T H AT
Corporation
FEATURES
·
·
·
Two Matched NPN Transistors
Two Matched PNP Transistors
Monolithic Construction
Low Noise
— 0.75
nV
/
Hz
(PNP)
— 0.8
nV
/
Hz
(NPN)
High Speed
— f
t
= 350 MHz (NPN)
— f
t
= 325 MHz (PNP)
Excellent Matching - 500
mV
typ
Dielectrically Isolated
25 V V
CEO
·
·
·
·
·
·
Quad Low-Noise
NPN / PNP Transistor Array
THAT140
APPLICATIONS
Microphone Preamplifiers
Tape Head Preamplifiers
Current Sources
Current Mirrors
Log/Antilog Amplifiers
Multipliers
·
·
·
·
DESCRIPTION
THAT140 is a quad, large-geometry monolithic
NPN/PNP transistor array which combines low noise,
high speed and excellent parametric matching. The
large geometries typically result in 25
W
base spread-
ing resistance for the PNP devices (30
W
for the
NPNs), producing 0.75
nV Hz
voltage noise (0.8
nV
Hz
for the NPNs). This makes these parts an
The resulting low collector-to-substrate capacitance
produces a typical NPN f
t
of 350 MHz, 325 Mhz for
the PNPs. This delivers AC performance similar to
discrete 2N3904- and 2N3906-class devices.
Dielectric isolation also minimizes crosstalk and
provides complete DC isolation.
Substrate biasing is not required for normal oper-
ation, though the substrate should be grounded to
optimize speed. The monolithic construction assures
excellent parameter matching and tracking over tem-
perature.
ideal choice for low-noise amplifier input stages.
Fabricated on a Complementary Bipolar Dielec-
trically Isolated process, all four transistors are elec-
trically isolated from each other by a layer of oxide.
14
13
Q2
Q1
1
2
12
11
NC
10
9
Q4
8
Q3
3
4
5
6
SUB
7
Figure 1. Pin Configuration
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Rev. 11/29/00
Page 2
SPECIFICATIONS
1
Maximum Ratings (T
A
= 25°C)
Parameter
NPN Collector-Emitter Voltage
NPN Collector-Base Voltage
NPN Emitter-Base Voltage
NPN Collector Current
NPN Emitter Current
PNP Collector-Emitter Voltage
PNP Collector-Base Voltage
PNP Emitter-Base Voltage
PNP Collector Current
PNP Emitter Current
Collector-Collector Voltage
Emitter-Emitter Voltage
Operating Temperature Range
Maximum Junction Temperature
Storage Temperature
Symbol
BV
CEO
BV
CBO
BV
EBO
I
C
I
E
BV
CEO
BV
CBO
BV
EBO
I
C
I
E
BV
CC
BV
EE
T
A
T
JMAX
T
STORE
-45
I
C
= 1 mAdc, I
B
= 0
I
C
= 10
mAdc,
I
E
= 0
I
E
= 10
mAdc,
I
C
= 0
Conditions
I
C
= 1 mAdc, I
B
= 0
I
C
= 10
mAdc,
I
E
= 0
I
E
= 10
mAdc,
I
C
= 0
Min
25
25
5
10
10
-25
-25
-5
-10
-10
±100
±100
0
Typ
35
35
¾
20
20
-40
-40
¾
-20
-20
±200
±200
¾
¾
70
150
125
¾
¾
¾
Max
¾
¾
¾
Units
V
V
V
mA
mA
V
V
V
mA
mA
V
V
°C
°C
°C
0.750±0.004
(19.05±0.10)
0.050
(1.27)
Typ
0.25±.004
(6.35±0.10)
1
0.060
(1.52)
Typ.
0.32 Max.
(8.13)
0.125±0.004
(3.18±0.10)
0.157 0.245
(3.99) (6.2)
Max Max
1
0.018 (0.46)
Max
0.10 Typ.
(2.54)
0.075
(1.91)
0.018
(0.46)
0.010
(0.25)
0.344 (8.74)
Max
0.069
(1.75)
Max
0.010
(0.25)
Max
Figure 2. Dual-In-Line Package Outline
Figure 3. Surface Mount Package Outline
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Page 3
THAT140 Transistor Array
Electrical Characteristics
2
Parameter
NPN Current Gain
Symbol
h
fe
Conditions
V
CB
= 10 V
I
C
= 1 mA
I
C
= 10
mA
NPN Current Gain Matching
NPN Noise Voltage Density
NPN Gain-Bandwidth Product
NPN
DV
BE
(V
BE1
-V
BE2
)
Dh
fe
e
N
f
t
V
OS
V
CB
= 10 V, I
C
= 1 mA
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
I
C
= 1 mA, V
CB
= 10 V
I
C
= 1 mA
I
C
= 10
mA
NPN
DI
B
(I
B1
-I
B2
)
I
OS
I
C
= 1 mA
I
C
= 10
mA
NPN Collector-Base
Leakage Current
NPN Bulk Resistance
NPN Base Spreading Resistance
NPN Collector Saturation Voltage
NPN Output Capacitance
NPN Collector-Collector
Capacitance (Q
1
-Q
2
)
PNP Current Gain
C
CC
h
fe
V
CC
= 0 V, 100 kHz
V
CB
= 10 V
I
C
= 1 mA
I
C
= 10
mA
PNP Current Gain Matching
PNP Noise Voltage Density
PNP Gain-Bandwidth Product
PNP
DV
BE
(V
BE3
-V
BE4
)
Dh
fe
e
N
f
t
V
OS
V
CB
= 10 V, I
C
= 1 mA
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
I
C
= 1 mA, V
CB
= 10 V
I
C
= 1 mA
I
C
= 10
mA
PNP
DI
B
(I
B3
-I
B4
)
I
OS
I
C
= 1 mA
I
C
= 10
mA
PNP Collector-Base
Leakage Current
PNP Bulk Resistance
PNP Base Spreading Resistance
PNP Collector Saturation Voltage
PNP Output Capacitance
PNP Collector-Collector
Capacitance (Q
3
-Q
4
)
C
CC
V
CC
= 0 V, 100 kHz
0.6
pF
I
CBO
r
BE
r
bb
V
CE(SAT)
C
OB
V
CB
= 25 V
V
CB
= 0 V, 10mA < I
C
< 10mA
V
CB
= 10 V, I
C
= 1mA
I
C
= 1 mA, I
B
= 100
mA
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
—
—
—
—
-25
2
25
-0.05
3
—
—
—
pA
W
W
V
pF
—
—
—
—
50
50
—
—
75
75
5
0.75
325
±0.5
±0.5
±700
±7
±3
±3
±1800
±18
¾
¾
—
—
%
nV / Hz
MHz
mV
mV
nA
nA
0.7
pF
I
CBO
r
BE
r
bb
V
CE(SAT)
C
OB
V
CB
= 25 V
V
CB
= 0 V, 10mA < I
C
< 10mA
V
CB
= 10 V, I
C
= 1mA
I
C
= 1 mA, I
B
= 100
mA
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
—
—
—
—
25
2
30
0.05
3
—
—
—
pA
W
W
V
pF
—
—
—
—
60
60
—
—
100
100
5
0.8
350
±0.5
±0.5
±500
±5
±3
±3
±1500
±15
¾
¾
—
—
%
nV / Hz
MHz
mV
mV
nA
nA
Min
Typ
Max
Units
1. All specifications subject to change without notice.
2. Unless otherwise noted, T
A
=25°C.
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Rev. 11/29/00
Page 4
Notes
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
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