MOSFET N-Ch DTMOS VII-H 1.9W 1050pF 19A 30V
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Toshiba(东芝) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOP-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 19 A |
Rds On - Drain-Source Resistance | 7 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.3 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 17 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single Quad Drain |
Pd-功率耗散 Pd - Power Dissipation | 1.9 W |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
高度 Height | 1.68 mm |
长度 Length | 4.9 mm |
Transistor Type | 1 N-Channel |
宽度 Width | 3.9 mm |
Fall Time | 3.5 ns |
Rise Time | 4 ns |
工厂包装数量 Factory Pack Quantity | 2500 |
Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 11 ns |
单位重量 Unit Weight | 0.030018 oz |
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