电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MBRF2535CT

产品描述Schottky Diodes & Rectifiers 30 Amp 35 Volt Dual
产品类别分立半导体    二极管   
文件大小209KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

MBRF2535CT在线购买

供应商 器件名称 价格 最低购买 库存  
MBRF2535CT - - 点击查看 点击购买

MBRF2535CT概述

Schottky Diodes & Rectifiers 30 Amp 35 Volt Dual

MBRF2535CT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明GREEN, PLASTIC, ITO-220AB, 3 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS, UL RECOGNIZED
应用EFFICIENCY
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
湿度敏感等级1
最大非重复峰值正向电流200 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流25 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
认证状态Not Qualified
最大重复峰值反向电压35 V
表面贴装NO
技术SCHOTTKY
端子面层Pure Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

下载PDF文档
MBRF2535CT - MBRF25150CT
Taiwan Semiconductor
CREAT BY ART
25A, 35V - 150V Dual Common Cathode Schottky Rectifiers
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
=12.5A, T
J
=25°C
I
F
=12.5A, T
J
=125°C
I
F
=25A, T
J
=25°C
I
F
=25A, T
J
=125°C
Maximum reverse current @ rated V
R
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
2535
CT
35
24
35
2545
CT
45
31
45
2550
CT
50
35
50
2560
CT
60
42
60
25
25
200
2590
CT
90
63
90
25100 25150 UNIT
CT
100
70
100
CT
150
105
150
V
V
V
A
A
A
-
V
F
-
0.82
0.73
I
R
dV/dt
R
θJC
R
θJA
T
J
T
STG
2
15
0.75
0.65
-
-
10
10000
1
8
- 55 to +150
- 55 to +150
0.85
0.75
0.92
0.88
0.1
7.5
0.95
0.92
1.02
0.98
5
mA
V/μs
°C/W
°C
°C
V
Document Number: DS_D1310013
Version: K15

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2335  948  1384  1921  2731  37  56  27  54  28 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved