The Si9986 is an integrated, buffered H-bridge with TTL
compatible inputs and the capability of delivering a
continuous 1 A at V
DD
= 12 V (room temperature) at
switching rates up to 200 kHz. Internal logic prevents the
upper and lower outputs of either half-bridge from being
turned on simultaneously. Unique input codes allow both
outputs to be forced low (for braking) or forced to a high
impedance level.
The Si9986 is available in both standard and lead (Pb)-free,
8-pin SOIC packages, specified to operate over a voltage
range of 3.8 V to 13.2 V, and the commercial temperature
range of 0 °C to 70 °C (C suffix) and the industrial
temperature range of - 40 °C to 85 °C (D suffix).
FEATURES
•
•
•
•
•
•
1 A H-bridge
200 kHz switching rate
Shoot-through limited
TTL compatible inputs
3.8 V to 13.2 V operating range
Surface mount packaging
Pb-free
Available
RoHS*
COMPLIANT
APPLICATIONS
•
•
•
•
•
•
•
VCM driver
Brushed motor driver
Stepper motor driver
Power converter
Optical disk drives
Power supplies
High performance servo
FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE
SO-8
S
A
GND
V
DD
S
B
1
2
3
4
Top View
8
OUT
A
IN
A
IN
B
OUT
B
IN
A
Shoot-Through
Protection Logic
(7)
(3)
V
DD
Si9986
7
6
5
TRUTH TABLE
IN
A
1
0
0
1
IN
B
0
1
0
1
OUT
A
1
0
0
HiZ
OUT
B
0
1
0
HiZ
GND
IN
B
(6)
(2)
(1)
S
A
(8)
(5)
OUTPUT
A
B
(4)
S
B
PIN DESCRIPTION
Pin
Number
1
2
3
4
5
6
7
8
Name
S
A
GND
V
DD
S
B
OUT
B
IN
B
IN
A
OUT
A
Function
Source of the low-side MOSFET on bridge arm A
Ground
IC power supply
Source of the low-side MOSFET on bridge arm B
Center tap of bridge arm B. Connects to one end
of the load
Input signal to control bridge arm B
Input signal to control bridge arm A
Center tap of bridge arm A. Connects to the other
end of the load
ORDERING INFORMATION
Part Number
Si9986CY-T1
Si9986DY-T1
Si9986CY-T1-E3
Si9986DY-T1-E3
Si9986CY
Si9986DY
Temperature
Range
0 °C to 70 °C
- 40 °C to 85 °C
0 °C to 70 °C
- 40 °C to 85 °C
0 °C to 70 °C
- 40 °C to 85 °C
Package
Tape and reel
Lead (Pb)-free
Tape and reel
Bulk (tubes)
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si9986
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
a
Parameter
Voltage on any Pin with Respect to Ground
Voltage on Pins 5, 8 with Respect to Ground
Voltage on Pins 1, 4
Peak Output Current
Storage Temperature
Maximum Junction Temperature (T
J
)
Maximum V
DD
Power Dissipation
b
Θ
JA
Operating Temperature Range
Notes:
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 10 mW/°C above 25 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Limit
- 0.3 to V
DD
+ 0.3
- 1 to V
DD
+ 1
- 0.3 to GND + 1
1.5
- 65 to 150
150
15
1
100
Si9986CY
Si9986DY
0 to 70
- 45 to 85
Unit
V
A
°C
V
W
°C/W
°C
RECOMMENDED OPERATING RANGE
Parameter
V
DD
Maximum Junction Temperature (T
J
)
Limit
3.8 to 13.2
125
Unit
V
°C
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
V
DD
= 3.8 to 13.2 V
S
A
at GND, S
B
at GND
Limits
C Suffix, 0 °C to 70 °C
D Suffix, - 40 °C to 85 °C
Min
a
2
V
IN
= 2 V
V
IN
= 0 V
V
DD
= 10.8 V
V
DD
= 4.5 V
I
OUT
= - 300 mA, V
DD
= 3.8 V
V
DD
= 10.8 V
I
OUT
= 500 mA
V
DD
= 4.5 V
I
OUT
= 300 mA, V
DD
= 3.8 V
IN
A
= IN
B
≥
2 V, V
OUT
= V
DD
= 13.2 V
V
OUT
= 0, V
DD
= 13.2 V
I
OUT
= 100 mA
IN
A
= IN
B
≥
2 V
I
OUT
= - 100 mA
IN = 100 kHz, V
DD
= 5 V
IN
A
= IN
B
= 4.5 V, V
DD
= 5.5 V
1
1
-1
10.5
4.1
3.4
10.7
4.3
3.7
0.2
0.2
0.1
0
0
V
DD
+ 0.7
- 0.7
2
300
300
100
Typ
b
Max
a
Unit
Parameter
Input
Input Voltage High
Input Voltage Low
Input Current with Input Voltage High
Input Current with Input Voltage Low
Output
Output Voltage High
Symbol
V
INH
V
INL
I
INH
I
INL
V
µA
V
OUTH
I
OUT
= - 500 mA
Output Voltage Low
Output Leakage Current High
Output Leakage Current Low
Output V Clamp High
Output V Clamp Low
Supply
V
DD
Supply Current
Dynamic
Propogation Delay Time
V
OUTL
I
OLH
I
OLL
V
CLH
V
CLL
0.3
0.4
0.4
10
V
- 10
µA
V
I
DD
mA
µA
T
PLH
T
PHL
V
DD
= 5 V
nS
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
www.vishay.com
2
Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si9986
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
V
DD
= 13.2 V
600
12
500
9
VOUTL (mV)
VOUTH (V)
400
300
200
100
0
0.50
0
0.50
5.5 V
700
V
DD
= 3.8 V
13.2 V
6
5.5 V
3.8 V
3
0.75
1.00
Output Current (A)
1.25
1.50
0.75
1.00
Output Current (A)
1.25
1.50
Output High Voltage vs. Output Current
140
6
Output Low Voltage vs. Output Current
f = 100 kHz
120
5
I DD - Standby (µ A)
4
I DD (mA)
100
3
80
2
60
1
40
4
6
8
10
12
14
0
4
6
8
10
12
14
V
DD
- Supply Voltage (V)
V
DD
- Supply Voltage (V)
Supply Current vs. Supply Voltage
200
180
160
I DD
-
Standby (µ A)
140
120
100
5.5 V
80
60
- 35
0
- 35
I DD (mA)
V
DD
= 13.2 V
6
8
Supply Current vs. Supply Voltage
f = 100 kHz
V
DD
= 13.2 V
4
5.5 V
2
- 20
-5
10
25
40
55
70
85
- 20
-5
10
25
40
55
70
85
Temperature (°C)
Temperature (°C)
Supply Current vs. Temperature
Supply Current vs. Temperature
Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si9986
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
600
12
Delay Time (ns)
V
DD
= 13.2 V
I DD (mA)
9
500
400
300
T
PLH
6
200
T
PHL
3
5.5 V
100
3.8 V
0
0
50
100
f - Frequency (kHz)
150
200
0
3
6
9
V
DD
- Supply Voltage (V)
12
15
Supply Current vs. Frequency
Propagation Time vs. Supply Voltage
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?70007.
www.vishay.com
4
Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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