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CMLM8205-TR

产品描述MOSFET P-CHANNEL MOSFET SCHOTTKY DIODE
产品类别半导体    分立半导体   
文件大小500KB,共3页
制造商Central Semiconductor
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CMLM8205-TR概述

MOSFET P-CHANNEL MOSFET SCHOTTKY DIODE

CMLM8205-TR规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Central Semiconductor
产品种类
Product Category
MOSFET
RoHSDetails
技术
Technology
Si
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-563-6
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
ConfigurationSingle Dual Anode
Pd-功率耗散
Pd - Power Dissipation
350 mW
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
产品
Product
Schottky Diodes
NumOfPackaging3
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.000106 oz

文档预览

下载PDF文档
CMLM8205
Multi Discrete Module
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM8205 is a
Multi Discrete Module™ consisting of a single
P-Channel enhancement-mode MOSFET and a
low VF Schottky diode packaged in a space saving
SOT-563 surface mount case. This device is designed
for small signal general purpose applications where
size and operational efficiency are prime requirements.
MARKING CODE: C85
FEATURES:
• Low rDS(on) Transistor (3.0Ω MAX @ VGS=5.0V)
• Low VF Shottky Diode (0.47V MAX @ 0.5A)
SYMBOL
PD
PD
PD
TJ, Tstg
Θ
JA
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
SYMBOL
VRRM
IF
IFRM
IFSM
350
300
150
-65 to +150
357
50
50
20
280
280
1.5
1.5
40
500
3.5
10
UNITS
mW
mW
mW
°C
°C/W
UNITS
V
V
V
mA
mA
A
A
UNITS
V
mA
A
A
UNITS
nA
μA
μA
mA
V
V
SOT-563 CASE
APPLICATIONS:
• DC-DC Converters
• Battery Powered Portable Equipment
MAXIMUM RATINGS - CASE:
(TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
MAXIMUM RATINGS - D1:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp= 8.0ms
ELECTRICAL CHARACTERISTICS - Q1:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR
VGS=20V, VDS=0
100
IDSS
VDS=50V, VGS=0
1.0
IDSS
VDS=50V, VGS=0, TJ=125°C
500
ID(ON)
VGS=10V, VDS=10V
500
BVDSS
VGS(th)
VGS=0, ID=10μA
VDS=VGS, ID=250μA
50
1.0
2.5
Notes: 1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
R4 (8-January 2018)

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