VS-GA400TD60S
www.vishay.com
Vishay Semiconductors
Dual INT-A-PAK Low Profile “Half Bridge”
(Standard Speed IGBT), 400 A
FEATURES
• Gen 4 IGBT technology
• Standard: optimized for hard switching speed
• Low V
CE(on)
• Square RBSOA
• HEXFRED
®
antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al
2
O
3
DBC
Dual INT-A-PAK Low Profile
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
CES
I
C
DC at T
C
= 25 °C
V
CE(on)
(typical) at 400 A, 25 °C
Speed
Package
Circuit configuration
600 V
750 A
1.24 V
DC to 1 kHz
Dual INT-A-PAK low profile
Half bridge
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation (IGBT)
RMS isolation voltage
SYMBOL
V
CES
I
C (1)
I
CM
I
LM
I
F
V
GE
P
D
V
ISOL
T
C
= 25 °C
T
C
= 80 °C
Any terminal to case
(V
RMS
t = 1 s, T
J
= 25 °C)
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
750
525
1000
1000
219
145
± 20
1563
875
3500
V
W
V
A
UNITS
V
Note
(1)
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
Revision: 11-Dec-17
Document Number: 93363
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA400TD60S
www.vishay.com
Vishay Semiconductors
SYMBOL
V
BR(CES)
TEST CONDITIONS
V
GE
= 0 V, I
C
= 500 μA
V
GE
= 15 V, I
C
= 300 A
V
GE
= 15 V, I
C
= 400 A
V
GE
= 15 V, I
C
= 300 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 400 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 250 μA
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
I
FM
= 300 A
I
FM
= 400 A
I
FM
= 300 A, T
J
= 125 °C
I
FM
= 400 A, T
J
= 125 °C
V
GE
= ± 20 V
MIN.
600
-
-
-
-
3.0
-
-
-
-
-
-
-
TYP.
-
1.14
1.24
1.08
1.21
4.6
0.075
1.8
1.48
1.63
1.50
1.70
-
MAX.
-
1.35
1.52
1.29
1.5
6.3
1
10
1.75
1.98
1.77
2.04
± 200
nA
V
mA
V
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
V
CE(on)
Gate threshold voltage
Collector to emitter leakage current
V
GE(th)
I
CES
Diode forward voltage drop
V
FM
Gate to emitter leakage current
I
GES
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
SYMBOL
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
RBSOA
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
T
J
= 150 °C, I
C
= 1000 A, V
CC
= 400 V,
V
P
= 600 V, R
g
= 22
V
GE
= 15 V to 0 V,
L = 500 μH
-
I
F
= 300 A, dI
F
/dt = 500 A/μs,
V
CC
= 400 V, T
J
= 25 °C
-
-
-
I
F
= 300 A, dI
F
/dt = 500 A/μs,
V
CC
= 400 V, T
J
= 125 °C
-
-
I
C
= 400 A, V
CC
= 360 V, V
GE
= 15 V,
R
g
= 1.5
,
L = 500 μH, T
J
= 125 °C
TEST CONDITIONS
I
C
= 400 A, V
CC
= 360 V, V
GE
= 15 V,
R
g
= 1.5
,
L = 500 μH, T
J
= 25 °C
MIN.
-
-
-
-
-
-
-
-
-
-
TYP.
8.5
113
121.5
21
163
184
532
377
496
1303
Fullsquare
150
43
3.9
236
64
8.6
179
59
6.3
265
80
11.1
ns
A
μC
ns
A
μC
MAX.
-
-
-
-
-
-
-
-
-
-
ns
mJ
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction and storage temperature range
Junction to case per leg
Case to sink per module
Mounting torque
Weight
case to heatsink: M6 screw
case to terminal 1, 2, 3: M5 screw
IGBT
Diode
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
MIN.
-40
-
-
-
4
2
-
TYP.
-
-
-
0.05
-
-
270
MAX.
150
0.08
0.4
-
6
5
-
Nm
g
°C/W
UNITS
°C
Revision: 11-Dec-17
Document Number: 93363
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA400TD60S
www.vishay.com
800
700
600
500
1.7
1.6
1.5
1.4
1.3
600 A
Vishay Semiconductors
V
CE
(V)
400 A
I
C
(A)
400
300
200
100
0
0.25
T
J
= 125 °C
T
J
= 25 °C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100 A
300 A
0.50
0.75
1.00
1.25 1.50
1.75
2.00
93363_04
20
40
60
80
100
120
140
160
93363_01
V
CE
(V)
Fig. 1 - Typical Output Characteristics,
T
J
= 25 °C, V
GE
= 15 V
T
J
(°C)
Fig. 4 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature,
V
GE
= 15 V
800
V
CE
= 20 V
800
700
600
500
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
V
GE
= 9 V
700
600
500
I
C
(A)
I
C
(A)
400
300
200
100
0
0.25
400
300
200
100
0
T
J
= 125 °C
T
J
= 25 °C
0.50
0.75
1.00
1.25
1.50
1.75
2.00
93363_05
3
4
5
6
7
8
9
93363_02
V
CE
(V)
Fig. 2 - Typical Output Characteristics,
T
J
= 125 °C
V
GE
(V)
Fig. 5 - Typical IGBT Transfer Characteristics
Allowable Case Temperature (°C)
160
140
120
DC
80
60
40
20
0
0
100
200
300
400
500
600
700
800
5.0
T
J
= 25 °C
4.5
4.0
V
geth
(V)
100
3.5
3.0
T
J
= 125 °C
2.5
2.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
93363_03
I
C
- Continuous Collector Current (A)
Fig. 3 - Maximum DC IGBT Collector Current vs.
Case Temperature
93363_06
I
C
(mA)
Fig. 6 - Typical IGBT Gate Threshold Voltage
Revision: 11-Dec-17
Document Number: 93363
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA400TD60S
www.vishay.com
10 000
160
140
120
100
80
60
40
20
0
1
93363_07
Vishay Semiconductors
Allowable Case Temperature (°C)
1000
DC
I
C
(A)
100
10
1
10
100
1000
93363_10
0
40
80
120
160
200
240
V
CE
(V)
Fig. 7 - IGBT Reverse Bias SOA,
T
J
= 150 °C, V
GE
= 15 V, R
g
= 22
10
T
J
= 125 °C
1
I
F
- Continuous Forward Current (A)
Fig. 10 - Maximum DC Forward Current vs. Case Temperature
175
150
125
Energy (mJ)
I
CES
(mA)
100
E
off
75
50
25
0.1
T
J
= 25 °C
0.01
E
on
0
100
200
300
400
0.001
100
93363_08
0
200
300
400
500
600
93363_11
V
CES
(V)
I
C
(A)
Fig. 11 - Typical IGBT Energy Loss vs. I
C
,
T
J
= 125 °C, V
CC
= 360 V, R
g
= 1.5
,
V
GE
= 15 V, L = 500 μH
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
600
500
400
T
J
= 125 °C
10 000
Switching
Time (ns)
t
f
1000
t
d(off)
t
d(on)
t
r
100
I
F
(A)
300
200
100
T
J
= 25 °C
0
0
0.5
1.0
1.5
2.0
2.5
10
0
93363_12
100
200
300
400
93363_09
V
FM
(V)
Fig. 9 - Typical Diode Forward Characteristics
I
C
(A)
Fig. 12 - Typical IGBT Switching Time vs. I
C
,
T
J
= 125 °C, V
CC
= 360 V, R
g
= 1.5
,
V
GE
= 15 V, L = 500 μH
Revision: 11-Dec-17
Document Number: 93363
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA400TD60S
www.vishay.com
175
150
125
E
off
300
280
260
240
T
J
= 125 °C
Vishay Semiconductors
Energy (mJ)
t
rr
(ns)
100
75
50
25
0
0
5
10
15
20
25
220
200
180
160
T
J
= 25 °C
E
on
140
120
100
100 200 300 400 500 600 700 800 900 1000
93363_15
93363_13
R
g
(Ω)
Fig. 13 - Typical IGBT Energy Loss vs. R
g
,
T
J
= 125 °C, I
C
= 400 A, V
CC
= 360 V,
V
GE
= 15 V, L = 500 μH
dI
F
/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Time vs. dI
F
/dt,
V
CC
= 400 V, I
F
= 300 A
10 000
130
120
110
Switching
Time (ns)
100
90
t
f
1000
t
d(on)
t
r
t
d(off)
80
70
60
50
40
30
20
100
0
5
10
15
20
25
93363_16
I
rr
(A)
T
J
= 125 °C
T
J
= 25 °C
10
100 200 300 400 500 600 700 800 900 1000
93363_14
R
g
(Ω)
Fig. 14 - Typical IGBT Switching Time vs. R
g
,
T
J
= 125 °C, I
C
= 400 A, V
CC
= 360 V,
V
GE
= 15 V, L = 500 μH
22
20
18
16
dI
F
/dt (A/µs)
Fig. 16 - Typical Reverse Recovery Current vs. dI
F
/dt,
V
CC
= 400 V, I
F
= 300 A
Q
rr
(μC)
14
12
10
8
6
4
2
0
100 200 300 400 500 600 700 800 900 1000
T
J
= 25 °C
T
J
= 125 °C
93363_17
dI
F
/dt (A/μs)
Fig. 17 - Typical Reverse Recovery Charge vs. dI
F
/dt,
V
CC
= 400 V, I
F
= 300 A
Revision: 11-Dec-17
Document Number: 93363
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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