®
BUV28
NPN SWITCHING TRANSISTOR
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
VERY LOW SATURATION VOLTAGE
FAST TURN-OFF AND TURN-ON
APPLICATIONS:
s
SWITCHING REGULATORS
s
SOLENOID / RELAY DRIVERS
DESCRIPTION
High speed transistor suited for low voltage
applications.
High frequency and efficiency converters
switching regulators motor control.
bs
O
I
C
I
CM
I
B
I
BM
P
tot
P
tot
T
stg
T
j
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Parameter
Collector-base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5ms)
Base Current
Base Peak Current (t
p
< 5ms)
Total Dissipation at T
c
< 25 C
Total Dissipation at T
c
< 60 C
Storage Temperature
Max. Operating Junction Temperature
o
o
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
3
1
2
s)
t(
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value
400
200
7
10
15
2
4
85
65
-65 to +175
175
Unit
V
V
V
A
A
A
A
W
W
o
o
C
C
March 2003
1/4
BUV28
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.76
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CEX
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 50Ω)
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off
Current (I
C
= 0)
Test Conditions
V
CE
= 400V
V
CE
= 400V
V
EB
= 5 V
I
C
= 0.2 A
200
T
c
= 125 C
T
c
= 125
o
C
o
Min.
Typ.
Max.
3
1
1
Unit
mA
mA
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat)
∗
V
BE(sat)
∗
Emitter-Base
Voltage (I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
RESISTIVE LOAD
Storage Time
Fall Time
Turn-on Time
INDUCTIVE LOAD
Storage Time
Fall Time
I
E
= 50 mA
I
C
= 3 A
I
C
= 6 A
I
C
= 6 A
I
B
= 0.3 A
I
B
= 0.6 A
I
B
= 0.6 A
t
on
t
s
t
f
t
s
t
f
V
CC
= 150 V
V
BE
= - 6 V
R
BB
= 5
Ω
V
CC
= 150 V
I
B1
= 0.6 A
L
B
= 3
µH
∗
Pulsed: Pulse duration = 300µs, duty cycle = 2 %
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
I
C
= 6 A
I
B1
= 0.6 A
I
B2
= - 1.2 A
so
b
te
le
ro
P
7
uc
d
2
s)
t(
V
V
V
V
V
mA
30
0.7
1.5
1
1.5
0.25
3
0.2
µs
µs
µs
µs
µs
I
C
= 6 A
V
BE
= - 5 V
T
c
= 125
o
C
2/4
BUV28
TO-220 MECHANICAL DATA
DIM.
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
DIA.
3.75
13.00
2.65
15.25
6.20
3.50
2.60
mm
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10.00
16.40
14.00
2.95
15.75
6.60
3.93
TYP.
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
0.511
0.600
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
3.85
s
b
te
le
o
0.104
0.244
0.137
0.147
r
P
0.645
d
o
uc
s)
t(
0.067
0.067
0.202
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.102
0.151
P011CI
3/4
BUV28
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
4/4
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
