SiHP17N60D
www.vishay.com
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
max. at 25 °C ()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
90
14
22
Single
D
FEATURES
650
0.340
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (C
iss
)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R
on
x Q
g
- Fast Switching
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TO-220AB
G
G
D
S
S
N-Channel MOSFET
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
• SMPS
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-220AB
SiHP17N60D-E3
SiHP17N60D-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode
dV/dt
d
for 10 s
Soldering Recommendations (Peak Temperature)
c
T
J
= 125 °C
E
AS
P
D
T
J
, T
stg
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
17
10.7
48
2.22
165.6
277.8
- 55 to + 150
24
0.2
300
W/°C
mJ
W
°C
V/ns
°C
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.3 mH, R
g
= 25
,
I
AS
= 12 A.
c. 1.6 mm from case.
d. I
SD
I
D
, starting T
J
= 25 °C.
S12-0813-Rev. B, 30-Apr-12
Document Number: 91464
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP17N60D
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
62
0.45
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 8 A
V
DS
= 50 V, I
D
= 8 A
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
V
GS
= 10 V
I
D
= 8 A, V
DS
= 480 V
MIN.
600
-
3
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.7
-
-
-
-
0.275
6.2
1780
140
15
45
14
22
22
56
37
30
1.6
MAX.
-
-
5
± 100
1
100
0.340
-
-
-
-
90
-
-
45
85
75
60
-
UNIT
V
V/°C
V
nA
μA
S
pF
nC
V
DD
= 300 V, I
D
= 8 A
R
g
= 9.1
,
V
GS
= 10 V
f = 1 MHz, open drain
-
-
-
-
ns
-
-
-
-
-
-
-
-
-
633
7
21
17
A
48
1.5
950
15
42
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 8 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
,
dI/dt = 100 A/μs, V
R
= 20 V
Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
S12-0813-Rev. B, 30-Apr-12
Document Number: 91464
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP17N60D
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
15V
14V
13V
12V
11V
10V
9.0V
8.0V
7.0V
6.0V
BOTYTOM 5.0
TOP
T
J
= 25
Vishay Siliconix
3.0
I
D
= 10 A
V
GS
= 10 V
2.0
40
I
D
- Drain Current (A)
2.5
R
DS(on)
- On-Resistance
(Normalized)
7V
30
1.5
20
1.0
10
0.5
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
0.0
- 60 - 40 - 20
0
20
40
60
80 100 120 140 160
T
J
- Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, T
C
= 150 °C
30
TOP
15V
14V
13V
12V
11V
10V
9.0V
8.0V
7.0V
6.0V
BOTYTOM 5.0V
Fig. 4 - Normalized On-Resistance vs. Temperature
10000
24
I
D
- Drain Current (A)
T
J
= 150
C - Capacitance (pF)
C
iss
1000
18
7V
C
oss
C
rss
100
12
6
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
10
0
200
400
V
DS
- Drain-to-Source Voltage (V)
600
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
60
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
18
I
D
= 12 A
V
DS
=120 V
V
DS
= 300 V
I
D
,Drain- to-Source Current (A)
V
GS
-
Gate-to-Source
Voltage (V)
50
16
14
40
V
DS
= 480 V
12
10
8
6
4
2
0
30
20
TJ = 150 °C
10
TJ = 25 °C
0
0
5
10
15
20
V
GS
,
Gate-to-Source
Voltage (V)
25
0.0
20.0
40.0
60.0
Q
g
- Total
Gate
Charge (nC)
80.0
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-0813-Rev. B, 30-Apr-12
Document Number: 91464
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP17N60D
www.vishay.com
Vishay Siliconix
20.00
100
T
J
= 150
°C
I
S
-
Source
Current (A)
10
ID,Drain Current (A)
15.00
10.00
T
J
= 25
°C
1
5.00
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
1.4
1.6
0.00
25
50
75
100
125
150
T
J
- Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
I
DM
Limited
Fig. 9 - Maximum Drain Current vs. Case Temperature
725
700
675
650
625
600
575
OPERATION IN THIS AREA
Limited by R
DS(on)
10
Limited by R
DS(on)
100 μs
1 ms
1
10 ms
T
C
= 25 °C
T
J
= 150 °C
Single
Pulse
1
10
100
BVDSS Limited
V
DS
, Drain -to -Source Breakdown
Voltage (V)
ID - Drain Current (A)
0.1
550
1000
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
-60 -40 -20
0
20
40
60
80 100 120 140
160
T
J
,Temperature (°C)
Fig. 8 - Maximum Safe Operating Area
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single
Pulse
0.01
0.0001
0.001
0.01
Square
Wave Pulse Duration (s)
0.1
1
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S12-0813-Rev. B, 30-Apr-12
Document Number: 91464
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP17N60D
www.vishay.com
Vishay Siliconix
R
D
10 V
Q
G
V
DS
V
GS
R
G
D.U.T.
+
-
V
DD
Q
GS
Q
GD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
V
G
Charge
Fig. 12 - Switching Time Test Circuit
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
12 V
V
DS
90 %
0.2 µF
0.3 µF
+
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
GS
3 mA
D.U.T.
-
V
DS
Fig. 13 - Switching Time Waveforms
I
G
I
D
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
D.U.T
I
AS
+
-
V
DD
10 V
t
p
0.01
Ω
Fig. 14 - Unclamped Inductive Test Circuit
V
DS
t
p
V
DD
V
DS
I
AS
Fig. 15 - Unclamped Inductive Waveforms
S12-0813-Rev. B, 30-Apr-12
Document Number: 91464
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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