AUTOMOTIVE GRADE
AUIRLS3114Z
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Enhanced dv/dt and di/dt capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
40V
3.8m
4.9m
122A
56A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base part number
AUIRLS3114Z
Package Type
D
2
-Pak
S
G
D
2
Pak
AUIRLS3114Z
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLS3114Z
AUIRLS3114ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS (Tested)
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wirebond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
122
86
56
488
143
0.95
± 16
168
518
See Fig.15,16, 12a, 12b
2.3
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
1.05
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-6
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
gfs
R
G(Int)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Trans conductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
40
–––
–––
1.0
–––
103
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
AUIRLS3114Z
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.03 –––
V/°C Reference to 25°C, I
D
= 1mA
3.8
4.9
m V
GS
= 10V, I
D
= 56A
1.7
2.5
V
V = V
GS
, I
D
= 100µA
-6.6 ––– mV/°C
DS
––– –––
S
V
DS
= 10V, I
D
= 56A
0.8
–––
–––
20
V
DS
= 40V, V
GS
= 0V
µA
––– 250
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 16V
nA
––– -100
V
GS
= -16V
35
11
16
28
271
43
60
3617
633
345
2378
570
875
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 56A
nC
V
DS
= 20V
V
GS
= 4.5V
V
DD
= 20V
I
D
= 56A
ns
R
G
= 3.7
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
pF
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Units
A
–––
–––
33
32
488
1.3
50
48
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 56A,V
GS
= 0V
T
J
= 25°C ,I
F
= 56A, V
DD
= 20V
di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Typ. Max.
––– 122
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.107mH, R
G
= 50, I
AS
= 56A, V
GS
=10V. Part not recommended for use above this value.
I
SD
56A,
di/dt
263A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
2
2015-11-6
AUIRLS3114Z
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
175
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
150
125
100
75
100
T J = 25°C
T J = 175°C
10
T J = 25°C
1
VDS = 25V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
T J = 175°C
50
25
0
0
20
40
60
80
ID ,Drain-to-Source Current (A)
V DS = 10V
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
3
Fig. 4
Typical Forward Trans conductance
vs. Drain Current
2015-11-6
AUIRLS3114Z
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = Cds + Cgd
14.0
ID = 56A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS = 32V
VDS = 20V
VDS= 8V
C, Capacitance (pF)
10000
Ciss
C oss
Crss
1000
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
70
80
90
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100µsec
10msec
1msec
100
T J = 175°C
100
10
T J = 25°C
10
1
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
0.1
100
VDS , Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-11-6
AUIRLS3114Z
140
120
ID, Drain Current (A)
2.2
Wirebond Limitation
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID = 56A
VGS = 10V
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fg 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-11-6
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