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2SD1481

产品描述SILICON POWER TRANSISTOR
文件大小89KB,共4页
制造商NEC ( Renesas )
官网地址https://www2.renesas.cn/zh-cn/
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2SD1481概述

SILICON POWER TRANSISTOR

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DATA SHEET
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• On-chip C-to-B Zener diode for surge voltage absorption
• Low collector saturation voltage: V
CE(SAT)
= 1.5 V MAX. (at 1 A)
• Ideal for use in a direct drive from IC to the devices such as OA
and FA equipment and motor solenoid relay printer head drivers
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
60
±10
60
±10
7.0
2.0
4.0
0.2
15
1.5
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
*
PW
300
µ
s, duty cycle
10%
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 %DVH
 &ROOHFWRU
 (PLWWHU
 )LQ FROOHFWRU

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16189EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998

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