BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Value
60
90
140
60
100
200
10
6
Unit
V
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
Stg
Collector-Base Voltage
V
V
A
A
Watts
Emitter-Base Voltage
Collector Current
Base Current
3
Power Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
87.5
200
-65 to +200
°C
COMSET SEMICONDUCTORS
1/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
BDY23, 180T2
Min Typ Mx Unit
60
90
140
60
100
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
mA
V
V
V
CEO(BR)
I
C
=50 mA, I
B
=0
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
V
(BR)CBO
Collector-Base Breakdown
Voltage (*)
Collector-Emitter Cutoff
Current
I
C
=3 mA
V
CE
=60 V
V
CE
=90 V
V
CE
=140 V
BDY24, 181T2
BDY25, 182T2
BDY23
BDY24
BDY25
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
I
CEO
-
-
-
-
I
EBO
Emitter-Base Cutoff Current
V
EB
=10 V
1.0
mA
V
CE
=60 V
V
BE
=0 V
-
-
0.5
I
CES
Collector-Emitter Cutoff
Current
V
CE
=100 V
V
BE
=0 V
V
CE
=180 V
V
BE
=0 V
BDY24, 181T2
-
-
1.0
mA
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
-
-
-
-
-
-
-
1.0
1
0.6
0.6
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
V
COMSET SEMICONDUCTORS
2/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
Symbol
V
BE(SAT)
Ratings
Base-Emitter Voltage (*)
Test Condition(s)
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
A
B
C
A
B
C
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Min Typ Mx Unit
-
-
-
-
-
-
I
C
=2.0 A, I
B
=0.25 A
-
-
-
55
65
90
20
45
82
-
2.0
1.2
1.2
-
-
-
45
90
100
-
V
V
CE
=4 V, I
C
=1 A
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=2 A
15
30
75
10
-
f
T
Transition Frequency
V
CE
=15 V, I
C
=0.5 A,
f=10 MHz
MHz
t
d
+ t
r
Turn-on time
I
C
=5 A,
I
B
=1 A
I
C
=5 A,
I
B1
=1 A,
I
B2
=-0.5 A
-
0.3
0.5
µs
t
s
+ t
f
Turn-off time
-
1.5
2.0
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
COMSET SEMICONDUCTORS
3/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm inches
25,45
1
38,8
1,52
30,09 1,184
17,11
0,67
9,78
0,38
11,09
0,43
8,33
0,32
1,62
0,06
19,43
0,76
1
0,04
4,08
0,16
Base
Collector
Emitter
COMSET SEMICONDUCTORS
4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
