SUD30N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
FEATURES
I
D
(A)
30
a
30
a
r
DS(on)
(W)
0.010 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
100% R
g
Tested
D
TO-252
G
Drain Connected to Tab
G
D
S
S
N-Channel MOSFET
Top View
Order Number:
SUD30N04-10
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
"20
30
a
30
a
120
50
125
97
c
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount
d
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. Surface mounted on 1” FR4 board.
Document Number: 70782
S-31724—Rev. D, 18-Aug-03
www.vishay.com
Free Air
R
thJA
R
thJC
Symbol
Typical
45
110
1.5
Maximum
55
125
1.8
Unit
_C/W
C/W
1
SUD30N04-10
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 10 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
30
0.085
0.014
0.0185
0.0115
0.0195
0.025
57
0.010
0.017
0.022
0.014
0.024
0.031
S
W
40
1
3
"100
1
50
150
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.5
W
I
D
]
30 A, V
GEN
= 10 V, R
G
= 2.5
W
1
14
13
45
25
V
DS
= 15 V, V
GS
= 10 V, I
D
= 30 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2700
600
160
50
9
11
3.6
30
30
90
50
ns
W
100
nC
pF
Source-Drain Ciode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
I
s
I
SM
V
SD
t
rr
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, di/dt = 100 A/ms
0.90
50
30
120
1.50
100
A
V
ns
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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2
Document Number: 70782
S-31724—Rev. D, 18-Aug-03
SUD30N04-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120
V
GS
= 10, 9, 8, 7, 6 V
5V
I
D
- Drain Current (A)
120
Transfer Characteristics
90
I
D
- Drain Current (A)
90
60
4V
30
3V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
60
30
T
C
= 125_C
25_C
- 55_C
3
4
5
6
0
0
1
2
V
GS
- Gate-to-Source Voltage (V)
Transconductance
100
T
C
= - 55
_
C
r
DS(on)
- On-Resistance (
Ω
)
80
g
fs
- Transconductance (S)
25
_
C
125
_
C
60
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
30
60
90
120
0
On-Resistance vs. Drain Current
V
GS
= 4.5 V
V
GS
= 10 V
40
20
0
V
GS
- Gate-to-Source Voltage (V)
4000
20
40
60
80
100
I
D
- Drain Current (A)
10
V
GS
= 15 V
I
D
= 30 A
Capacitance
Gate Charge
3200
C - Capacitance (pF)
C
iss
V
GS
- Gate-to-Source Voltage (V)
8
2400
6
1600
C
oss
C
rss
4
800
2
0
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
Document Number: 70782
S-31724—Rev. D, 18-Aug-03
www.vishay.com
3
SUD30N04-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.5
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 30 A
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
r
DS(on)
- On-Resistance (
Ω
)
(Normalized)
2.0
T
J
= 150
_
C
T
J
= 25
_
C
10
1.5
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
40
Safe Operating Area
200
100
Limited
by r
DS(on)
10
ms
100
ms
I
D
- Drain Current (A)
10
30
I
D
- Drain Current (A)
20
1 ms
10 ms
100 ms
dc
T
C
= 25_C
Single Pulse
10
1
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature (_C)
0.1
0.1
1
10
50
V
DS
- Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
0.05
0.02
Single Pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
3
Square Wave Pulse Duration (sec)
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Document Number: 70782
S-31724—Rev. D, 18-Aug-03
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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