OM6001ST OM6003ST OM6101ST OM6103ST
OM6002ST OM6004ST OM6102ST OM6104ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Bi-Lateral Zener Gate Protection (Optional)
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6101ST series.
MAXIMUM RATINGS
PART NUMBER
OM6001ST/OM6101ST
OM6002ST/OM6102ST
OM6003ST/OM6103ST
OM6004ST/OM6104ST
Note:
V
DS
100 V
200 V
400 V
500 V
R
DS(on)
.20
.44
1.05
1.60
I
D
14 A
9A
5.5 A
4.5 A
3.1
OM6101ST thru OM6104ST is supplied with zener gate protection.
OM6001ST thru OM6004ST is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6001ST - 6004ST
1 - DRAIN
WITH ZENER CLAMPS
OM6101ST - 6104ST
1 - DRAIN
3 - GATE
3 - GATE
ZENERS
2 - SOURCE
2 - SOURCE
4 11 R4
Supersedes 1 07 R3
3.1 - 71
3.1
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6102ST / OM6002 ST (200V)
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Current
0.2
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A,
T
C
= 125 C
Current
1
9.0
1.25
0.44
0.88
2.2
V
A
1.0
mA
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
On-State Drain
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Gate-Body Leakage (OM6002)
± 100
nA
V
GS
= ± 20 V
Gate-Body Leakage (OM6102)
± 500
nA
V
GS
= ± 12.8 V
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
mA
200
I
D
= 250
mA
V
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
STATIC P/N OM6101ST / OM6001ST (100V)
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 8 A,
T
C
= 125 C
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
Voltage
100
V
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
OM6001ST - OM6104ST
I
GSS
Gate-Body Leakage (OM6101)
± 500
nA
I
GSS
Gate-Body Leakage (OM6001)
± 100
nA
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
I
D(on)
On-State Drain
Current
1
14
A
V
DS(on)
Static Drain-Source On-State
Voltage
1
1.2
1.60
V
R
DS(on)
Static Drain-Source On-State
Resistance
1
0.20
R
DS(on)
Static Drain-Source On-State
Resistance
1
0.40
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Fall Time
Turn-Off Delay Time
45
27
Rise Time
18
Turn-On Delay Time
9
Reverse Transfer Capacitance
55
pF
ns
ns
ns
ns
Output Capacitance
150
pF
Input Capacitance
780
pF
Forward Transductance
1
3.0
5.8
(W )
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
8 A
R
g
= 7.5
W
, V
DS
= 10 V
V
GS
= 0
DYNAMIC
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5.0 A
V
DS
= 25 V
f = 1 MHz
V
DD
= 75V, I
D
@
5.0 A
R
g
= 7.5
W
, V
GS
=10 V
3.1 - 72
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
g
fs
Forward
Transductance
1
4.0
S(W
)
V
DS
2 V
DS(on)
, I
D
= 8 A
C
iss
Input Capacitance
750
pF
C
oss
Output Capacitance
250
pF
C
rss
Reverse Transfer Capacitance
100
pF
t
d(on)
Turn-On Delay Time
15
ns
t
r
Rise Time
35
ns
t
d(off)
Turn-Off Delay Time
38
ns
t
f
Fall Time
23
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
G
I
S
(Body Diode)
I
SM
S
Continuous Source Current
the integral P-N
Junction rectifier.
(Body Diode)
Source
(Body Diode)
V
SD
V
SD
t
rr
Diode Forward Voltage
1
Diode Forward Voltage
1
Reverse Recovery Time
Current
1
- 14
A
I
SM
T
C
= 25 C, I
S
= -14 A, V
GS
= 0
T
C
= 25 C, I
S
= -12 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
Source
Current
1
(Body Diode)
- 56
A
V
SD
Diode Forward Voltage
1
V
SD
Diode Forward Voltage
1
- 2.5
- 2.5
V
V
t
rr
Reverse Recovery Time
100
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
I
S
Continuous Source Current
-9
A
- 36
-2
-2
250
A
V
V
ns
Modified MOSPOWER
symbol showing
G
D
the integral P-N
Junction rectifier.
S
T
C
= 25 C, I
S
= -9 A, V
GS
= 0
T
C
= 25 C, I
S
= -8 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6104ST / OM6004ST (500V)
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Current
0.2
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A,
T
C
= 125 C
4.5
3.25 4.00
1.6
2.9
3.3
V
A
1.0
mA
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
On-State Drain Current
1
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Gate-Body Leakage (OM6004)
± 100
nA
V
GS
= ± 20 V
Gate-Body Leakage (OM6104)
± 500
nA
V
GS
= ± 12.8 V
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
mA
500
I
D
= 250
mA
V
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
STATIC P/N OM6103ST / OM6003ST (400V)
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.0 A
V
GS
= 10 V, I
D
= 3.0 A
V
GS
= 10 V, I
D
= 3.0 A,
T
C
= 125 C
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
Voltage
400
V
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
I
GSS
Gate-Body Leakage (OM6103)
± 500
nA
I
GSS
Gate-Body Leakage (OM6003)
± 100
nA
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
I
D(on)
On-State Drain Current
1
5.5
A
V
DS(on)
Static Drain-Source On-State
Voltage
1
2.4
3.15
V
R
DS(on)
Static Drain-Source On-State
Resistance
1
1.05
R
DS(on)
Static Drain-Source On-State
Resistance
1
2.0
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Fall Time
Turn-Off Delay Time
42
25
Rise Time
20
Turn-On Delay Time
18
Reverse Transfer Capacitance
30
Output Capacitance
90
pF
pF
ns
ns
ns
ns
Input Capacitance
700
pF
Forward Transductance
1
2.5
2.8
(W )
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
@
3.0 A
R
g
= 10
W
,V
GS
= 10 V
DYNAMIC
S(W
)
V
DS
2 V
DS(on)
, I
D
= 2.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 225 V, I
D
@
2.5 A
R
g
= 7.5
W
, V
GS
= 10 V
3.1 - 73
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
g
fs
Forward
Transductance
1
3.0
3.6
S(W
)
V
DS
2 V
DS(on)
, I
D
= 3.0 A
C
iss
Input Capacitance
700
pF
C
oss
Output Capacitance
70
pF
C
rss
Reverse Transfer Capacitance
20
pF
t
d(on)
Turn-On Delay Time
18
ns
t
r
Rise Time
20
ns
t
d(off)
Turn-Off Delay Time
40
ns
t
f
Fall Time
25
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
G
I
S
(Body Diode)
I
SM
S
Continuous Source Current
the integral P-N
Junction rectifier.
(Body Diode)
Source Current
1
(Body Diode)
V
SD
V
SD
t
rr
Diode Forward Voltage
1
Diode Forward Voltage
1
Reverse Recovery Time
- 5.5
A
I
SM
T
C
= 25 C, I
S
= -5.5 A, V
GS
= 0
T
C
= 25 C, I
S
= -4.5 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
Source Current
1
(Body Diode)
- 22
A
V
SD
Diode Forward Voltage
1
V
SD
Diode Forward Voltage
1
- 1.6
- 2.5
V
V
t
rr
Reverse Recovery Time
470
ns
OM6001ST - OM6104ST
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
I
S
Continuous Source Current
- 4.5
- 18
- 1.4
-2
430
A
A
V
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -4.5 A, V
GS
= 0
T
C
= 25 C, I
S
= -4 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OM6001ST - OM6104ST
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Junction To Ambient
T
J
T
stg
Lead Temperature
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Linear Derating Factor
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150
300
-55 to 150
300
-55 to 150
300
°C
°C
OM6001ST OM6002ST OM6003ST OM6004ST
Units
OM6101ST OM6102ST OM6103ST OM6104ST
100
100
±14
±9
±56
50
20
0.4
.015
200
200
±9
±6
±36
50
20
0.4
.015
400
400
±5.5
±3.5
±22
50
20
0.4
.015
500
500
±4.5
±3
±18
50
20
0.4
.015
V
V
A
A
A
W
W
W/°C
W/°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitations
= 16 amps
THERMAL RESISTANCE (MAXIMUM) at T
A
= 25°C
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
2.5
65
°C/W
°C/W Free Air Operation
POWER DERATING
P
D
- POWER DISSIPATION (WATTS)
90
75
60
45
30
Rθ
JC
= 2.5° C/W
MECHANICAL OUTLINE
WITH PIN CONNECTION
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
.430
.410
.038 MAX.
3.1
.150
.140
1 2 3
15
0
0
25
50
75 100 125 150 175
T
C
- CASE TEMPERATURE (C°)
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.750
.500
.005
.035
.025
.100 TYP.
.120 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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