Si7973DP
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
0.015 at V
GS
= - 4.5 V
- 12
0.019 at V
GS
= - 2.5 V
0.024 at V
GS
= - 1.8 V
I
D
(A)
- 12.8
- 11.4
- 10.1
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET: 1.8 V Rated
• New Low Thermal Resistance PowerPAK
®
Package
APPLICATIONS
• Load Switch
PowerPAK SO-8
6.15 mm
S1
1
2
5.15 mm
G1
S2
S
1
S
2
3
4
D1
G2
8
7
G
1
D1
D2
G
2
6
5
D2
Bottom View
Ordering Information:
Si7973DP-T1-E3 (Lead (Pb)-free)
Si7973DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Steady State
- 12
±8
- 12.8
- 8.2
- 9.2
- 5.9
- 30
- 2.9
- 1.2
3.5
1.4
1.9
0.8
- 55 to 150
260
10 s
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
26
60
2.2
Maximum
35
85
2.7
Unit
°C/W
Document Number: 72428
S09-0268-Rev. B, 16-Feb-09
www.vishay.com
1
Si7973DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
a
a
a
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Test Conditions
V
DS
= V
GS
, I
D
= - 600 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 12.8 A
V
GS
= - 2.5 V, I
D
= - 11.4 A
V
GS
= - 1.8 V, I
D
= - 4.2 A
V
DS
= - 6 V, I
D
= - 12.8 A
I
S
= - 2.9 A, V
GS
= 0 V
Min.
- 0.40
Typ.
Max.
- 1.0
± 100
-1
-5
Unit
V
nA
µA
A
- 30
0.012
0.015
0.019
35
- 0.8
55
- 1.2
80
0.015
0.019
0.024
Ω
S
V
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 12.8 A
f = 1 MHz
V
DD
= - 6 V, R
L
= 6
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
8.1
15.4
8
40
72
360
260
166
60
110
540
390
250
nC
Ω
ns
I
F
= - 2.9 A, dI/dt = 100 A/µs
Notes
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 5 V thru 2 V
25
I
D
- Drain Current (A)
25
30
I
D
- Drain Current (A)
20
20
15
1.5 V
10
15
10
T
C
= 125 °C
5
25 °C
- 55 °C
5
1V
0
0
1
2
3
4
5
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72428
S09-0268-Rev. B, 16-Feb-09
Si7973DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.06
6000
0.05
On-Resistance (Ω)
Capacitance (pF)
5000
C
iss
0.04
4000
0.03
V
GS
= 1.8 V
0.02
V
GS
= 2.5 V
3000
C
oss
-
-
C
R
DS(on)
2000
C
rss
0.01
V
GS
= 4.5 V
1000
0.00
0
5
10
I
D
15
20
25
30
0
0
2
V
DS
4
6
8
10
12
-
Drain Current (A)
-
Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 12.8 A
On-Resistance
(Normalized)
1.6
V
GS
= 4.5 V
I
D
= 12.8 A
Capacitance
4
1.4
3
1.2
2
1.0
V
GS
R
DS(on)
-
-
1
0.8
0
0
10
Q
g
20
30
40
50
60
0.6
-
50
-
25
0
25
50
75
100
125
150
-
Total Gate Charge (nC)
T
J
-
Junction Temperature (°C)
Gate Charge
0.06
30
0.05
Source Current (A)
T
J
= 150 °C
On-Resistance (Ω)
On-Resistance vs. Junction Temperature
10
0.04
I
D
= 13 A
0.03
0.02
-
I
S
T
J
= 25 °C
R
DS(on)
-
I
D
= 4.2 A
0.01
0.00
1
0.0
0.2
V
SD
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
-
Source-to-Drain Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72428
S09-0268-Rev. B, 16-Feb-09
www.vishay.com
3
Si7973DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
I
D
= 600 µA
40
50
0.3
V
GS(th)
Variance (V)
0.2
Power (W)
30
0.1
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)
*
I
DM
Limited
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
DC
10
I
D
- Drain Current (A)
1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
t
1
t
2
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
Square Wave Pulse Duration (s)
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72428
S09-0268-Rev. B, 16-Feb-09
Si7973DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
Single Pulse
0.05
0.01
10
-
4
10
-
3
10
-
2
Square Wave Pulse Duration (s)
10
-
1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72428.
Document Number: 72428
S09-0268-Rev. B, 16-Feb-09
www.vishay.com
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