Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
SGS5N150UF
IGBT
SGS5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor
(IGBT)
provides low conduction and switching losses.
SGS5N150UF is designed for the Switching Power
Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : V
CE(sat)
= 4.7 V @ I
C
= 5A
• High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
C
G
TO-220F
G C
E
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGS5N150UF
1500
±
20
10
5
20
50
20
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
2.5
62.5
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
SGS5N150UF
80
20 V
70
15 V
60
50
40
Tc = 25℃
Tc = 100℃
50
Vge=10V
10 V
Ic [A]
40
30
20
Ic [A]
Vge=5 V
30
20
10
10
0
0
5
10
15
0
20
0
4
8
12
16
20
Vce [V]
Vce [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
8.0
Vge = 10V
7.5
Vge=10V
10
7.0
8
6.5
Vce(sat) [V]
Ic =10A
Ic [A]
6
6.0
5.5
5.0
4
2
4.5
0
25
50
75
100
125
150
4.0
20
40
60
80
100
Ic = 5A
120
140
Tc [℃]
Tc [℃]
Fig 3. Maximum Collector Current vs.
Case Temperature
Fig 4. Saturation Voltage vs.
Case Temperature
10
Vcc = 600V
Load Current : peak of square wave
10
Thermal Response [Zthjc]
8
0.5
1
0.2
0.1
0.05
0.1
Pdm
Load Current [A]
6
4
0.02
0.01
t1
t2
2
Duty cycle : 50%
Tc = 100 C
Power Dissipation = 12W
0
0.1
1
10
100
1000
o
single pulse
0.01
1E-5
1E-4
1E-3
0.01
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
0.1
1
10
Frequency [kHz]
Rectangular Pulse Duration [sec]
Fig 5. Load Current vs. Frequency
Fig 6. Transient Thermal Impedance
of IGBT Junction to Case
SGS5N150UF Rev. B
©2003 Fairchild Semiconductor Corporation
SGS5N150UF
1200
10
1000
Common Emitter
R
L
= 120
Ω
, V
CC
= 600V
T
C
= 25 C
o
[V]
800
Cies
8
Capacitance [pF]
Gate - Emitter Voltage, V
GE
6
600
400
4
200
Coes
0
1
Cres
10
2
0
0
10
20
30
Vce [V]
Gate Charge, Qg [nC]
Fig 7. Typical Capacitance vs.
Collector to Emitter Voltage
600
Vcc = 600V
Ic = 5A
500
Esw
Fig 8. Typical Gate Charge Characteristic
1200
Vcc = 600V
Rg = 10
Ω
Vge = 10V
1000
Ic = 10A
Energy [uJ]
Eon
300
Energy [uJ]
400
800
600
Ic = 5A
200
Eoff
400
Ic = 3A
100
0
5
10
15
20
25
30
200
20
40
60
80
100
Rg [
Ω
]
Tc [
℃
]
Fig 9. Typical Switching Loss vs.
Gate Resistance
1.2
Vcc = 600V
Rg = 10
Ω
Tc = 100℃
1.0
Esw
Fig 10. Typical Switching Loss vs.
Case Temperature
10
0.8
Energy [mJ]
0.6
Eon
Eoff
0.4
Safe Operating Area
Vge = 20V, Tc = 100℃
1
4
6
8
10
1
10
100
1000
0.2
Ic [A]
Ic [A]
Vce [V]
Fig 11. Typical Switching Loss vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off SOA
SGS5N150UF Rev. B
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
