TRA2525 MR3025
Medium-Current Silicon
Rectifiers
250 Volts, 25 Amperes
Compact, highly efficient silicon rectifiers for medium–current
applications requiring:
•
High Current Surge — 400 Amperes @ T
J
= 175°C
•
Peak Performance @ Elevated Temperature — 25 Amperes
•
Low Cost
•
Compact, Molded Package for Optimum Efficiency in a Small Case
Configuration
Mechanical Characteristics
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MICRODE BUTTON
CASE 193
•
Finish: All External Surfaces are Corrosion Resistant, and Contact
•
•
•
•
Areas are Readily Solderable
Polarity: Indicated by Cathode Band
Weight: 1.8 Grams (Approximately)
Maximum Temperature for Soldering Purposes: 260°C
Marking: 2525 or MR3025
MARKING DIAGRAM
2525 LYYWW
MAXIMUM RATINGS
Rating
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
(Halfwave, Single Phase, 60 Hz)
Average Forward Current
(Single Phase, Resistive Load,
T
C
= 150°C)
Non–Repetitive Peak Surge Current
(Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
R
V
RSM
I
O
Value
250
310
25
Unit
Volts
Volts
Amps
2525
L
YY
WW
= Device Code
= Location Code
= Year
= Work Week
MARKING DIAGRAM
MR3025 YYWWL
I
FSM
T
J
T
stg
400
–65 to
+175
–65 to
+175
Amps
°C
°C
MR3025 = Device Code
L
= Location Code
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device
TRA2525
MR3025
Package
Microde Button
Microde Button
Shipping
5000 Units/Box
5000 Units/Box
©
Semiconductor Components Industries, LLC, 2000
1
October, 2000 – Rev. 1
Publication Order Number:
TRA2525/D
TRA2525 MR3025
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
1.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1.)
(I
F
= 100 Amps, T
C
= 25°C)
Reverse Current
(1)
(V
R
= 250 V, T
C
= 25°C)
(V
R
= 250 V, T
C
= 100°C)
Forward Voltage Temperature Coefficient @ I
F
= 10 mA
1. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2%.
*Typical
Symbol
V
F
I
R
—
—
V
FTC
*2*
10
250
*2*
mV/°C
Min
—
Max
1.18
Unit
Volts
µA
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2
TRA2525 MR3025
IFSM, PEAK HALF WAVE CURRENT (A)
1400
1350
1300
1250
V F, INSTANTANEOUS FORWARD VOLTAGE (mV)
1200
1150
1100
1050
1000
950
Maximum
P
W
= 300
ms
T
J
= 25°C
1000
T
J
= 25°C
V
RRM
may be applied between
each cycle of surge. The T
J
noted is T
J
prior to surge
F = 60 Hz
1 Cycle
T
J
= 175°C
100
1
10
NUMBER OF CYCLES
100
Figure 2. Non–Repetitive Surge Current
0
900
850
800
750
700
650
600
1
10
100
200
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
–2.0
0.1
1
10
100 200
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
COEFFICIENT (mV/
°
C)
Typical
–0.5
Typical Range
–1.0
–1.5
Figure 1. Forward Voltage
60
50
DC
40
30
20
10
0
120
130
140
150
160
170
180
T
C
, CASE TEMPERATURE (°C)
I
FM
/I
FAV
=
p
PF(AV), AVERAGE POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
50
Figure 3. V
F
Temperature Coefficient
40
I
FM
/I
FAV
=
p
DC
30
20
10
0
0
10
20
30
40
50
I
F
, AVERAGE FORWARD CURRENT (A)
Figure 4. Current Derating
Figure 5. Forward Power Dissipation
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3
TRA2525 MR3025
r(t), TRANSIENT THERMAL RESISTANCE
10
0
R
qJC(t)
= R
qJC
•
r(t)
Note 1
10
–1
10
–2
0.1
1
t, TIME (ms)
10
100
300
Figure 6. Thermal Response
NOTE 1
P
pk
t
p
t
1
C, CAPACITANCE (pF)
To determine maximum junction temperature of the diode in a given
situation, the following procedure is recommended.
The temperature of the case should be measured using a thermocou-
ple placed on the case at the temperature reference point (see the
outline drawing on page 1). The thermal mass connected to the case
is normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulse operation once
steady state conditions are achieved.
Using the measured value of T
C
, the junction temperature may be
determined by:
T
J
= T
C
+
DT
JC
Where
DT
JC
is the increase in junction temperature above the case
temperature, it may be determined by:
DT
JC
= P
pk
@
R
qJC
[D + (1 – D)
@
r(t
1
+ t
p
) + r(t
p
) – r(t
1
)]
where:
r(t) = normalized value of transient thermal resistance at
time, t, from Figure 6, i.e.:
r(t
1
+ t
p
) = normalized value of transient thermal resistance
at time t
1
+ t
p
.
P
pk
DUTY CYCLE, D = t
p
/t
1
PEAK POWER, P
pk
is peak of an
equivalent square power pulse
1000
T
J
= 25°C
100
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance
TFR , FORWARD RECOVERY TIME (
m
s)
V
F
T
J
= 25°C
TRR , REVERSE RECOVERY TIME (
m
s)
1
100
I
F
0
I
R
I
F
= 1 A
10
I
F
= 10 A
T
RR
T
J
= 25°C
0.25 I
R
T
FR
V
FR
V
FR
= 1.0 V
V
FR
= 2.0 V
0.1
1
I
F
, FORWARD CURRENT (A)
10
1
0.1
1
10
I
R
/I
F
, RATIO OF REVERSE TO FORWARD CURRENT
Figure 8. Forward Recovery Time
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4
Figure 9. Reverse Recovery Time
TRA2525 MR3025
∂
, EFFICIENCY FACTOR (%)
50
sine wave input
square wave input
T
J
= 25°C
10
5
1
10
f, FREQUENCY (kHz)
100
Figure 10. Rectification Waveform Efficiency
RECTIFICATION EFFICIENCY NOTE
RS
RL
V
O
Figure 11. Single Phase Half–Wave Rectifier Circuit
The rectification efficiency factor
∂
shown in Figure 10
was calculated using the formula:
V
2
o
(dc)
R
L
R
L
(1)
V
2
o
(dc)
.100%
2
o
(
ac)
)
V
2
o
(dc)
V
For a square wave input of amplitude Vm, the efficiency
factor becomes:
V
2m
2
R
L
.
(square)
+
V
2m
100%
+
50%
R
L
+
P
(dc)
P
(rms)
+
V
2
o
(rms)
.100%
+
(3)
For a sine wave input Vm sin(wt) to the diode, assume
lossless, the maximum theoretical efficiency factor
becomes:
V
2m
p
2
R
L
4 .
.
(sine)
+
V
2m
100%
+
π
2
100%
+
40.6%
4R
L
(2)
(a full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the
reverse recovery time of the diode (Figure 9) becomes
significant, resulting in an increase ac voltage component
across RL which is opposite in polarity to the forward
current, thereby reducing the value of the efficiency factor
∂,
as shown on Figure 10.
It should be emphasized that Figure 10 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the ac component of
V
O
with a true rms ac voltmeter and the dc component with
a dc voltmeter. The data was used in Equation 1 to obtain
points for Figure 10.
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