c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on T
C
= 25 °C.
g. Package limited.
S15-2185-Rev. A, 14-Sep-15
Document Number: 74712
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS626DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t
p
= 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A, V
GS
= 0 V
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.72
20
12
10
10
16
32
1.1
40
25
-
-
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
1925
305
135
39.5
18.2
3.8
3.6
1.4
14
20
38
14
7
17
25
8
-
-
-
60
27.5
-
-
2.5
28
40
78
28
14
34
50
16
ns
Ω
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on
)
g
fs
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 7 A
V
GS
= 2.5 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 10 A
25
-
-
0.6
-
-
-
30
-
-
-
-
-
30
-4
-
-
-
-
-
0.0071
0.0080
0.0092
68
-
-
-
1.4
± 100
1
10
-
0.0090
0.0096
0.0115
-
S
Ω
V
mV/°C
V
nA
μA
A
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2185-Rev. A, 14-Sep-15
Document Number: 74712
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS626DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 3 V
56
40
50
Vishay Siliconix
I
D
- Drain Current (A)
42
V
GS
= 2 V
I
D
- Drain Current (A)
30
T
C
= 25
°C
20
28
14
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
2.5
10
T
C
= 125
°C
0
0.0
T
C
= -55
°C
0.6
1.2
1.8
2.4
V
GS
-
Gate-to-Source
Voltage (V)
3.0
Output Characteristics
Transfer Characteristics
0.011
2500
C
iss
0.010
R
DS(on)
- On-Resistance (Ω)
V
GS
= 2.5 V
C - Capacitance (pF)
2000
0.009
1500
0.008
V
GS
= 4.5 V
V
GS
= 10 V
1000
C
oss
500
C
rss
0.007
0.006
0
10
20
30
I
D
- Drain Current (A)
40
50
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
I
D
= 10 A
1.7
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 10 V
4
1.4
V
DS
= 20 V
1.1
V
GS
= 4.5 V
2
0.8
0
0
8
16
24
Q
g
- Total
Gate
Charge (nC)
32
40
0.5
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-2185-Rev. A, 14-Sep-15
On-Resistance vs. Junction Temperature
Document Number: 74712
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS626DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.4
Vishay Siliconix
10
I
S
-
Source
Current (A)
V
GS(th)
- Variance (V)
0.2
T
J
= 150
°C
1
T
J
= 25 °C
0
I
D
= 5 mA
-0.2
0.1
0.01
-0.4
I
D
= 250 μA
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
-0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.05
I
D
= 10 A
0.04
R
DS(on)
- On-Resistance (Ω)
150
120
0.02
T
J
= 125
°C
0.01
T
J
= 25
°C
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Power (W)
0.03
90
60
30
0
0.001
0.01
0.1
Time (s)
1
10
On-Resistance vs. Gate-to-Source Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
100 μs
10
I
D
- Drain Current (A)
I
D
Limited
1 ms
10 ms
1
Limited by R
DS(on)
*
100 ms
1
s
10
s
DC
T
A
= 25 °C
Single
Pulse
0.01
0.01
BVDSS Limited
0.1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-2185-Rev. A, 14-Sep-15
Document Number: 74712
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS626DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
65
Vishay Siliconix
52
I
D
- Drain Current (A)
39
26
Package Limited
13
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
65
2.0
52
1.6
Power (W)
Power (W)
39
1.2
26
0.8
13
0.4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-2185-Rev. A, 14-Sep-15
Document Number: 74712
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SMT贴片机是表面贴装技术（Surface Mount Technology）中的重要设备，它的性能状态对电子制造的质量和效率有着决定性的影响。因此，对SMT贴片机的主要指标性能进行定期检测非常重要。以下是一些主要的检测项目： 定位精度：定位精度是SMT贴片机的核心性能指标，它直接影响到贴片的准确性。通常，我们通过重复测量贴片机在X、Y轴上的移动误差来检测其定位精度。 贴片速度：贴片速度...[详细]
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
