is designed for single and multicarrier 1500MHz to
2500MHz DCS 1800/PCS 1900 EDGE, cdma2000
®
,
WCDMA/LTE/TD-LTE, and PHS/PAS base-station appli-
cations. Direct conversion architectures are advanta-
geous since they significantly reduce transmitter or
receiver cost, part count, and power consumption as
compared to traditional IF-based double-conversion
systems.
In addition to offering excellent linearity and noise perfor-
mance, the MAX2023 also yields a high level of compo-
nent integration. This device includes two matched
passive mixers for modulating or demodulating in-phase
and quadrature signals, two LO mixer amplifier drivers,
and an LO quadrature splitter. On-chip baluns are also
integrated to allow for single-ended RF and LO connec-
tions. As an added feature, the baseband inputs have
been matched to allow for direct interfacing to the trans-
mit DAC, thereby eliminating the need for costly I/Q
buffer amplifiers.
The MAX2023 operates from a single +5V supply. It is
available in a compact 36-pin TQFN package (6mm x
6mm) with an exposed pad. Electrical performance is
guaranteed over the extended -40°C to +85°C temper-
ature range.
Features
♦
1500MHz to 2500MHz RF Frequency Range
♦
Scalable Power: External Current-Setting
Resistors Provide Option for Operating Device in
Reduced-Power/Reduced-Performance Mode
♦
36-Pin, 6mm x 6mm TQFN Provides High Isolation
in a Small Package
Modulator Operation:
♦
Meets GSM Spurious Emission of -75dBc at
600kHz Offset at P
OUT
= +6dBm
♦
+23.5dBm Typical OIP3
♦
+61dBm Typical OIP2
♦
+16dBm Typical OP1dB
♦
-54dBm Typical LO Leakage
♦
48dBc Typical Sideband Suppression
♦
-165dBc/Hz Output Noise Density
♦
Broadband Baseband Input of 450MHz Allows a
Direct Launch DAC Interface, Eliminating the
Need for Costly I/Q Buffer Amplifiers
♦
DC-Coupled Input Allows Ability for Offset
Voltage Control
Demodulator Operation:
♦
+38dBm Typical IIP3
♦
+59dBm Typical IIP2
♦
+30dBm Typical IP1dB
♦
9.5dB Typical Conversion Loss
♦
9.6dB Typical NF
♦
0.025dB Typical I/Q Gain Imbalance
♦
0.56° I/Q Typical Phase Imbalance
MAX2023
Applications
Single-Carrier DCS 1800/PCS 1900 EDGE Base
Stations
Single and Multicarrier WCDMA/LTE/TD-LTE Base
Stations
Single and Multicarrier cdmaOne™ and cdma2000
Base Stations
Predistortion Transmitters and Receivers
PHS/PAS Base Stations
Fixed Broadband Wireless Access
Military Systems
Microwave Links
Digital and Spread-Spectrum Communication
Systems
Video-on-Demand (VOD) and DOCSIS Compliant
Edge QAM Modulation
Cable Modem Termination Systems (CMTS)
Ordering Information
PART
MAX2023ETX+
MAX2023ETX+T
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
36 TQFN-EP*
(6mm x 6mm)
36 TQFN-EP*
(6mm x 6mm)
+Denotes
a lead(Pb)-free/RoHS-compliant package.
*EP
= Exposed pad.
T = Tape and reel.
cdma2000 is a registered certification mark and registered service mark of the Telecommunications Industry Association.
cdmaOne is a trademark of CDMA Development Group.
For pricing, delivery, and ordering information, please contact Maxim Direct
at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
High-Dynamic-Range, Direct Up-/Downconversion
1500MHz to 2500MHz Quadrature Mod/Demod
MAX2023
ABSOLUTE MAXIMUM RATINGS
VCC_ to GND ........................................................-0.3V to +5.5V
BBI+, BBI-, BBQ+, BBQ- to GND..................-4V to (V
CC
+ 0.3V)
LO, RF to GND Maximum Current ......................................30mA
RF Input Power ...............................................................+30dBm
Baseband Differential I/Q Input Power ..........................+20dBm
LO Input Power...............................................................+10dBm
RBIASLO1 Maximum Current .............................................10mA
RBIASLO2 Maximum Current .............................................10mA
Note 1:
RBIASLO3 Maximum Current .............................................10mA
Continuous Power Dissipation (Note 1) ...............................7.6W
Operating Case Temperature Range (Note 2) ....-40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Note 2:
Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details.
The junction temperature must not exceed +150°C.
T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS
TQFN
Junction-to-Ambient
Thermal Resistance (θ
JA
) (Notes 3, 4) .......................+34°C/W
Note 3:
Note 4:
Junction-to-Case
Thermal Resistance (θ
JC
) (Notes 1, 4) ......................+8.5°C/W
Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
DC ELECTRICAL CHARACTERISTICS
(MAX2023
Typical Application Circuit,
V
CC
= 4.75V to 5.25V, GND = 0V, I/Q inputs terminated into 50Ω to GND, LO input terminated into
50Ω, RF output terminated into 50Ω, 0V common-mode input, R1 = 432Ω, R2 = 562Ω, R3 = 301Ω, T
C
= -40°C to +85°C, unless otherwise
noted. Typical values are at V
CC
= 5V, T
C
= +25°C, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
(Note 5)
CONDITIONS
MIN
4.75
255
TYP
5.00
295
MAX
5.25
345
UNITS
V
mA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency (Note 6)
LO Frequency (Note 6)
IF Frequency (Note 6)
LO Power Range
SYMBOL
f
RF
f
LO
f
IF
P
LO
-3
CONDITIONS
MIN
1500
1500
TYP
MAX
2500
2500
1000
+3
UNITS
MHz
MHz
MHz
dBm
2
High-Dynamic-Range, Direct Up-/Downconversion
1500MHz to 2500MHz Quadrature Mod/Demod
AC ELECTRICAL CHARACTERISTICS (Modulator)
(MAX2023
Typical Application Circuit,
when operated as a modulator, V
CC
= 4.75V to 5.25V, GND = 0V, I/Q differential inputs
driven from a 100Ω DC-coupled source, 0V common-mode input, 50Ω LO and RF system impedance, R1 = 432Ω, R2 = 562Ω,
R3 = 301Ω, T
C
= -40°C to +85°C. Typical values are at V
CC
= 5V, V
BBI
= V
BBQ
= 2.66V
P-P
differential, f
IQ
= 1MHz, f
LO
= 1850MHz,
P
LO
= 0dBm, T
C
= +25°C, unless otherwise noted.)
PARAMETER
BASEBAND INPUT
Baseband Input Differential
Impedance
BB Common-Mode Input Voltage
Range
Baseband 0.5dB Bandwidth
LO INPUT
LO Input Return Loss
RF OUTPUT
Output IP3
P
OUT
= 0dBm,
f
BB1
= 1.8MHz,
f
BB2
= 1.9MHz
f
LO
= 1750MHz
f
LO
= 1850MHz
f
LO
= 1950MHz
24.2
23.5
22
61
15.9
14.3
12.5
5.6
0.25
0.2
17
f
LO
= 1750MHz
f
LO
= 1850MHz
f
LO
= 1950MHz
200kHz offset
Spurious Emissions
P
OUT
= +6dBm, f
LO
= 1850MHz, EDGE
input
400kHz offset
600kHz offset
1.2MHz offset
Error Vector Magnitude
Output Noise Density
Output Noise Floor
LO Leakage
EDGE input
(Note 8)
P
OUT
= 0dBm (Note 9)
Unnulled, baseband
inputs terminated in
50
f
LO
= 1750MHz
f
LO
= 1850MHz
f
LO
= 1950MHz
RMS
Peak
51
48
48
-37.2
-71.4
-84.7
-85
0.67
1.5
-174
-165
-59
-54
-48
dBm
%
dBm/Hz
dBm/Hz
dBc/
30kHz
dBc
dBm
dB
dB
dB
dBm
dBm
dBm
15
dB
f
I/Q
= 1MHz
V
BBI
= V
BBQ
= 1V
P-P
differential
55
±3.5
450
V
MHz
CONDITIONS
MIN
TYP
MAX
UNITS
MAX2023
Output IP2
P
OUT
= 0dBm, f
BB1
= 1.8MHz, f
BB2
= 1.9MHz,
f
LO
= 1850MHz
f
LO
= 1750MHz
CW tone
(Note 7)
P
OUT
= +5.6dBm, f
I/Q
= 100kHz, T
C
= -40°C to
+85°C
f
LO
= 1850MHz, P
RF
flatness for f
LO
swept over
±50MHz
range
f
LO
= 1850MHz
No external
calibration
f
LO
= 1850MHz
f
LO
= 1950MHz
Output P
1dB
Output Power
Output Power Variation Over
Temperature
Output-Power Flatness
RF Return Loss
Single Sideband Rejection
3
High-Dynamic-Range, Direct Up-/Downconversion
1500MHz to 2500MHz Quadrature Mod/Demod
MAX2023
AC ELECTRICAL CHARACTERISTICS (Demodulator, LO = 1850MHz)
(MAX2023
Typical Application Circuit
when operated as a demodulator, V
CC
= 4.75V to 5.25V, GND = 0V, V
DC
for BBI+, BBI-, BBQ+,
BBQ- = 0V, 50Ω LO and RF system impedance, R1 = 432Ω, R2 = 562Ω, R3 = 301Ω, T
C
= -40°C to +85°C. Typical values are at
V
CC
= 5V, P
RF
= 0dBm, f
BB
= 1MHz, P
LO
= 0dBm, f
LO
= 1850MHz, T
C
= +25°C, unless otherwise noted.)
PARAMETER
RF INPUT
Conversion Loss
Noise Figure
Noise Figure Underblocking
Conditions
Input Third-Order Intercept
Point
Input Second-Order Intercept
Point
Input 1dB Compression Point
I/Q Gain Mismatch
I/Q Phase Mismatch
f
BLOCKER
= 1950MHz, P
BLOCKER
= +11dBm,
f
RF
= 1850MHz (Note 10)
f
RF1
= 1875MHz, f
RF2
= 1876MHz, f
LO
= 1850MHz,
P
RF
= P
LO
= 0dBm, f
IM3
= 24MHz
f
RF1
= 1875MHz, f
RF2
= 1876MHz, f
LO
= 1850MHz,
P
RF
= P
LO
= 0dBm, f
IM2
= 51MHz
f
BB
= 25MHz
f
BB
= 1MHz
f
BB
= 1MHz
f
BB
= 25MHz
9.5
9.6
20.3
38
59
29.7
0.025
0.56
dB
dB
dB
dBm
dBm
dBm
dB
Degrees
CONDITIONS
MIN
TYP
MAX
UNITS
AC ELECTRICAL CHARACTERISTICS (Demodulator, LO = 2350MHz)
(MAX2023
Typical Application Circuit
when operated as a demodulator. I/Q outputs are recombined using network shown in
Figure 5. Losses of combining network not included in measurements. RF and LO ports are driven from 50Ω sources. Typical values
are for T
C
= +25°C, V
CC
= 5V, I/Q DC returns = 160Ω resistors to GND, P
RF
= 0dBm, P
LO
= 0dBm, f
RF
= 2140MHz, f
LO
= 2350MHz,
f
IF
= 210MHz, unless otherwise noted.)
PARAMETER
Conversion Loss
Noise Figure
SYMBOL
L
C
NF
SSB
f
RF1
= 2135MHz,
f
RF2
= 2140MHz,
P
RF1
= P
RF2
= 0dBm,
f
IF1
= 215MHz,
f
IF2
= 210MHz
f
RF1
= 2135MHz,
f
RF2
= 2140MHz,
P
RF1
= P
RF2
= 0dBm,
f
IF1
= 215MHz,
f
IF2
= 210MHz,
f
IM2nd
= 425MHz
CONDITIONS
MIN
TYP
10.9
11
MAX
UNITS
dB
dB
Input Third-Order Intercept Point
IIP3
31.5
dBm
Input Second-Order Intercept
Point
IIP2
65
dBm
LO Leakage at RF Port
LO Leakage at I/Q Ports
Gain Compression
I/Q Gain Mismatch
I/Q Phase Mismatch
RF Port Return Loss
C9 = 2pF
P
RF
= 21dBm
-50
-38
0.17
0.025
0.6
13
dBm
dBm
dB
dB
Degrees
dB
4
High-Dynamic-Range, Direct Up-/Downconversion
1500MHz to 2500MHz Quadrature Mod/Demod
AC ELECTRICAL CHARACTERISTICS (Demodulator, LO = 2350MHz) (continued)
(MAX2023
Typical Application Circuit
when operated as a demodulator. I/Q outputs are recombined using network shown in
Figure 5. Losses of combining network not included in measurements. RF and LO ports are driven from 50Ω sources. Typical values
are for T
C
= +25°C, V
CC
= 5V, I/Q DC returns = 160Ω resistors to GND, P
RF
= 0dBm, P
LO
= 0dBm, f
RF
= 2140MHz, f
LO
= 2350MHz,
f
IF
= 210MHz, unless otherwise noted.)
PARAMETER
RF Port Impedance (R+jX)
(At RF Pin)
LO Port Return Loss
LO Port Impedance (R+jX)
(At LO Pin)
IF Port Differential Return Loss
IF Port Differential Impedance
(At IF Pins) (R+jX)
Minimum Demodulation 3dB
Bandwidth
Minimum 1dB Gain Flatness
IF = 210MHz,
LO = 2350MHz
Real
Imag
SYMBOL
CONDITIONS
RF = 2140MHz,
C9 = short
C3 = 3pF
LO = 2350MHz,
C3 = short
Real
Imag
Real
Imag
MIN
TYP
74.7
+j46.3
23
38.0
+j20.7
27
53.2
-j2.8
> 1000
> 800
MHz
MHz
dB
dB
MAX
UNITS
MAX2023
Guaranteed by production test.
Recommended functional range. Not production tested. Operation outside this range is possible, but with degraded
performance of some parameters.
Note 7:
V
I/Q
= 2.66V
P-P
differential CW input.
Note 8:
No baseband drive input. Measured with the baseband inputs terminated in 50Ω. At low output power levels, the output
noise density is equal to the thermal noise floor. See Output Noise Density vs. Output Power plots in
Typical Operating
Characteristics.
Note 9:
The output noise vs. P
OUT
curve has the slope of LO noise (Ln dBc/Hz) due to reciprocal mixing. Measured at 10MHz off-
set from carrier.
Note 10:
The LO noise (L = 10
(Ln/10)
), determined from the modulator measurements can be used to deduce the noise figure
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