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MA4P303-134

产品描述PIN Diodes 20-18000MHz .15pF Max Vr 200Vdc
产品类别分立半导体    二极管   
文件大小920KB,共8页
制造商MACOM
官网地址http://www.macom.com
标准
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MA4P303-134概述

PIN Diodes 20-18000MHz .15pF Max Vr 200Vdc

MA4P303-134规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明S-CUUC-N1
针数1
Reach Compliance Codecompliant
其他特性LOW DISTORTION
应用SWITCHING
最小击穿电压200 V
外壳连接ISOLATED
配置SINGLE
最大二极管电容0.15 pF
标称二极管电容0.15 pF
二极管元件材料SILICON
最大二极管正向电阻1.5 Ω
二极管电阻测试电流10 mA
二极管类型PIN DIODE
频带ULTRA HIGH FREQUENCY
JESD-30 代码S-CUUC-N1
少数载流子标称寿命0.3 µs
元件数量1
端子数量1
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状SQUARE
封装形式UNCASED CHIP
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散5 W
认证状态Not Qualified
反向测试电压10 V
表面贴装YES
技术POSITIVE-INTRINSIC-NEGATIVE
端子形式NO LEAD
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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Silicon PIN Chips
Rev. V22
Features
Switch & Attenuator Die
Extensive Selection of I-Region Lengths
Hermetic
Glass Passivated Cermachip
Oxide Passivated Planar Chips
Voltage Ratings to 3000 V
Fast Switching Speed
Low Loss
High Isolation
RoHS* Compliant
Anode
Description
MACOM offers a comprehensive line of low
capacitance, planar and mesa, silicon PIN diode
chips which use ceramic glass and silicon nitride
passivation technology. The silicon PIN chip series
of devices cover a broad spectrum of performance
requirements for control circuit applications. They
are available in several choices of I-region lengths
and have been optimally designed to minimize
parametric trade offs when considering low
capacitance, low series resistance, and high
breakdown voltages. Their small size and low
parasitics, make them an ideal choice for
broadband, high frequency, micro-strip hybrid
assemblies.
The attenuator line of PIN diode chips are a planar
or mesa construction and because of their thicker
I-regions and predictable R
S
vs. I characteristics,
they are well suited for low distortion attenuator
and switch circuits. Incorporated in the chip’s
construction is MACOM’s, time proven, hard glass,
Cermachip process. The hard glass passivation
completely encapsulates the entire PIN junction area
resulting in a hermetically sealed chip which has
been qualified in many military applications. These
Cermachip diodes are available in a wide range of
voltages, up to 3,000 volts, which are capable of
controlling kilowatts of RF power.
Many of MACOM ’s silicon PIN diode chips are also available
in several different package styles. Please refer to the
“Packaged PIN Diode Datasheet” for case style availability
and electrical specifications located on the MACOM website.
Also for high voltage, high power devices refer to
MA4PK2000.
Full Area Cathode
Absolute Maximum Ratings
1
T
A
= +25°C (
Unless otherwise specified
)
Parameter
Forward Current (I
F
)
Reverse Voltage (V
R
)
Power Dissipation (W)
Operating Temperature
Storage Temperature
Junction Temperature
Mounting Temperature
Absolute Maximum
Per P/N R
s
vs. I Graph
Per Specification Table
175°C – T
ambient
°C
Theta
-55°C to +175°C
-55°C to +200°C
+175°C
+320°C for 10 seconds
1. Exceeding these limits may cause permanent damage to the
chip
1
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

 
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