MMBT2907AL,
SMMBT2907AL
General Purpose Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Collector Current
−
Peak (Note 3)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Value
−60
−60
−5.0
−600
−1200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
2
3
SOT−23 (TO−236AB)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
−
FR− 5 Board
(Note 1) @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
−
Alumina
Substrate, (Note 2) @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
−
Heat Spreader
or equivalent, (Note 4) @T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
350
357
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
°C/W
°C
1
2F = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING DIAGRAM
2F M
G
G
R
qJA
P
D
R
qJA
P
D
R
qJA
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Reference SOA curve.
4. Heat Spreader or equivalent = 450 mm
2
, 2 oz.
ORDERING INFORMATION
Device
MMBT2907ALT1G
SMMBT2907ALT1G
MMBT2907ALT3G
SMMBT2907ALT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
August, 2013
−
Rev. 13
1
Publication Order Number:
MMBT2907ALT1/D
MMBT2907AL, SMMBT2907AL
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
=
−1.0
mAdc, I
B
= 0)
(I
C
=
−10
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage (I
C
=
−10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage (I
E
=
−10
mAdc,
I
C
= 0)
Collector Cutoff Current (V
CE
=
−30
Vdc, V
EB(off)
=
−0.5
Vdc)
Collector Cutoff Current
(V
CB
=
−50
Vdc, I
E
= 0)
(V
CB
=
−50
Vdc, I
E
= 0, T
A
= 125°C)
Base Cutoff Current (V
CE
=
−30
Vdc, V
EB(off)
=
−0.5
Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−0.1
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−150
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−500
mAdc, V
CE
=
−10
Vdc) (Note 5)
Collector
−Emitter
Saturation Voltage (Note 5)
(I
C
=
−150
mAdc, I
B
=
−15
mAdc) (Note 5)
(I
C
=
−500
mAdc, I
B
=
−50
mAdc)
Base
−Emitter
Saturation Voltage (Note 5)
(I
C
=
−150
mAdc, I
B
=
−15
mAdc)
(I
C
=
−500
mAdc, I
B
=
−50
mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product (Notes 5, 6),
(I
C
=
−50
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Output Capacitance (V
CB
=
−10
Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
=
−2.0
Vdc, I
C
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
Turn−Off Time
Storage Time
Fall Time
(V
CC
=
−6.0
Vdc, I
C
=
−150
mAdc,
I
B1
= I
B2
=
−15
mAdc)
(V
CC
=
−30
Vdc, I
C
=
−150
mAdc,
I
B1
=
−15
mAdc)
t
on
t
d
t
r
t
off
t
s
t
f
−
−
−
−
−
−
45
10
40
100
80
30
ns
f
T
C
obo
C
ibo
200
−
−
−
8.0
30
MHz
pF
h
FE
−
75
100
100
100
50
−
−
−
−
−
−
−
300
−
Vdc
−0.4
−1.6
Vdc
−1.3
−2.6
V
(BR)CEO
−60
−60
−60
−5.0
−
−
−
−
−
−
−
−
−50
−0.010
−10
−50
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
Vdc
Vdc
nAdc
mAdc
I
BL
nAdc
V
CE(sat)
V
BE(sat)
5. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
6. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
INPUT
Z
o
= 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-16 V
200 ns
50
1.0 k
INPUT
Z
o
= 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
0
-30 V
200 ns
+15 V
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
1N916
-30 V
200
1.0 k
1.0 k
50
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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2
MMBT2907AL, SMMBT2907AL
TYPICAL CHARACTERISTICS
1000
T
J
= 150°C
hFE, DC CURRENT GAIN
25°C
100
- 55°C
V
CE
= 10 V
10
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
1000
Figure 3. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
-0.8
I
C
= -1.0 mA
-0.6
-10 mA
-100 mA
-500 mA
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2
-0.3 -0.5 -0.7 -1.0
I
B
, BASE CURRENT (mA)
-2.0
-3.0
-5.0 -7.0 -10
-20 -30
-50
Figure 4. Collector Saturation Region
300
200
100
70
50
30
20
t
d
@ V
BE(off)
= 0 V
10
7.0
5.0
3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
I
C
, COLLECTOR CURRENT
t
r
500
V
CC
= -30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
300
200
t
f
100
70
50
30
20
2.0 V
-200 -300 -500
10
7.0
5.0
-5.0 -7.0 -10
t′
s
= t
s
- 1/8 t
f
V
CC
= -30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
-20 -30
-50 -70 -100
-200 -300 -500
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
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3
MMBT2907AL, SMMBT2907AL
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
10
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
I
C
= -1.0 mA, R
s
= 430
W
-500
mA,
R
s
= 560
W
-50
mA,
R
s
= 2.7 kW
-100
mA,
R
s
= 1.6 kW
R
s
= OPTIMUM SOURCE RESISTANCE
NF, NOISE FIGURE (dB)
8.0
6.0
6.0
4.0
4.0
I
C
= -50
mA
-100
mA
-500
mA
-1.0 mA
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
0
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
R
s
, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
30
20
C, CAPACITANCE (pF)
C
eb
400
300
200
10
7.0
5.0
3.0
2.0
-0.1
C
cb
100
80
60
40
30
20
-1.0 -2.0
V
CE
= -20 V
T
J
= 25°C
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
−55°C
0.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.001
0.01
0.1
1
0.2
Figure 10. Current−Gain
−
Bandwidth Product
I
C
/I
B
= 10
−55°C
25°C
150°C
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
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4
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
MMBT2907AL, SMMBT2907AL
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0
150°C
25°C
−55°C
COEFFICIENT (mV/
°
C)
V
CE
= 1 V
+0.5
0
R
qVC
for V
CE(sat)
-0.5
-1.0
-1.5
-2.0
R
qVB
for V
BE
-5.0 -10 -20
-50 -100 -200 -500
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Base Emitter Voltage vs. Collector
Current
10
Figure 14. Temperature Coefficients
10 ms
1
Thermal Limit
IC (A)
0.1
100 ms
1s
1 ms
0.01
Single Pulse Test
@ T
A
= 25°C
0.01
0.1
1
V
CE
(Vdc)
10
100
0.001
Figure 15. Safe Operating Area
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