(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
J
E
AS
Value
Unit
V
45
20
40
400
−65 to +175
−55 to +150
150
3B
M4
A
A
A
°C
°C
mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
Symbol
R
θJC
Typ
−
Max
1.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 10 A, T
J
= 125°C)
(i
F
= 10 A, T
J
= 25°C)
(i
F
= 20 A, T
J
= 125°C)
(i
F
= 20 A, T
J
= 25°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
v
F
0.35
0.45
0.43
0.51
i
R
48
0.09
100
0.40
0.47
0.56
0.58
0.64
mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
MBR2045EMFS, NRVB2045EMFS
TYPICAL CHARACTERISTICS
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100.00
100.00
10.00
T
A
= 150°C
10.00
T
A
= 150°C
125°C
1.00
25°C
−40°C
0.10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.00
125°C
25°C
−40°C
0.10
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Voltage
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
0
10
20
30
40
T
A
= −40°C
T
A
= 150°C
T
A
= 125°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
0
Figure 2. Maximum Instantaneous Forward
Voltage
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= 25°C
T
A
= −40°C
5
10
15
20
25
30
35
40
45
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
60
55
50
45
40
35
30
25
20
15
10
5
0
0
10
20
30
40
0
20
40
60
80
100
120
140 160
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
R
qJC
= 1.6°C/W
1,000
100
10
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
MBR2045EMFS, NRVB2045EMFS
TYPICAL CHARACTERISTICS
8
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
7
6
5
4
3
2
SQUARE WAVE
1
0
0
1
2
3
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
DC
4
I
APK
/I
AV
= 5
I
APK
/I
AV
= 20
I
APK
/I
AV
= 10
Figure 7. Forward Power Dissipation
100
Duty Cycle = 50%
10
20%
10%
5%
2%
1%
0.1
R(t) (°C/W)
1
Assumes 25°C ambient and soldered to
a 600 mm
2
− oz copper pad on PCB
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
1
10
100
1000
Figure 8. Thermal Response
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4
MBR2045EMFS, NRVB2045EMFS
PACKAGE DIMENSIONS
2X
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
0.20 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
2X
D
2
D1
A
B
0.20 C
4X
E1
2
E
c
1
2
3
4
q
A1
TOP VIEW
3X
C
SEATING
PLANE
0.10 C
A
0.10 C
SIDE VIEW
8X
e
DETAIL A
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0
_
−−−
12
_
SOLDERING FOOTPRINT*
DETAIL A
3X
4X
b
e/2
1
4
1.270
0.750
4X
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10
0.05
C A B
c
L
0.965
K
E2
1.330
2X
1.000
0.905
4.530
0.475
2X
0.495
L1
M
3.200
PIN 5
(EXPOSED PAD)
G
D2
BOTTOM VIEW
4.560
2X
1.530
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone:
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