Ordering number : ENN7787
2SC5947
NPN Triple Diffused Planar Silicon Transistor
2SC5947
Switching Regulator Applications
Features
•
•
•
•
•
Package Dimensions
unit : mm
2069C
[2SC5947]
0.8
High breakdown voltage.
High reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
10.2
4.5
1.3
9.9
1.5max
8.8
3.0
2.55
1.2
2.55
1.35
1
0.8
2
3
0 to 0.3
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
PW≤300µs, Duty cycle≤10%
Tc=25°C
Conditions
2.55
2.55
2.7
Ratings
700
700
400
8
7
14
1.65
45
150
--55 to +150
1.4
Unit
V
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
VCB=400V, IE=0
VEB=5V, IC=0
Conditions
Ratings
min
typ
max
10
10
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63004KB TS IM TA-101157 No.7787-1/4
2SC5947
Continued from preceding page.
Parameter
Symbol
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
fT
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=5V, IC=0.8A
VCE=5V, IC=4A
VCE=5V, IC=1mA
IC=4A, IB=0.8A
IC=4A, IB=0.8A
VCE=10V, IC=0.8A
VCB=10V, f=1MHz
IC=1mA, IE=0
IC=5mA, RBE=∞
IE=1mA, IC=0
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
700
400
8
0.5
2.5
0.25
17
80
Ratings
min
20
10
10
0.8
1.5
V
V
MHz
pF
V
V
V
µs
µs
µs
typ
max
50
Unit
DC Current Gain
Collectoe-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=200V
RB
RL
10
IC -- VCE
mA
900mA
800
A
700mA 600m
Collector Current, IC -- A
8
7
6
5
4
IC -- VBE
VCE=5V
Collector Current, IC -- A
8
1000m
A
6
500mA
400mA
300mA
200mA
100mA
0
°
C
0
0.2
0.4
0.6
25
°
C
0.8
2
1
2
0
0
2
4
6
8
IB=0
10
IT03053
0
1.0
1.2
IT03054
Collector-to-Emitter Voltage, VCE -- V
100
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1.0
7
VCE(sat) -- IC
VCE=5V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IC / IB=5
Ta=120
°C
5
3
2
DC Current Gain, hFE
3
2
25
°C
--40
°
C
10
7
5
3
2
1.0
0.01
0.1
7
5
3
2
--40
°
C
25°C
°
C
20
=1
Ta
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10
IT03055
0.01
0.01
2
3
5 7 0.1
2
3
Ta=
12
4
3
5 7 1.0
--40
°
C
2
3
Collector Current, IC -- A
5 7 10
IT03056
No.7787-2/4
2SC5947
10
7
VBE(sat) -- IC
IC / IB=5
Switching Time, SW Time --
µs
10
7
5
3
2
SW Time -- IC
VCC=200V
IC / IB1=5, IB2 / IB1=2.5
R load
tstg
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
1.0
7
5
3
2
Ta= --40
°C
1.0
7
5
3
2
25
°
C
120
°C
tf
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Forward Bias A S O
ICP=14A
IC=7A
≤50µs
10
0
µ
s
Collector Current, IC -- A
5 7 10
IT03057
0.1
0.1
2
3
5
7
1.0
2
3
5
2
10
7
Reverse Bias A S O
ICP
Collector Current, IC -- A
10
IT03058
7
1m
Collector Current, IC -- A
Collector Current, IC -- A
DC
op
5
3
2
1.0
7
5
3
2
s
10
ms
S
/B
era
t
ion
m
Li
ite
d
0.01
1.0
Tc=25°C
Single pulse
2
3
5
7 10
2
3
5
7 100
2
3
5
0.1
1.0
Tc=25°C
IB2= --1.2A
L=500µH, Single pulse
2
3
5 7 10
2
3
5 7 100
2
3
Collector-to-Emitter Voltage, VCE -- V
2.0
1.8
IT06333
60
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
5 7 1000
IT03060
PC -- Tc
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
100
120
140
160
1.65
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
50
45
40
No
he
at
sin
k
30
20
10
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT06334
Case Temperature, Tc --
°C
IT06335
No.7787-3/4
2SC5947
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2004. Specifications and information herein are subject
to change without notice.
PS No.7787-4/4
微控制器 MCU
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