Freescale Semiconductor
Technical Data
Document Number: MHL19338N
Rev. 6, 8/2006
PCS Band
RF Linear LDMOS Amplifier
Designed for ultra- linear amplifier applications in
50 ohm system
s operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
•
Third Order Intercept: 46 dBm Typ
•
Power Gain: 30 dB Typ (@ f = 1960 MHz)
•
Input VSWR
v
1.5:1
Features
•
Excellent Phase Linearity and Group Delay Characteristics
•
Ideal for Feedforward Base Station Applications
•
N Suffix Indicates Lead - Free Terminations
MHL19338N
1900 - 2000 MHz
4.0 W, 30 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V
DD
P
in
T
stg
T
C
Value
30
+10
- 40 to +100
- 20 to +100
Unit
Vdc
dBm
°C
°C
Table 2. Electrical Characteristics
(V
DD
= 28 Vdc, T
C
= 25°C; 50
Ω
System)
Characteristic
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 1960 MHz)
(f = 1900 - 2000 MHz)
(f = 1950 MHz)
Symbol
I
DD
G
p
G
F
P1dB
ITO
NF
Min
—
29
—
35
45
—
Typ
500
30
0.1
36
46
4.2
Max
525
32
0.4
—
—
4.5
Unit
mA
dB
dB
dBm
dBm
dB
Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz)
Noise Figure
(f = 2000 MHz)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHL19338N
1
RF Device Data
Freescale Semiconductor
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©
Freescale Semiconductor, Inc. 2006. All rights reserved.
MHL19338N
Document Number:
RF Device Data
MHL19338N
Rev. 6, 8/2006
Freescale Semiconductor
3
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