25ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
DESCRIPTION/FEATURES
Base
cathode
2
The 25ETS..S rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product series has been designed and qualified for
industrial level.
D
2
PAK
1
Anode
3
Anode
PRODUCT SUMMARY
V
F
at 10 A
I
FSM
V
RRM
<1V
300 A
800/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
20
THREE-PHASE BRIDGE
23
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
25
800/1200
300
1.0
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
25ETS08S
25ETS12S
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 106 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
25
250
300
316
442
4420
A
2
s
A
2
√s
A
UNITS
Document Number: 93505
Revision: 20-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
25ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
25 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.14
9.62
0.87
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style D
2
PAK (SMD-220)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
0.9
62
0.5
2
0.07
6 (5)
12 (10)
25ETS08S
25ETS12S
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93505
Revision: 20-Aug-08
25ETS..S High Voltage Series
Input Rectifier Diode, 25 A
Vishay High Power Products
150
60
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
Maximum Average Forward
Power Loss (W)
25ETS..S Series
R
thJC
(DC) = 0.9 K/W
50
40
30
Ø
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
20
10
0
Ø
30°
60°
90°
120°
180°
Conduction period
25ETS..S Series
T
J
= 150 °C
0
10
20
30
40
0
5
10
15
20
25
30
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300
Maximum Allowable Case
Temperature (°C)
140
130
120
110
25ETS..S Series
R
thJC
(DC) = 0.9 K/W
Peak Half Sine Wave
Forward Current (A)
At any rated load condition and with
rated V
RRM
applied following surge.
200
Ø
Conduction period
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
100
30°
100
90
60°
90°
120°
180°
30
25ETS..S Series
DC
35
40
0
0
5
10
15
20
25
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulsed (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
40
Maximum Average Forward
Power Loss (W)
35
30
25
20
15
RMS limit
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
300
200
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Ø
100
10
5
0
Conduction angle
25ETS..S Series
T
J
= 150 °C
0
5
10
15
20
25
30
25ETS..S Series
0
0.01
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93505
Revision: 20-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
25ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
Instantaneous Forward Current (A)
1000
T
J
= 25 °C
100
T
J
= 150 °C
10
25ETS.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
25ETS. .Series
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93505
Revision: 20-Aug-08
25ETS..S High Voltage Series
Input Rectifier Diode, 25 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
25
1
1
2
3
4
5
6
7
-
-
E
2
T
3
S
4
12
5
S
6
TRL
7
-
8
Current rating (25 = 25 A)
Circuit configuration:
E = Single diode
-
Package:
T = TO-220AC
-
-
-
-
Type of silicon:
S = Standard recovery rectifier
Voltage ratings
S = TO-220 D
2
PAK (SMD-220) version
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
08 = 800 V
12 = 1200 V
8
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
http://www.vishay.com/doc?95046
http://www.vishay.com/doc?95054
http://www.vishay.com/doc?95032
Document Number: 93505
Revision: 20-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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