Soft Switching Series
IHW40N60T
q
C
Low Loss DuoPack : IGBT in TrenchStop
®
-technology with anti-parallel diode
Features:
•
Very low V
CE(sat)
1.5 V (typ.)
•
Maximum Junction Temperature 175 °C
•
Short circuit withstand time – 5µs
•
TrenchStop
®
and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V
CE(sat)
•
Positive temperature coefficient in V
CE(sat)
•
Low EMI
•
Low Gate Charge
•
Qualified according to JEDEC
1
for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
•
Inductive Cooking
•
Soft Switching Applications
Type
IHW40N60T
V
CE
600V
I
C
40A
V
CE(sat),Tj=25°C
1.55V
T
j,max
175°C
Marking
H40T60
Package
PG-TO-247-3
G
E
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (V
CE
≤
600V,
T
j
≤
175°C)
Diode forward current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Transient Gate-emitter voltage (t
p
< 5 ms)
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
P
tot
T
j
T
stg
-
303
-40...+175
-55...+175
260
W
°C
t
SC
I
Fpuls
V
GE
I
Cpuls
-
I
F
40
20
60
±20
±25
5
µs
V
Symbol
V
CE
I
C
80
40
120
120
Value
600
Unit
V
A
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 Sep. 08
Power Semiconductors
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
=0 V,
I
C
=0.5mA
V
CE(sat)
V
G E
= 15 V,
I
C
=40A
T
j
= 25°C
T
j
= 175
°C
Diode forward voltage
V
F
V
G E
=0 V,
I
F
= 2 0 A
T
j
= 25°C
T
j
= 175
°C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
=0.8mA,
V
C E
=V
G E
V
C E
= 60 0 V
,
V
G E
=0 V
T
j
= 25°C
T
j
= 175
°C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
=25V,
V
G E
=0 V,
f=1MHz
V
C C
= 48 0 V,
I
C
=40A
V
G E
=15V
-
-
-
-
-
I
GES
g
fs
R
Gint
V
C E
=0 V,V
G E
=20V
V
C E
=20V,
I
C
=40A
-
-
-
-
-
-
4.1
-
-
600
Symbol
Conditions
R
thJA
R
thJCD
R
thJC
Symbol
Conditions
IHW40N60T
q
Max. Value
0.49
0.76
40
Unit
K/W
Value
min.
Typ.
-
1.55
1.9
1.1
1.05
4.9
max.
-
2.05
-
-
-
5.7
Unit
V
µA
-
-
-
22
-
40
1000
100
-
nA
S
Ω
2423
113
72
215
13
-
-
-
-
-
pF
nC
nH
Power Semiconductors
2
Rev. 2.3 Sep. 08
Soft Switching Series
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25°C ,
V
C C
= 40 0 V,
I
C
=40A,
V
G E
= 0 /1 5 V,
R
G
=5.6
Ω
,
L
σ
1 )
=4 0nH ,
C
σ
1 )
=30pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
Symbol
Conditions
IHW40N60T
q
Value
min.
Typ.
-
-
186
66.3
-
0.92
0.92
max.
-
-
-
-
-
-
-
mJ
Unit
ns
Switching Characteristic, Inductive Load,
at
T
j
=175
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 175
°C
,
V
C C
= 40 0 V,
I
C
=40A,
V
G E
= 0 /1 5 V,
R
G
= 5.6
Ω
L
σ
1 )
=4 0nH ,
C
σ
1 )
=30pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
-
-
196
76.5
-
1.4
1.4
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
Typ.
max.
Unit
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.3 Sep. 08
Power Semiconductors
Soft Switching Series
IHW40N60T
q
140A
100A
120A
t
p
=1µs
I
C
,
COLLECTOR CURRENT
100A
80A
60A
40A
20A
0A
10Hz
T
C
=80°C
T
C
=110°C
I
C
,
COLLECTOR CURRENT
2µs
10A
10µs
50µs
I
c
1A
DC
1ms
10ms
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency for triangular
current (E
on
= 0, hard turn-off)
(T
j
≤
175°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 5.6Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤175°C;
V
GE
=15V)
350W
300W
60A
250W
200W
150W
100W
50W
0W
25°C
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
150°C
POWER DISSIPATION
40A
P
tot
,
20A
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
175°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≥
15V,
T
j
≤
175°C)
Power Semiconductors
4
Rev. 2.3 Sep. 08
Soft Switching Series
IHW40N60T
q
100A
V
GE
=20V
100A
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
80A
15V
13V
11V
9V
7V
V
GE
=20V
80A
15V
13V
60A
11V
9V
40A
7V
60A
40A
20A
20A
0A
0V
1V
2V
3V
0A
0V
1V
2V
3V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
V
CE(sat),
COLLECTOR
-
EMITTER SATURATION VOLTAGE
100A
2.5V
I
C
=80A
I
C
,
COLLECTOR CURRENT
80A
2.0V
I
C
=40A
60A
1.5V
40A
T
J
=175°C
20A
25°C
1.0V
I
C
=20A
0.5V
0A
0V
2V
4V
6V
8V
10V
0.0V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2.3 Sep. 08
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