DSS
R
DS(on)
I
D
D
55V
max.
24.5m
30A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
G
S
D
D-Pak
AUIRFR4105Z
I-Pak
AUIRFU4105Z
G
Gate
D
Drain
S
Source
Base part number
AUIRFU4105Z
AUIRFR4105Z
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFU4105Z
AUIRFR4105Z
AUIRFR4105ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
30
21
120
48
0.32
± 20
29
46
See Fig.15,16, 12a, 12b
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.12
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-12-1
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRFR/U4105Z
Min. Typ. Max. Units
Conditions
55
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.053 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
19
24.5 m V
GS
= 10V, I
D
= 18A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
16
––– –––
S V
DS
= 15V, I
D
= 18A
––– –––
20
V
DS
= 55V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 55V,V
GS
= 0V,T
J
=125°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
18
5.3
7.0
10
40
26
24
4.5
7.5
740
140
74
450
110
180
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 18A
nC
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 18A
ns
R
G
= 24.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 18A, V
GS
= 0V
ns T
J
= 25°C ,I
F
= 18A, V
DD
= 28V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
Output Capacitance
C
oss
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Typ. Max. Units
–––
–––
–––
19
14
30
120
1.3
29
21
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax ,
starting T
J
= 25°C, L = 0.18mH, R
G
= 25, I
AS
= 18A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting T
J
= 25°C, L = 0.18mH, R
G
= 25, I
AS
= 18A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
is measured at T
J
approximately 90°C.
R
2
2015-12-1
AUIRFR/U4105Z
1000
1000
V
GS
V
GS
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
60µs PULSE WIDTH
Tj = 175°C
1
0.1
0
0.1
0.1
0
1
10
10
100
100
1
10
100
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
30
T J = 175°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
)
25
20
15
10
5
0
T J = 25°C
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0
4
5
6
7
8
9
10
VDS = 8.0V
380µs PULSE WIDTH
0
10
20
30
40
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
Vs. Drain Current
2015-12-1
3
AUIRFR/U4105Z
1200
1000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
20
ID= 18A
VDS= 44V
VDS= 28V
VDS= 11V
16
C, Capacitance (pF)
800
Ciss
12
600
8
400
200
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
0
5
10
15
VDS, Drain-to-Source Voltage (V)
20
25
30
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.0
T J = 175°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1.0
T J = 25°C
VGS = 0V
1msec
10msec
100
1000
0.1
0.0
0.5
1.0
1.5
2.0
VSD , Source-toDrain Voltage (V)
0.1
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-12-1
AUIRFR/U4105Z
30
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 18A
2.0
25
VGS = 10V
ID , Drain Current (A)
20
15
1.5
10
1.0
5
0
25
50
75
100
125
150
175
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
C
1
2
3
3
C
Ri (°C/W)
1.100
1.601
0.418
i
(sec)
0.000174
0.000552
0.007193
0.1
Ci=
iRi
Ci=
iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-12-1
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