RN1406SLF: 产品描述Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 200mW 4.7k; 产品类别半导体分立半导体; 文件大小578KB，共9页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1406SLF概述

Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 200mW 4.7k

RN1406SLF规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Toshiba(东芝)
产品种类 Product Category	Bipolar Transistors - Pre-Biased
Transistor Polarity	NPN
Typical Input Resistor	4.7 kOhms
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SC-59
DC Collector/Base Gain hfe Min	80
Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA
Pd-功率耗散 Pd - Power Dissipation	200 mW
系列 Packaging	Cut Tape
系列 Packaging	MouseReel
系列 Packaging	Reel
NumOfPackaging	3
工厂包装数量 Factory Pack Quantity	3000
单位重量 Unit Weight	0.000282 oz

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RN1401½RN1406

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1401, RN1402, RN1403

RN1404, RN1405, RN1406

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2401 to RN2406

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1401

RN1402

RN1403

RN1404

RN1405

RN1406

R1 (kΩ

4.7

2.2

4.7

R2 (kΩ

4.7

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1401 to 1406

RN1401 to 1404

RN1405, 1406

Symbol

CBO

CEO

EBO

stg

Rating

100

200

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1983-06

2014-03-01

RN1406SLF相似产品对比

	RN1406SLF	RN1406T5LFT
描述	Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 200mW 4.7k	Bipolar Transistors - Pre-Biased NPN 50V 0.1A TRANSISTOR LOG
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	Toshiba(东芝)	Toshiba(东芝)
产品种类 Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
Transistor Polarity	NPN	NPN
Typical Input Resistor	4.7 kOhms	4.7 kOhms
安装风格 Mounting Style	SMD/SMT	SMD/SMT
Collector- Emitter Voltage VCEO Max	50 V	50 V
Continuous Collector Current	100 mA	100 mA
工厂包装数量 Factory Pack Quantity	3000	3000
系列 Packaging	Reel	Reel

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