MOSFET BUK9K134-100E/LFPAK56D/REEL 7
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | NXP(恩智浦) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | LFPAK56D-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V, 100 V |
Id - Continuous Drain Current | 8.5 A, 8.5 A |
Rds On - Drain-Source Resistance | 127 mOhms, 127 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.4 V, 1.4 V |
Vgs - Gate-Source Voltage | 10 V, 10 V |
Qg - Gate Charge | 7.4 nC, 7.4 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
Configuration | Dual |
Pd-功率耗散 Pd - Power Dissipation | 32 W |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
Transistor Type | 2 N-Channel |
Fall Time | 10.3 ns, 10.3 ns |
Rise Time | 11.3 ns, 11.3 ns |
工厂包装数量 Factory Pack Quantity | 1500 |
Typical Turn-Off Delay Time | 12 ns, 12 ns |
Typical Turn-On Delay Time | 6.2 ns, 6.2 ns |
单位重量 Unit Weight | 0.003524 oz |
BUK9K134-100EX | BUK7K17-60EX | BUK9K32-100EX | BUK7K12-60EX | BUK7K45-100EX | BUK7K89-100EX | |
---|---|---|---|---|---|---|
描述 | MOSFET BUK9K134-100E/LFPAK56D/REEL 7 | MOSFET BUK7K17-60E/LFPAK56D/REEL 7" Q | MOSFET Dual N-channel 100 V | MOSFET Dual N-channel 60V Mosfet | MOSFET BUK7K45-100E/LFPAK56D/REEL 7 | MOSFET BUK7K89-100E/LFPAK56D/REEL 7 |
Product Attribute | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value |
制造商 Manufacturer |
NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
产品种类 Product Category |
MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET |
技术 Technology |
Si | Si | Si | Si | Si | Si |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
封装 / 箱体 Package / Case |
LFPAK56D-8 | LFPAK33-5 | LFPAK33-5 | LFPAK33-5 | LFPAK56D-8 | LFPAK56D-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V, 100 V | 60 V | 100 V | 60 V | 100 V, 100 V | 100 V, 100 V |
Id - Continuous Drain Current | 8.5 A, 8.5 A | 30 A | 26 A | 40 A | 21.4 A, 21.4 A | 13 A, 13 A |
Rds On - Drain-Source Resistance | 127 mOhms, 127 mOhms | 12 mOhms | 26.6 mOhms | 9.3 mOhms | 30 mOhms, 30 mOhms | 61 mOhms, 61 mOhms |
Configuration | Dual | Dual | Dual | Dual | Dual | Dual |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel | 2 N-Channel | 2 N-Channel | 2 N-Channel |
工厂包装数量 Factory Pack Quantity |
1500 | 1500 | 1500 | 1500 | 1500 | 1500 |
RoHS | Details | - | Details | Details | Details | Details |
Vgs th - Gate-Source Threshold Voltage | 1.4 V, 1.4 V | - | 1.7 V | 3 V | 2.4 V, 2.4 V | 2.4 V, 2.4 V |
Vgs - Gate-Source Voltage | 10 V, 10 V | - | 15 V | 20 V | 20 V, 20 V | 20 V, 20 V |
Qg - Gate Charge | 7.4 nC, 7.4 nC | - | 27.3 nC | 34.2 nC | 25.9 nC, 25.9 nC | 13.6 nC, 13.6 nC |
最小工作温度 Minimum Operating Temperature |
- 55 C | - | - 55 C | - 55 C | - 55 C | - 55 C |
最大工作温度 Maximum Operating Temperature |
+ 175 C | - | + 175 C | + 175 C | + 175 C | + 175 C |
Pd-功率耗散 Pd - Power Dissipation |
32 W | - | 64 W | 68 W | 53 W | 38 W |
Channel Mode | Enhancement | - | Enhancement | Enhancement | Enhancement | Enhancement |
系列 Packaging |
Reel | Reel | Reel | Reel | Reel | Reel |
Fall Time | 10.3 ns, 10.3 ns | - | 23.1 ns | 15 ns | 13.9 ns, 13.9 ns | 7.3 ns, 7.3 ns |
Rise Time | 11.3 ns, 11.3 ns | - | 22 ns | 12.5 ns | 11.2 ns, 11.2 ns | 5.9 ns, 5.9 ns |
Typical Turn-Off Delay Time | 12 ns, 12 ns | - | 39.5 ns | 23 ns | 20.3 ns, 20.3 ns | 12 ns, 12 ns |
Typical Turn-On Delay Time | 6.2 ns, 6.2 ns | - | 12.6 ns | 9.1 ns | 6.2 ns, 6.2 ns | 4.6 ns, 4.6 ns |
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